A metal article comprises two metals, and a first hole and an oxide layer are set correspondingly on the surfaces of the two metals. To avoid the electrolytic corrosion on the interface between the two metals during the formation of the first hole, the disclosure provides a method of manufacturing the metal article. By putting a metal substrate in a first electrolyte including an etching agent and a passivating agent and applying electricity on the metal substrate, the metal article with the first hole is formed without electrolytic corrosion. The disclosure also provides a metal composite, which is formed by setting a material part in the first hole of the metal article.

A metal article comprises two metals, and a first hole and an oxide layer are set correspondingly on the surfaces of the two metals. To avoid the electrolytic corrosion on the interface between the two metals during the formation of the first hole, the disclosure provides a method of manufacturing the metal article. By putting a metal substrate in a first electrolyte including an etching agent and a passivating agent and applying electricity on the metal substrate, the metal article with the first hole is formed without electrolytic corrosion. The disclosure also provides a metal composite, which is formed by setting a material part in the first hole of the metal article.

Fabricating an electrode for capacitor includes performing a first set of one or more preliminary oxide formation operations on a sheet of material. The method also includes performing a capacitance test on the sheet of material so as to determine the capacitance of the sheet of material after the one or more preliminary oxide formation operations. The method proceeds on a first path in response to a first result of the capacitance test and on a second path in response to a second result of the capacitance test. The first path includes performing a second set of the one or more preliminary oxide formation operations on the sheet of material so as to reduce the capacitance of the sheet of material below the determined capacitance. The second path excludes performing any preliminary oxide formation operations on the sheet of material.

Fabricating an electrode for capacitor includes performing a first set of one or more preliminary oxide formation operations on a sheet of material. The method also includes performing a capacitance test on the sheet of material so as to determine the capacitance of the sheet of material after the one or more preliminary oxide formation operations. The method proceeds on a first path in response to a first result of the capacitance test and on a second path in response to a second result of the capacitance test. The first path includes performing a second set of the one or more preliminary oxide formation operations on the sheet of material so as to reduce the capacitance of the sheet of material below the determined capacitance. The second path excludes performing any preliminary oxide formation operations on the sheet of material.

Superabrasive elements may be produced by method includes providing a superabrasive element including a polycrystalline diamond table that includes a metallic material disposed in interstitial spaces defined within the polycrystalline diamond table. The polycrystalline diamond table includes a superabrasive face and a superabrasive side surface extending around an outer periphery of the superabrasive face. The method also includes leaching the metallic material from at least a volume of the polycrystalline diamond table to produce a leached volume in the polycrystalline diamond table by (1) exposing at least a portion of the polycrystalline diamond table to a processing solution, (2) exposing an electrode to the processing solution, and (3) applying a charge to the electrode.

A method of manufacturing a semiconductor wafer having a roughened metallization layer surface is described. The method includes immersing the semiconductor wafer in an electrolytic bath. Gas bubbles are generated in the electrolytic bath. A surface of a metallization layer on the semiconductor wafer is electrochemically roughened in the presence of the gas bubbles by applying a reversing voltage between the metallization layer and an electrode of the electrolytic bath.

The invention provides a process for preparing an electrode, comprising: electrodeposition of metallic ruthenium/ruthenium oxide (Ru.sup.(0)/RuO.sub.2) coating onto a progressively etched nickel surface; and partial electrochemical oxidation of said metallic ruthenium to ruthenium oxide. The electrode produced and a pseudo-capacitor based on the electrode are also disclosed.

A method of processing a superabrasive element includes providing a superabrasive element including a polycrystalline diamond table that includes a metallic material disposed in interstitial spaces defined within the polycrystalline diamond table. The polycrystalline diamond table includes a superabrasive face and a superabrasive side surface extending around an outer periphery of the superabrasive face. The method also includes leaching the metallic material from at least a volume of the polycrystalline diamond table to produce a leached volume in the polycrystalline diamond table by (1) exposing at least a portion of the polycrystalline diamond table to a processing solution, (2) exposing an electrode to the processing solution, and (3) applying a charge to the electrode such that a voltage is generated between the polycrystalline diamond table and the electrode and the voltage is applied to the processing solution. The method includes the use of an improved processing solution, including an organic acid and a divalent (e.g., Group II) metal salt, to increase the leaching depth.

A method of processing a superabrasive element includes providing a superabrasive element including a polycrystalline diamond table that includes a metallic material disposed in interstitial spaces defined within the polycrystalline diamond table. The polycrystalline diamond table includes a superabrasive face and a superabrasive side surface extending around an outer periphery of the superabrasive face. The method also includes leaching the metallic material from at least a volume of the polycrystalline diamond table to produce a leached volume in the polycrystalline diamond table by (1) exposing at least a portion of the polycrystalline diamond table to a processing solution, (2) exposing an electrode to the processing solution, and (3) applying a charge to the electrode such that a voltage is generated between the polycrystalline diamond table and the electrode and the voltage is applied to the processing solution. The method includes the use of an improved processing solution, including an organic acid and a divalent (e.g., Group II) metal salt, to increase the leaching depth.

Anode foil, preferably aluminum anode foil, is etched using a process of treating the foil in an electrolyte bath composition comprising a perfluoroalkylsulfonate, a sulfate, a halide, and an oxidizing agent. The anode foil is etched in the electrolyte bath composition by passing a direct current charge through the bath. The etched anode foil is suitable for use in an electrolytic capacitor.