A single crystal manufacturing apparatus to grow a single crystal upward from a seed crystal, the apparatus including an insulated space thermally insulated from a space outside the single crystal manufacturing apparatus, an induction heating coil placed outside the insulated space, a thermal insulation plate that divides the insulated space into a first space including a crystal growth region to grow the single crystal and a second space above the first space and includes a hole above the crystal growth region, a heating element that is placed in the second space and generates heat by induction heating using the induction heating coil to heat the inside of the insulated space, and a support shaft to vertically movably support the seed crystal from below.

A single crystal manufacturing apparatus to grow a single crystal upward from a seed crystal, the apparatus including an insulated space thermally insulated from a space outside the single crystal manufacturing apparatus, an induction heating coil placed outside the insulated space, a thermal insulation plate that divides the insulated space into a first space including a crystal growth region to grow the single crystal and a second space above the first space and includes a hole above the crystal growth region, a heating element that is placed in the second space and generates heat by induction heating using the induction heating coil to heat the inside of the insulated space, and a support shaft to vertically movably support the seed crystal from below.

An apparatus for growing a crystal includes a growth chamber and a melt chamber thermally isolated from the growth chamber. The growth chamber includes: a growth crucible configured to contain a liquid melt; and a die located in the growth crucible, the die having a die opening and one or more capillaries extending from within the growth crucible toward the die opening. The melt chamber includes: a melt crucible configured to receive feedstock material; and at least one heating element positioned within the melt chamber relative to the melt crucible to melt the feedstock material within the melt crucible to form the liquid melt. The apparatus also includes at least one capillary conveyor in fluid communication with the melt crucible and the growth crucible to transport the liquid melt from the melt crucible to the growth crucible.

An apparatus for growing a crystal includes a growth chamber and a melt chamber thermally isolated from the growth chamber. The growth chamber includes: a growth crucible configured to contain a liquid melt; and a die located in the growth crucible, the die having a die opening and one or more capillaries extending from within the growth crucible toward the die opening. The melt chamber includes: a melt crucible configured to receive feedstock material; and at least one heating element positioned within the melt chamber relative to the melt crucible to melt the feedstock material within the melt crucible to form the liquid melt. The apparatus also includes at least one capillary conveyor in fluid communication with the melt crucible and the growth crucible to transport the liquid melt from the melt crucible to the growth crucible.

One embodiment is directed to a method of testing a polycrystalline laminate formed on a substrate surface of a substrate which is mounted to a sample holder. The substrate surface includes a substrate length edge having a substrate length and a substrate width edge having a substrate width. The polycrystalline laminate has a notch extending beyond the substrate width edge of the substrate surface. The method comprises at least one of: for tensile cleavage testing, applying a tensile load on the notch of the polycrystalline laminate in a direction generally perpendicular to the substrate surface and away from the substrate surface; and for shear sliding testing, applying a shear load on the end of the polycrystalline laminate in a length direction generally parallel to the substrate length edge of the substrate surface. A notch edge formation piece and a notch end formation piece may be used to form the laminate.

One embodiment is directed to a method of testing a polycrystalline laminate formed on a substrate surface of a substrate which is mounted to a sample holder. The substrate surface includes a substrate length edge having a substrate length and a substrate width edge having a substrate width. The polycrystalline laminate has a notch extending beyond the substrate width edge of the substrate surface. The method comprises at least one of: for tensile cleavage testing, applying a tensile load on the notch of the polycrystalline laminate in a direction generally perpendicular to the substrate surface and away from the substrate surface; and for shear sliding testing, applying a shear load on the end of the polycrystalline laminate in a length direction generally parallel to the substrate length edge of the substrate surface. A notch edge formation piece and a notch end formation piece may be used to form the laminate.

A crystal pulling system for growing a monocrystalline ingot from a melt of semiconductor or solar-grade material includes a crucible for containing the melt of material, a pulling mechanism configured to pull the ingot from the melt along a pull axis, and a multi-stage heat exchanger defining a central passage for receiving the ingot as the ingot is pulled by the pulling mechanism. The heat exchanger defines a plurality of cooling zones arranged vertically along the pull axis of the crystal pulling system. The plurality of cooling zones includes two enhanced-rate cooling zones and a reduced-rate cooling zone disposed vertically between the two enhanced-rate cooling zones.

A crystal pulling system for growing a monocrystalline ingot from a melt of semiconductor or solar-grade material includes a crucible for containing the melt of material, a pulling mechanism configured to pull the ingot from the melt along a pull axis, and a multi-stage heat exchanger defining a central passage for receiving the ingot as the ingot is pulled by the pulling mechanism. The heat exchanger defines a plurality of cooling zones arranged vertically along the pull axis of the crystal pulling system. The plurality of cooling zones includes two enhanced-rate cooling zones and a reduced-rate cooling zone disposed vertically between the two enhanced-rate cooling zones.

A heat exchange device for a single crystal furnace is provided, including a heat exchanger on which an inner chamber for heat exchange defined in a shape of circular truncated cone is formed. A convex portion is defined by a chamber wall of the inner chamber for heat exchange partially projecting along a radial direction of the inner chamber for heat exchange, the convex portion extends along a direction of an axis of the inner chamber for heat exchange, and a minimum distance between an end away from the chamber wall of the inner chamber for heat exchange of the convex portion and the axis of the inner chamber for heat exchange is denoted as L, which is greater than or equal to a minimum radius of a cross section of the inner chamber for heat exchange.

A heat exchange device for a single crystal furnace is provided, including a heat exchanger on which an inner chamber for heat exchange defined in a shape of circular truncated cone is formed. A convex portion is defined by a chamber wall of the inner chamber for heat exchange partially projecting along a radial direction of the inner chamber for heat exchange, the convex portion extends along a direction of an axis of the inner chamber for heat exchange, and a minimum distance between an end away from the chamber wall of the inner chamber for heat exchange of the convex portion and the axis of the inner chamber for heat exchange is denoted as L, which is greater than or equal to a minimum radius of a cross section of the inner chamber for heat exchange.