A film structure (10) includes a substrate (11), a piezoelectric film (14) formed on the substrate (11) and containing first composite oxide represented by a composition formula Pb(Zr.sub.1-xTi.sub.x)O.sub.3, and a piezoelectric film (15) formed on the piezoelectric film (14) and containing second composite oxide represented by a composition formula Pb(Zr.sub.1-yTi.sub.y)O.sub.3. In the composition formulae, x satisfies 0.10<x≤0.20, and y satisfies 0.35≤y≤0.55. The piezoelectric film (14) has tensile stress, and the piezoelectric film (15) has compressive stress.

A film structure (10) includes a substrate (11), a piezoelectric film (14) formed on the substrate (11) and containing first composite oxide represented by a composition formula Pb(Zr.sub.1-xTi.sub.x)O.sub.3, and a piezoelectric film (15) formed on the piezoelectric film (14) and containing second composite oxide represented by a composition formula Pb(Zr.sub.1-yTi.sub.y)O.sub.3. In the composition formulae, x satisfies 0.10<x≤0.20, and y satisfies 0.35≤y≤0.55. The piezoelectric film (14) has tensile stress, and the piezoelectric film (15) has compressive stress.

A method of performing regional heating of a substrate by electromagnetic induction heating. The method may include applying a semiconductor film to the substrate and controllably energizing a coil positioned near the substrate. The energized coil(s) thereby generates a magnetic flux, which induces a current in the substrate and/or the semiconductor film, thereby heating the substrate and/or semiconductor film. The method may also include relative motion between the coil and the substrate to provide translation heating of the semiconductor film. Additionally, a crystal seeding mechanism may be employed to further control the crystallization process.

There is provided a technique that includes: (a) forming a first film containing a Group 14 element on a substrate at a film-forming temperature; (b) performing a crystal growth of the first film by performing a heat treatment to the first film at a first temperature; and (c) moving the Group 14 element contained in at least part of the first film toward the substrate to crystallize the first film by performing the heat treatment to the first film at a second temperature higher than the first temperature.

The present disclosure manufactures a single-crystal metal film oriented only in the (111) crystal plane by bringing seed crystals comprising (111) oriented seeds or (111) single-crystalline seed crystals into contact with a polycrystalline metal precursor and performing heat treatment, thereby manufacturing a single-crystal metal film oriented only in the (111) crystal plane with a high single crystallization rate irrespective of the thickness and shape of the polycrystalline metal precursor. Additionally, the present disclosure obtains a large-area single-crystal metal film with adjusted orientation angle by introducing single-crystal seed crystals into a polycrystalline metal film at a predetermined angle of rotation and performing heat treatment, and manufactures large-area single-layer graphene with adjusted orientation angle using the same, and multilayer graphene with adjusted orientation angle between graphene by stacking the single-layer graphene.

The present disclosure manufactures a single-crystal metal film oriented only in the (111) crystal plane by bringing seed crystals comprising (111) oriented seeds or (111) single-crystalline seed crystals into contact with a polycrystalline metal precursor and performing heat treatment, thereby manufacturing a single-crystal metal film oriented only in the (111) crystal plane with a high single crystallization rate irrespective of the thickness and shape of the polycrystalline metal precursor. Additionally, the present disclosure obtains a large-area single-crystal metal film with adjusted orientation angle by introducing single-crystal seed crystals into a polycrystalline metal film at a predetermined angle of rotation and performing heat treatment, and manufactures large-area single-layer graphene with adjusted orientation angle using the same, and multilayer graphene with adjusted orientation angle between graphene by stacking the single-layer graphene.

A recycling and synthesis of charge material for secondary batteries generates single-crystal charge materials for producing batteries with greater charge cycle longevity. Charge material particles undergo a heating for fusing or enhancing grain boundaries between polycrystalline particles. The resulting, more well-defined grain boundaries are easily etched by a relatively weak mineral acid solution. The acid solution removes material at the grain boundaries to separate secondary particles into primary particles along the grain boundaries. The resulting single crystal (monocrystalline) charge material particles are washed and filtered, and typically re-sintered to accommodate any needed lithium (lithium carbonate), and result in a charge material with larger surface area, higher lithium diffusivity and lower cation ordering.

A recycling and synthesis of charge material for secondary batteries generates single-crystal charge materials for producing batteries with greater charge cycle longevity. Charge material particles undergo a heating for fusing or enhancing grain boundaries between polycrystalline particles. The resulting, more well-defined grain boundaries are easily etched by a relatively weak mineral acid solution. The acid solution removes material at the grain boundaries to separate secondary particles into primary particles along the grain boundaries. The resulting single crystal (monocrystalline) charge material particles are washed and filtered, and typically re-sintered to accommodate any needed lithium (lithium carbonate), and result in a charge material with larger surface area, higher lithium diffusivity and lower cation ordering.

A fluorescent member includes: a wavelength converter including an incidence part on which a light of a light source is incident and an output part from which a converted light subjected to wavelength conversion as a result of excitation by an incident light is output; and a reflecting part provided in at least a portion of a surface of the wavelength converter. The wavelength converter is comprised of a material whereby a degree of scattering of the light of the light source incident via the incidence part and traveling toward the output part is smaller than in the case of a polycrystalline material.

A method for heat-treating a silicon single crystal wafer to control a BMD density thereof to achieve a predetermined BMD density by performing an RTA heat treatment on a silicon single crystal wafer composed of an Nv region in a nitriding atmosphere, and then performing a second heat treatment, the method including: formulating a relational equation for a relation between BMD density and RTA temperature in advance; and determining an RTA temperature for achieving the predetermined BMD density according to the relational equation. Consequently, a method for heat-treating a silicon single crystal wafer for manufacturing an annealed wafer or an epitaxial wafer each having defect-free surface and a predetermined BMD density in a bulk portion thereof.