In a method of manufacturing a monocrystalline crystal, in particular a sapphire, a monocrystalline seed crystal is arranged in a base region of a crucible with a cylindrical jacket-shaped crucible wall or forms a base of the crucible and a crystallographic c-axis of the seed crystal is aligned corresponding to a longitudinal axis of the crucible extending in the direction of the top of the crucible wall, whereupon a base material is arranged above the seed crystal in the crucible and melted, crystal growth taking place progressively in the direction of the c-axis by crystallization at a boundary layer between melted base material and seed crystal.

A calcium metaborate birefringent crystal and a preparation method and use thereof, the crystal having a chemical formula of CaB.sub.2O.sub.4 and a molecular weight of 125.70, and belonging to the orthorhombic crystal system and space group Pbcn with unit-cell parameters a=11.60(4), b=4.28(8), c=6.21(6), and Z=4, wherein the calcium metaborate birefringent crystal is a negative biaxial crystal with a transmission range of 165-3400 nm and a birefringence between 0.09-0.36; the crystal is applicable to infrared-visible-ultraviolet-deep ultraviolet bands, and is grown by a melt method, a flux method, a Bridgman method or a heat exchange method; the crystal obtained by the method of the present invention is easy to grow and easy to process; and can be used for making polarizing beam-splitting prisms.

A calcium metaborate birefringent crystal and a preparation method and use thereof, the crystal having a chemical formula of CaB.sub.2O.sub.4 and a molecular weight of 125.70, and belonging to the orthorhombic crystal system and space group Pbcn with unit-cell parameters a=11.60(4), b=4.28(8), c=6.21(6), and Z=4, wherein the calcium metaborate birefringent crystal is a negative biaxial crystal with a transmission range of 165-3400 nm and a birefringence between 0.09-0.36; the crystal is applicable to infrared-visible-ultraviolet-deep ultraviolet bands, and is grown by a melt method, a flux method, a Bridgman method or a heat exchange method; the crystal obtained by the method of the present invention is easy to grow and easy to process; and can be used for making polarizing beam-splitting prisms.

A method for depositing silicon feedstock material may include introducing a first gas including silicon into a reactor chamber and introducing a second gas including at least one of gallium or indium into the reactor chamber and depositing silicon doped with at least one of gallium or indium onto a surface within the reactor chamber. Doped silicon feedstock material may be obtained by the method may be used for obtaining a silicon wafer, a solar cell, and/or a PV module.

A method for depositing silicon feedstock material may include introducing a first gas including silicon into a reactor chamber and introducing a second gas including at least one of gallium or indium into the reactor chamber and depositing silicon doped with at least one of gallium or indium onto a surface within the reactor chamber. Doped silicon feedstock material may be obtained by the method may be used for obtaining a silicon wafer, a solar cell, and/or a PV module.

Provided is a method for producing a single crystal, wherein compositional variations and defects in the single crystal can be prevented and a single crystal having uniform characteristics in the growth direction can be produced at high yield. In this method for producing a single crystal, a PbTiO3-containing single crystal is produced by the vertical Bridgman technique, wherein the thickness of a melt layer containing the melt in a crucible is at least 30 mm.

Provided is a method for producing a single crystal, wherein compositional variations and defects in the single crystal can be prevented and a single crystal having uniform characteristics in the growth direction can be produced at high yield. In this method for producing a single crystal, a PbTiO3-containing single crystal is produced by the vertical Bridgman technique, wherein the thickness of a melt layer containing the melt in a crucible is at least 30 mm.

Provided is a CdZnTe monocrystalline substrate which has a small leakage current even when a voltage is applied from a low voltage to a high voltage, and which has a lower variation in resistivity with respect to applied voltage changes from 0 to 900 V, and which can maintain a stable resistivity. A semiconductor wafer comprising a cadmium zinc telluride monocrystal having a zinc concentration of 4.0 at % or more and 6.5 at % or less and a chlorine concentration of 0.1 ppm by weight or more and 5.0 ppm by weight or less, wherein when a voltage is applied in a range of from 0 to 900 V, the semiconductor wafer has a resistivity for each applied voltage value of 1.0?10.sup.7 ?cm or more and 7.0?10.sup.8 ?cm or less, and wherein a relative variation coefficient of each resistivity to the applied voltages in a range of from 0 to 900 V is 100% or less.

Provided is a CdZnTe monocrystalline substrate which has a small leakage current even when a voltage is applied from a low voltage to a high voltage, and which has a lower variation in resistivity with respect to applied voltage changes from 0 to 900 V, and which can maintain a stable resistivity. A semiconductor wafer comprising a cadmium zinc telluride monocrystal having a zinc concentration of 4.0 at % or more and 6.5 at % or less and a chlorine concentration of 0.1 ppm by weight or more and 5.0 ppm by weight or less, wherein when a voltage is applied in a range of from 0 to 900 V, the semiconductor wafer has a resistivity for each applied voltage value of 1.0?10.sup.7 ?cm or more and 7.0?10.sup.8 ?cm or less, and wherein a relative variation coefficient of each resistivity to the applied voltages in a range of from 0 to 900 V is 100% or less.

The present disclosure relates to a process for fabricating a crystalline scintillator material with a structure of elpasolite type of theoretical composition A.sub.2BC.sub.(1-y)M.sub.yX.sub.(6-y) wherein: A is chosen from among Cs, Rb, K, Na, B is chosen from among Li, K, Na, C is chosen from among the rare earths, Al, Ga, M is chosen from among the alkaline earths, X is chosen from among F, Cl, Br, I,
y representing the atomic fraction of substitution of C by M and being in the range extending from 0 to 0.05, comprising its crystallization by cooling from a melt bath comprising r moles of A and s moles of B, the melt bath in contact with the material containing A and B in such a way that 2s/r is above 1. The process shows an improved fabrication yield. Moreover, the crystals obtained can have compositions closer to stoichiometry and have improved scintillation properties.