The present invention relates to the purification of silicon. The present invention provides a method for purification of silicon. The method includes recrystallizing starting material-silicon from a molten solvent comprising aluminum to provide final recrystallized-silicon crystals. The method also includes washing the final recrystallized-silicon crystals with an aqueous acid solution to provide a final acid-washed-silicon. The method also includes directionally solidifying the final acid-washed-silicon to provide final directionally solidified-silicon crystals.

The present invention relates to a scintillator, a method for manufacturing the same, and an application for the same. The scintillator according to an embodiment of the present invention includes a matrix material including, as a main component, thallium, lanthanum, and a halogen element; and an activator doped onto the matrix material. The scintillator according to an embodiment of the present invention has a formula TlaLabXc:yCe, and in the formula: X is a halogen element; a=1, b=2, c=7, or a=2, b=1, c=5, or a=3, b=1, c=6; and y>0 and y0.5. The scintillator according to an embodiment of the present invention has a high efficiency of detecting radiations, a greater light yield, and an excellent fluorescence decay time characteristic.

The invention relates to a method comprising a step of emitting at least one first gas flow (12), a step of sweeping the free surface of the material (15) by means of said first flow (12), followed by a step of discharging the first flow via at least one discharge area. Along with the step of emitting the first flow (12), a step of emitting at least one second gas flow (13) is implemented, said second gas flow forming a protective cover over the free surface of the material (15), at a distance from said free surface. The second gas flow (13) is discharged via an upper part of the discharge area of the container (10), while the first flow (12) is discharged through a lower part of the discharge area.

A hybrid crucible comprising a frame and a bottom plate. The crucible is characterized by the selection of material of these two components, which have been optimized in terms of thermal conductivity. The crucible is adapted to produce crystalline materials. Moreover, a method for producing crystalline material is disclosed.

Embodiments of the present invention relate to a furnace system for growing crystals. The furnace system comprises a crucible for growing a crystal and a furnace comprising a housing having an inner volume. The housing comprises a through hole connecting the inner volume with an environment of the housing. An insulation plug is movably insertable into the through hole for controlling a heat extraction out of the crucible by radiation, wherein the insulation plug is free of a force transmitting contact with the crucible.

Proposed is a method of forming cremation crystals, which is specifically a method of forming cremation crystals by using H3PO4 as a catalyst in a heat treatment process of ashes, thus preventing the ashes from being damaged by volatilization and enabling the crystals to be formed more efficiently. More specifically, proposed is a method of forming cremation crystals by mixing ashes with phosphoric acid obtained through the reduction of phosphorus in skeletal remains, which enables the cremation crystals composed purely of skeletal remains to be provided without additionally introducing other additives, thus satisfying the needs of families or guardians of the deceased desiring to keep cremation crystals composed purely of ashes, and enables both the color and transparency of ultimately formed cremation crystals to be achieved through a single formation process without limitation, thus satisfying the aesthetic needs of consumers and being easily applicable to all kinds of jewelry.

The present disclosure relates to the field of directional solidification, and in particular, to an apparatus, method, and process for directional solidification by liquid metal spraying enhanced cooling (LMSC). The process has the following beneficial effects: the apparatus of the present disclosure can regulate a solidification structure of a casting, refine a dendrite spacing, and reduce or avoid metallurgical defects, and can be used to prepare high-quality large-sized columnar/single crystal blades or other castings.

To provide a single crystal production apparatus that is capable of prolonging the lifetime of a heater, and capable of reducing the cost. A single crystal production apparatus of the present invention is the single crystal production apparatus which produces a single crystal of a metal oxide in an oxidative atmosphere, containing: a base body; a cylindrical furnace body having heat resistance disposed above the base body; a lid member occluding the furnace body; a heater disposed inside the furnace body; a high frequency coil heating the heater through high frequency induction heating; and a crucible heated with the heater, the heater containing a Pt-based alloy and having a zirconia coating on an overall surface of the heater.

A method for producing a mono-crystalline sheet includes providing at least two aperture elements forming a gap in between; providing a molten alloy including silicon in the gap; providing a gaseous precursor medium comprising silicon in the vicinity of the molten alloy; providing a silicon nucleation crystal in the vicinity of the molten alloy; and bringing in contact said silicon nucleation crystal and the molten alloy. A device for producing a mono-crystalline sheet includes at least two aperture elements at a predetermined distance from each other, thereby forming a gap, and being adapted to be heated for holding a molten alloy including silicon by surface tension in the gap between the aperture elements; a precursor gas supply supplies a gaseous precursor medium comprising silicon in the vicinity of the molten alloy; and a positioning device for holding and moving a nucleation crystal in the vicinity of the molten alloy.

Disclosed is a method of growing a zirconia single crystal that has excellent physical properties free from low-temperature degradation and thus enables precise machining, the method including raw material preparation, raw material charging, raw material melting, melt soaking stage, seed production, and single crystal growth.