A method of forming a 3D graphene material adhered to a surface of a substrate comprises: providing a carbon source on the surface of the substrate; and exposing at least a portion of the carbon source and/or at least a portion of the substrate to a laser beam, thereby converting at least a portion of the carbon source into a 3D graphene material adhered to the surface of the substrate.

The invention relates to a method for producing thin layers of silicon carbide by means of a solution or dispersion containing carbon and silicon.

A method is described for the atmospheric pressure sintering of silicon to form high density polycrystalline silicon preforms that optionally may be annealed at higher temperatures to form wafers suitable for use in solar cells. The preforms are formed from nanometer scale, high surface area silicon that is sintered to form the near full density polycrystalline silicon preforms. Subsequent annealing of the preforms may be used to grow grains suitable for use as wafers for solar cells. The polycrystalline silicon may be used directly to form semiconductor structures other than wafers suitable for solar cells, such as to form electrodes, electrode surfaces, and thermoelectric devices.

A crystalline oxide semiconductor thin film that is composed mainly of indium oxide and comprises surface crystal grains having a single crystal orientation.

Improved deposition of optoelectronically active perovskite materials is provided with a two step process. In the first step, precursors are deposited on a substrate. In the second step, the deposited precursors are exposed to an atmospheric pressure plasma which efficiently cures the precursors to provide the desired perovskite thin film. The resulting films can have excellent optical properties combined with superior mechanical properties.

A SiC single crystal is prepared by the solution process of placing a seed crystal in contact with a SiC solution in a crucible and letting a SiC single crystal to grow from the seed crystal. The method includes the first growth step of conducting crystal growth using (0001) or (000-1) plane of a SiC single crystal of which the seed crystal is composed, as the growth surface, and the second growth step of conducting crystal growth using (1-100) or (11-20) plane of a SiC single crystal resulting from the first growth step as the growth surface. A SiC single crystal of high homogeneity and quality is obtained, which is reduced in threading screw dislocations, threading edge dislocations, basal plane dislocations, micropipes, and stacking faults.

A SiC single crystal is prepared by the solution process of placing a seed crystal in contact with a SiC solution in a crucible and letting a SiC single crystal to grow from the seed crystal. The method includes the first growth step of conducting crystal growth using (0001) or (000-1) plane of a SiC single crystal of which the seed crystal is composed, as the growth surface, and the second growth step of conducting crystal growth using (1-100) or (11-20) plane of a SiC single crystal resulting from the first growth step as the growth surface. A SiC single crystal of high homogeneity and quality is obtained, which is reduced in threading screw dislocations, threading edge dislocations, basal plane dislocations, micropipes, and stacking faults.

The disclosure discloses a method and apparatus for measuring a size of a crystal grain, and a method for fabricating a poly-silicon thin film. The method for measuring the size of the crystal grain includes: obtaining a grain morphology image of a crystalline region of a crystal, and drawing a grain interface diagram according to the grain morphology image; measuring at least one crystal grain in the grain interface diagram, and determining a transverse size and a longitudinal size of each measured crystal grain; and determining a transverse size and a longitudinal size of a crystal grain of the crystal according to the transverse size and the longitudinal size of each measured crystal grain.

The present invention relates to a manufacturing method for single crystalline metal foil including: thermally treating poly-crystalline metal foil positioned to be spaced apart from a base to manufacture single crystalline metal foil, and a single crystalline metal foil manufactured thereby. According to the present invention, single crystalline metal foil having a large area may be obtained by thermally treating the poly-crystalline metal foil under a condition at which stress applied to the poly-crystalline metal foil is minimized.

The present invention relates to a manufacturing method for single crystalline metal foil including: thermally treating poly-crystalline metal foil positioned to be spaced apart from a base to manufacture single crystalline metal foil, and a single crystalline metal foil manufactured thereby. According to the present invention, single crystalline metal foil having a large area may be obtained by thermally treating the poly-crystalline metal foil under a condition at which stress applied to the poly-crystalline metal foil is minimized.