An apparatus is configured to pull a single crystal of semiconductor material from a melt contained in a crucible. The apparatus includes: a rotatable pulling shaft; a rotatable crucible shaft; a double worm gear between a drive and the pulling shaft; and a further double worm gear between a further drive and the crucible shaft.

An apparatus is configured to pull a single crystal of semiconductor material from a melt contained in a crucible. The apparatus includes: a rotatable pulling shaft; a rotatable crucible shaft; a double worm gear between a drive and the pulling shaft; and a further double worm gear between a further drive and the crucible shaft.

The present invention relates to a crucible for an ingot growing apparatus capable of increasing the life span of a graphite crucible. One embodiment of the present invention provides a crucible for an ingot growing apparatus including: a quartz crucible containing a silicon melt and having a lower surface part with a curved shape; a graphite crucible accommodating the quartz crucible and having a body shape divided into at least two parts with respect to a lower surface thereof; and an inner supporter supported between the lower surface of the quartz crucible and the graphite crucible.

The present invention relates to a crucible for an ingot growing apparatus capable of increasing the life span of a graphite crucible. One embodiment of the present invention provides a crucible for an ingot growing apparatus including: a quartz crucible containing a silicon melt and having a lower surface part with a curved shape; a graphite crucible accommodating the quartz crucible and having a body shape divided into at least two parts with respect to a lower surface thereof; and an inner supporter supported between the lower surface of the quartz crucible and the graphite crucible.

A quartz glass crucible (1) includes: a crucible body (10) made of silica glass; and a crystallization-accelerator-containing layer (13) formed on an outer surface of the crucible body (10). A concentration of a crystallization accelerator contained in the crystallization-accelerator-containing layer (13) is 1.0×10.sup.13 atoms/cm.sup.2 or more and 4.8×10.sup.15 atoms/cm.sup.2 or less. The quarts glass crucible is intended to be capable of not only enduring a single crystal pulling-up process that takes a very long time, such as multi-pulling, but also stably controlling the oxygen concentration and crystal diameter of a silicon single crystal by eliminating a gap between the carbon susceptor and the crucible as much as possible.

A quartz glass crucible (1) includes: a crucible body (10) made of silica glass; and a crystallization-accelerator-containing layer (13) formed on an outer surface of the crucible body (10). A concentration of a crystallization accelerator contained in the crystallization-accelerator-containing layer (13) is 1.0×10.sup.13 atoms/cm.sup.2 or more and 4.8×10.sup.15 atoms/cm.sup.2 or less. The quarts glass crucible is intended to be capable of not only enduring a single crystal pulling-up process that takes a very long time, such as multi-pulling, but also stably controlling the oxygen concentration and crystal diameter of a silicon single crystal by eliminating a gap between the carbon susceptor and the crucible as much as possible.

Ingot puller apparatus for preparing a single crystal silicon ingot by the Czochralski method are disclosed. The ingot puller apparatus includes a heat shield. The heat shield has a leg segment that includes a void (i.e., an open space without insulation) disposed in the leg segment. The heat shield may also include insulation partially within the heat shield.

Ingot puller apparatus for preparing a single crystal silicon ingot by the Czochralski method are disclosed. The ingot puller apparatus includes a heat shield. The heat shield has a leg segment that includes a void (i.e., an open space without insulation) disposed in the leg segment. The heat shield may also include insulation partially within the heat shield.

The invention provides a semiconductor crystal growth device comprising a furnace body; a crucible; a pulling device; a horizontal magnetic field applying device; and a deflector, being barrel-shaped and disposed above the silicon melt in the furnace body in a vertical direction, and the pulling device pulls the silicon ingot through the deflector in the vertical direction; wherein the bottom of the deflector has different thermal reflection coefficients at different positions, and the thermal reflection coefficient of the bottom of the deflector in the direction of the horizontal magnetic field is smaller than that in the direction perpendicular to the horizontal magnetic field. According to the semiconductor crystal growth device of the present invention, the temperature distribution inside the melt silicon and quality of the semiconductor crystal are improved.

The invention provides a semiconductor crystal growth device comprising a furnace body; a crucible; a pulling device; a horizontal magnetic field applying device; and a deflector, being barrel-shaped and disposed above the silicon melt in the furnace body in a vertical direction, and the pulling device pulls the silicon ingot through the deflector in the vertical direction; wherein the bottom of the deflector has different thermal reflection coefficients at different positions, and the thermal reflection coefficient of the bottom of the deflector in the direction of the horizontal magnetic field is smaller than that in the direction perpendicular to the horizontal magnetic field. According to the semiconductor crystal growth device of the present invention, the temperature distribution inside the melt silicon and quality of the semiconductor crystal are improved.