The present invention relates to solvothermal vapor synthesis methods for the crystallization of a phase from a mixture of selected inorganic or organic precursors in an unsaturated vapor-phase reaction medium.

The present invention relates to solvothermal vapor synthesis methods for the crystallization of a phase from a mixture of selected inorganic or organic precursors in an unsaturated vapor-phase reaction medium.

An apparatus for the manufacture of cubic Boron Nitride includes a pressure vessel having a chamber therein, and a body located in the chamber. The pressure vessel and the body are formed of materials having different coefficients of expansion. The coefficient of expansion of the body is greater than the coefficient of expansion of the pressure vessel. The pressure vessel is formed from a material having a melting point in excess of 1327° C. and capable of withstanding a pressure of at least 4.4Gpa at a temperature of at least 1327° C. The chamber is configured to receive the body, and a Boron Nitride source, the apparatus further comprising a furnace configured to heat at least the body to a temperature at least of 1327° C. The coefficient of expansion of the body is selected such that upon heating thereof to at least 1327° C. the pressure exerted on the Boron Nitride source is at least 4.4Gpa.

A recycling and synthesis of charge material for secondary batteries generates single-crystal charge materials for producing batteries with greater charge cycle longevity. Charge material particles undergo a heating for fusing or enhancing grain boundaries between polycrystalline particles. The resulting, more well-defined grain boundaries are easily etched by a relatively weak mineral acid solution. The acid solution removes material at the grain boundaries to separate secondary particles into primary particles along the grain boundaries. The resulting single crystal (monocrystalline) charge material particles are washed and filtered, and typically re-sintered to accommodate any needed lithium (lithium carbonate), and result in a charge material with larger surface area, higher lithium diffusivity and lower cation ordering.

A recycling and synthesis of charge material for secondary batteries generates single-crystal charge materials for producing batteries with greater charge cycle longevity. Charge material particles undergo a heating for fusing or enhancing grain boundaries between polycrystalline particles. The resulting, more well-defined grain boundaries are easily etched by a relatively weak mineral acid solution. The acid solution removes material at the grain boundaries to separate secondary particles into primary particles along the grain boundaries. The resulting single crystal (monocrystalline) charge material particles are washed and filtered, and typically re-sintered to accommodate any needed lithium (lithium carbonate), and result in a charge material with larger surface area, higher lithium diffusivity and lower cation ordering.

Preparations of a highly coherent diamond nitrogen vacancy (NV.sup.−) and a diamond anvil are provided. A graphite is used as a carbon source, a diamond is used as a crystal seed, aluminum/titanium is used as a nitrogen remover, and a single crystal diamond is synthesized under a high temperature and a high pressure, and high-pressure-high-temperature (HPHT) annealing is performed on the synthesized diamond; after the annealing, multiple NV.sup.−s are generated in <100> and <311> crystal orientation growth regions from scratch, while native NV.sup.−s in a <111> crystal orientation growth region are disappeared; and the <100> and <311> crystal orientation growth regions do not contain defects related to ferromagnetic elements. The high-density and highly coherent NV.sup.−s are produced under nondestructive conditions, and the diamond anvil with controlled NV.sup.− depths are prepared to achieve a precise detection of the NV.sup.− at a pressure above 60 GPa.

Preparations of a highly coherent diamond nitrogen vacancy (NV.sup.−) and a diamond anvil are provided. A graphite is used as a carbon source, a diamond is used as a crystal seed, aluminum/titanium is used as a nitrogen remover, and a single crystal diamond is synthesized under a high temperature and a high pressure, and high-pressure-high-temperature (HPHT) annealing is performed on the synthesized diamond; after the annealing, multiple NV.sup.−s are generated in <100> and <311> crystal orientation growth regions from scratch, while native NV.sup.−s in a <111> crystal orientation growth region are disappeared; and the <100> and <311> crystal orientation growth regions do not contain defects related to ferromagnetic elements. The high-density and highly coherent NV.sup.−s are produced under nondestructive conditions, and the diamond anvil with controlled NV.sup.− depths are prepared to achieve a precise detection of the NV.sup.− at a pressure above 60 GPa.

A silicon carbide ingot producing method is provided. The method produces a silicon carbide ingot in which an internal space of a reactor is depressurized and heated to create a predetermined difference in temperature between upper and lower portions of the internal space. The method produces a silicon carbide ingot in which a plane of a seed crystal corresponding to the rear surface of the silicon carbide ingot is lost minimally. Additionally, the method produces a silicon carbide ingot with few defects and good crystal quality.

A silicon carbide ingot producing method is provided. The method produces a silicon carbide ingot in which an internal space of a reactor is depressurized and heated to create a predetermined difference in temperature between upper and lower portions of the internal space. The method produces a silicon carbide ingot in which a plane of a seed crystal corresponding to the rear surface of the silicon carbide ingot is lost minimally. Additionally, the method produces a silicon carbide ingot with few defects and good crystal quality.

Provided is a piezoelectric single crystal, a method of manufacturing the piezoelectric single crystal, and piezoelectric and dielectric application components using the piezoelectric single crystal. The piezoelectric single crystal shows that characteristics of the piezoelectric single crystal are maximized through the control of composition concerning ions located at [A] from a perovskite type crystal structure ([A][B]O.sub.3), the single crystal of uniform composition can be provided without a composition gradient even in case of complex, chemical composition thanks to a solid phase single crystal growth method, and in particular, the piezoelectric single crystal is provided in a form which causes large resistance to a mechanical impact, and facilitates mechanical processing, so the piezoelectric single crystal can usefully be applied to the piezoelectric application component and the dielectric application component, like ultrasonic transducers, piezoelectric actuators, piezoelectric sensor, dielectric capacitors, using the piezoelectric single crystal pertain.