A method for heat-treating a silicon single crystal wafer to control a BMD density thereof to achieve a predetermined BMD density by performing an RTA heat treatment on a silicon single crystal wafer composed of an Nv region in a nitriding atmosphere, and then performing a second heat treatment, the method including: formulating a relational equation for a relation between BMD density and RTA temperature in advance; and determining an RTA temperature for achieving the predetermined BMD density according to the relational equation. Consequently, a method for heat-treating a silicon single crystal wafer for manufacturing an annealed wafer or an epitaxial wafer each having defect-free surface and a predetermined BMD density in a bulk portion thereof.

The invention relates to a method for manufacturing a semiconductor component comprising a thin layer of crystalline silicon on a substrate, comprising the steps of: providing a silicon-rich aluminum substrate (S0), depositing a thin layer of amorphous silicon on the substrate (S1), and applying thermal annealing (S2) to the thin layer of amorphous silicon to obtain a thin layer of crystalline silicon on the substrate.

A method of fabricating a semiconductor device includes implanting dopants into a silicon substrate, and performing a thermal anneal process that activates the implanted dopants. In response to activating the implanted dopants, a layer of ultra-thin single-crystal silicon is formed in a portion of the silicon substrate. The method further includes performing a heteroepitaxy process to grow a semiconductor material from the layer of ultra-thin single-crystal silicon.

The present invention relates to a manufacturing method for single crystalline metal foil including: thermally treating poly-crystalline metal foil positioned to be spaced apart from a base to manufacture single crystalline metal foil, and a single crystalline metal foil manufactured thereby. According to the present invention, single crystalline metal foil having a large area may be obtained by thermally treating the poly-crystalline metal foil under a condition at which stress applied to the poly-crystalline metal foil is minimized.

The present invention relates to a manufacturing method for single crystalline metal foil including: thermally treating poly-crystalline metal foil positioned to be spaced apart from a base to manufacture single crystalline metal foil, and a single crystalline metal foil manufactured thereby. According to the present invention, single crystalline metal foil having a large area may be obtained by thermally treating the poly-crystalline metal foil under a condition at which stress applied to the poly-crystalline metal foil is minimized.

An organic material with a porous interpenetrating network and an amount of inorganic material at least partially distributed within the porosity of the organic material is disclosed. A method of producing the organic-inorganic thin films and devices therefrom comprises seeding with nanoparticles and depositing an amorphous material on the nanoparticles.

The present invention provides a precursor of positive electrode active substance particles for non-aqueous electrolyte secondary batteries which have a high discharge voltage and a high discharge capacity, hardly suffer from side reactions with an electrolyte solution, and are excellent in cycle characteristics, positive electrode active substance particles for non-aqueous electrolyte secondary batteries, and processes for producing these particles, and a non-aqueous electrolyte secondary battery. The present invention relates to positive electrode active substance particles for non-aqueous electrolyte secondary batteries having a spinel structure with a composition represented by the following chemical formula (1), in which the positive electrode active substance particles satisfy the following characteristic (A) and/or characteristic (B) when indexed with Fd-3m in X-ray diffraction thereof: (A) when indexed with Fd-3m in X-ray diffraction of the positive electrode active substance particles, a ratio of I(311) to I(111) [I(311)/I(111)] is in the range of 35 to 43%, and/or (B) when indexed with Fd-3m in X-ray diffraction of the positive electrode active substance particles, a gradient of a straight line determined by a least square method in a graph prepared by plotting sin θ in an abscissa thereof and B cos θ in an ordinate thereof wherein B is a full-width at half maximum with respect to each peak position 2θ (10 to 90°) is in the range of 3.0×10.sup.−4 to 20.0×10.sup.−4; and
Li.sub.1+xMn.sub.2−y−zNi.sub.yM.sub.zO.sub.4  Chemical Formula (1)
wherein x, y, z fall within the range of −0.05.Math.x.Math.0.15, 0.4.Math.y.Math.0.6 and 0.Math.z.Math.0.20, respectively; and M is at least one element selected from the group consisting of Mg, Al, Si, Ca, Ti, Co, Zn, Sb, Ba, W and Bi.

The present invention provides a precursor of positive electrode active substance particles for non-aqueous electrolyte secondary batteries which have a high discharge voltage and a high discharge capacity, hardly suffer from side reactions with an electrolyte solution, and are excellent in cycle characteristics, positive electrode active substance particles for non-aqueous electrolyte secondary batteries, and processes for producing these particles, and a non-aqueous electrolyte secondary battery. The present invention relates to positive electrode active substance particles for non-aqueous electrolyte secondary batteries having a spinel structure with a composition represented by the following chemical formula (1), in which the positive electrode active substance particles satisfy the following characteristic (A) and/or characteristic (B) when indexed with Fd-3m in X-ray diffraction thereof: (A) when indexed with Fd-3m in X-ray diffraction of the positive electrode active substance particles, a ratio of I(311) to I(111) [I(311)/I(111)] is in the range of 35 to 43%, and/or (B) when indexed with Fd-3m in X-ray diffraction of the positive electrode active substance particles, a gradient of a straight line determined by a least square method in a graph prepared by plotting sin θ in an abscissa thereof and B cos θ in an ordinate thereof wherein B is a full-width at half maximum with respect to each peak position 2θ (10 to 90°) is in the range of 3.0×10.sup.−4 to 20.0×10.sup.−4; and
Li.sub.1+xMn.sub.2−y−zNi.sub.yM.sub.zO.sub.4  Chemical Formula (1)
wherein x, y, z fall within the range of −0.05.Math.x.Math.0.15, 0.4.Math.y.Math.0.6 and 0.Math.z.Math.0.20, respectively; and M is at least one element selected from the group consisting of Mg, Al, Si, Ca, Ti, Co, Zn, Sb, Ba, W and Bi.

The present invention relates to a manufacturing method for single crystalline metal foil including: thermally treating poly-crystalline metal foil positioned to be spaced apart from a base to manufacture single crystalline metal foil, and a single crystalline metal foil manufactured thereby. According to the present invention, single crystalline metal foil having a large area may be obtained by thermally treating the poly-crystalline metal foil under a condition at which stress applied to the poly-crystalline metal foil is minimized.

The present invention relates to a manufacturing method for single crystalline metal foil including: thermally treating poly-crystalline metal foil positioned to be spaced apart from a base to manufacture single crystalline metal foil, and a single crystalline metal foil manufactured thereby. According to the present invention, single crystalline metal foil having a large area may be obtained by thermally treating the poly-crystalline metal foil under a condition at which stress applied to the poly-crystalline metal foil is minimized.