Patent classifications
C30B11/14
Arcuate Seed Casting Method
A casting method includes forming a seed. The seed has a first end and a second end. The forming includes bending a seed precursor. The seed second end is placed in contact or spaced facing relation a chill plate. The first end is contacted with molten material. The molten material is cooled and solidifies so that a crystalline structure of the seed propagates into the solidifying material. The forming further includes inserting the bent seed precursor into a sleeve leaving the bent seed precursor protruding from a first end of the sleeve.
SILICON INGOT, SILICON BLOCK, SILICON SUBSTRATE, MANUFACTURING METHOD FOR SILICON INGOT, AND SOLAR CELL
An ingot having a first surface, a second surface opposite to the first surface, and a third surface connecting the first surface and the second surface in a first direction includes a first mono-like crystalline portion, a first intermediate portion including a mono-like crystalline section, a second mono-like crystalline portion, a second intermediate portion including a mono-like crystalline section, and a third mono-like crystalline portion. The first mono-like crystalline portion, the first intermediate portion, and the second mono-like crystalline portion are adjacent to one another in sequence in a second direction perpendicular to the first direction. The first mono-like crystalline portion, the second intermediate portion, and the third mono-like crystalline portion are adjacent to one another in sequence in a third direction perpendicular to the first direction and crossing the second direction. The first mono-like crystalline portion and the second mono-like crystalline portion have a greater width than the first intermediate portion in the second direction. The first mono-like crystalline portion and the third mono-like crystalline portion have a greater width than the second intermediate portion in the third direction. Boundaries between the first mono-like crystalline portion and the first intermediate portion and between the second mono-like crystalline portion and the first intermediate portion, and boundaries between the first mono-like crystalline portion and the second intermediate portion and between the third mono-like crystalline portion and the second intermediate portion each include a coincidence boundary.
SILICON INGOT, SILICON BLOCK, SILICON SUBSTRATE, MANUFACTURING METHOD FOR SILICON INGOT, AND SOLAR CELL
An ingot having a first surface, a second surface opposite to the first surface, and a third surface connecting the first surface and the second surface in a first direction includes a first mono-like crystalline portion, a first intermediate portion including a mono-like crystalline section, a second mono-like crystalline portion, a second intermediate portion including a mono-like crystalline section, and a third mono-like crystalline portion. The first mono-like crystalline portion, the first intermediate portion, and the second mono-like crystalline portion are adjacent to one another in sequence in a second direction perpendicular to the first direction. The first mono-like crystalline portion, the second intermediate portion, and the third mono-like crystalline portion are adjacent to one another in sequence in a third direction perpendicular to the first direction and crossing the second direction. The first mono-like crystalline portion and the second mono-like crystalline portion have a greater width than the first intermediate portion in the second direction. The first mono-like crystalline portion and the third mono-like crystalline portion have a greater width than the second intermediate portion in the third direction. Boundaries between the first mono-like crystalline portion and the first intermediate portion and between the second mono-like crystalline portion and the first intermediate portion, and boundaries between the first mono-like crystalline portion and the second intermediate portion and between the third mono-like crystalline portion and the second intermediate portion each include a coincidence boundary.
Arcuate Seed Casting Method
A casting method includes forming a seed. The seed has a first end and a second end and an inner diameter (ID) surface and an outer diameter (OD) surface. The seed second end is placed in contact or spaced facing relation with a chill plate. The first end is contacted with molten material. The molten material is cooled and solidified so that a crystalline structure of the seed propagates into the solidifying material. At least a portion of the seed contacted with the molten material has a solidus higher than a solidus of at least an initial pour portion of the molten material.
Arcuate Seed Casting Method
A casting method includes forming a seed. The seed has a first end and a second end and an inner diameter (ID) surface and an outer diameter (OD) surface. The seed second end is placed in contact or spaced facing relation with a chill plate. The first end is contacted with molten material. The molten material is cooled and solidified so that a crystalline structure of the seed propagates into the solidifying material. At least a portion of the seed contacted with the molten material has a solidus higher than a solidus of at least an initial pour portion of the molten material.
MOULD FOR MANUFACTURING A COMPONENT BY POURING METAL AND EPITAXIAL GROWTH, AND ASSOCIATED MANUFACTURING METHOD
A mould for use in manufacturing a single-crystal component by metal casting and epitaxial growth, includes a cavity in which the component is to be formed and a housing having an elliptical cross-section in which a single-crystal seed is disposed, the seed having an elliptical cross-section defined by a minor axis and by a major axis, the housing being in fluid communication with the cavity via an opening of circular cross-section through which molten metal is to flow, the single-crystal seed and the opening being centred on the same vertical axis, in which the minor axis and the major axis of the cross-section of the seed are oriented as a function of the secondary crystallographic orientations of the single-crystal forming the single-crystal seed.
Arcuate seed casting method
A casting method includes forming a seed. The seed has a first end and a second end. The forming includes bending a seed precursor. The seed second end is placed in contact or spaced facing relation a chill plate. The first end is contacted with molten material. The molten material is cooled and solidifies so that a crystalline structure of the seed propagates into the solidifying material. The forming further includes inserting the bent seed precursor into a sleeve leaving the bent seed precursor protruding from a first end of the sleeve.
Arcuate seed casting method
A casting method includes forming a seed. The seed has a first end and a second end and an inner diameter (ID) surface and an outer diameter (OD) surface. The seed second end is placed in contact or spaced facing relation with a chill plate. The first end is contacted with molten material. The molten material is cooled and solidified so that a crystalline structure of the seed propagates into the solidifying material. At least a portion of the seed contacted with the molten material has a solidus higher than a solidus of at least an initial pour portion of the molten material.
Arcuate seed casting method
A casting method includes forming a seed. The seed has a first end and a second end and an inner diameter (ID) surface and an outer diameter (OD) surface. The seed second end is placed in contact or spaced facing relation with a chill plate. The first end is contacted with molten material. The molten material is cooled and solidified so that a crystalline structure of the seed propagates into the solidifying material. At least a portion of the seed contacted with the molten material has a solidus higher than a solidus of at least an initial pour portion of the molten material.
METHOD OF AUTOMATICALLY MEASURING SEED MELT BACK OF CRYSTALLINE MATERIAL
A method and apparatus for measuring a melt back of a seed in a boule are provided. The method includes lifting a boule once it has been produced using an actuating device onto a support table to automatically manipulate the boule from a furnace to the support table. The melt back of the seed is then automatically measured using a vision system that is installed on an imaging device disposed below the boule.