Aluminum oxide (Al.sub.2O.sub.3) thin films having a high -phase purity and low defect density and methods for making the aluminum oxide thin films are provided. Also provided are epitaxial heterostructures that incorporate the aluminum oxide thin films as growth substrates and methods of forming the heterostructures. The Al.sub.2O.sub.3 films are pure, or nearly pure, -Al.sub.2O.sub.3. As such, the films contain no, or only a very low concentration of, other Al.sub.2O.sub.3 polymorph phases. In particular, the Al.sub.2O.sub.3 films contain no, or only a very low concentration of, the -Al.sub.2O.sub.3 polymorph phase.

Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite.

Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite.

A nonlinear optical crystal of cesium fluorooxoborate, and a method of preparation and use thereof. The crystal has a chemical formula of CsB.sub.4O.sub.6F and a molecular weight of 291.15. It belongs to an orthorhombic crystal system, with a space group of Pna2.sub.1, crystal cell parameters of a=7.9241 , b=11.3996 , c=6.6638 , and ===90, and a unit cell volume of 601.95 .sup.3. A melt method, high temperature solution method, vacuum encapsulation method, hydrothermal method or room temperature solution method is used to grow the crystal of CsB.sub.4O.sub.6F.

The present disclosure provides a film annealing apparatus and method. The film annealing apparatus includes: a carrying platform configured to carry a substrate formed with a film layer thereon; a heater configured to individually heat respective regions of the film layer such that the film layer is annealed; a carrier detector configured to detect carrier concentrations of the respective regions of the film layer; and a controller electrically connected with the carrier detector and the heater respectively and configured to, according to the carrier concentrations of the respective regions of the film layer detected by the carrier detector, adjust at least one of a heating temperature and a heating time of the heater for heating a corresponding one of the regions of the film layer such that the carrier concentrations of the respective regions of the annealed film layer become the same.

The present disclosure provides a film annealing apparatus and method. The film annealing apparatus includes: a carrying platform configured to carry a substrate formed with a film layer thereon; a heater configured to individually heat respective regions of the film layer such that the film layer is annealed; a carrier detector configured to detect carrier concentrations of the respective regions of the film layer; and a controller electrically connected with the carrier detector and the heater respectively and configured to, according to the carrier concentrations of the respective regions of the film layer detected by the carrier detector, adjust at least one of a heating temperature and a heating time of the heater for heating a corresponding one of the regions of the film layer such that the carrier concentrations of the respective regions of the annealed film layer become the same.

Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite.

Provided are a dielectric material, a device including the dielectric material, and a method of preparing the dielectric material, in which the dielectric material may include: a layered perovskite compound, wherein the layered perovskite compound may include at least one selected from a Dion-Jacobson phase, an Aurivillius phase, and a Ruddlesden-Popper phase, a temperature coefficient of capacitance (TCC) of a capacitance at 200? C. with respect to a capacitance at 40? C. may be in a range of about ?15 percent (%) to about 15%, and a permittivity of the dielectric material may be 200 or greater in a range of about 1 kilohertz (kHz) to about 1 megahertz (MHz).

A method for preparing a high-performance single-crystal layered cathode material of formula LiNi.sub.xTM.sub.1-xO.sub.2 (0.6<x<0.9, TM=one or more of Mn, Co, Fe, Zr, V, Ti) or formula Na.sub.0.66TMO.sub.2 (TM=one or more of Ni, Mn, Fe, Cr, and Co). Stoichiometric amounts of transition-metal salts are mixed to form a transition metal salt solution. A precipitating agent is added to the transition metal salt solution followed by co-precipitating a mixed transition metal precipitant. The mixed transition metal precipitant is mixed with a lithium precursor or a sodium precursor to form a cathode material precursor mixture. The cathode material precursor mixture is subjected to various calcining and grinding processes followed by annealing to create single crystal layered cathode material particles.

A method for preparing a high-performance single-crystal layered cathode material of formula LiNi.sub.xTM.sub.1-xO.sub.2 (0.6<x<0.9, TM=one or more of Mn, Co, Fe, Zr, V, Ti) or formula Na.sub.0.66TMO.sub.2 (TM=one or more of Ni, Mn, Fe, Cr, and Co). Stoichiometric amounts of transition-metal salts are mixed to form a transition metal salt solution. A precipitating agent is added to the transition metal salt solution followed by co-precipitating a mixed transition metal precipitant. The mixed transition metal precipitant is mixed with a lithium precursor or a sodium precursor to form a cathode material precursor mixture. The cathode material precursor mixture is subjected to various calcining and grinding processes followed by annealing to create single crystal layered cathode material particles.