Disclosed a heat shield and a monocrystalline silicon growth furnace using the same. The heat shield is arranged in an upper portion of a melt crucible in the monocrystalline silicon growth furnace, and comprises a shield wall and a shield bottom provided with a window for pulling melt through. The shield bottom comprises a top layer, a bottom layer and a side wall. The side wall is connected between the top and bottom layers and encloses the window. The bottom layer faces towards a liquid level of the melt, and is designed as a serrated structure. With the serrated structure of the bottom layer of the shield bottom, the external thermal energy can be prevented from being absorbed by the monocrystalline silicon crystal, thereby avoiding excessive thermal compensation on a crystal surface, effectively optimizing longitudinal temperature gradient of the crystal, and improving the radial quality uniformity of a silicon wafer.

Disclosed a heat shield and a monocrystalline silicon growth furnace using the same. The heat shield is arranged in an upper portion of a melt crucible in the monocrystalline silicon growth furnace, and comprises a shield wall and a shield bottom provided with a window for pulling melt through. The shield bottom comprises a top layer, a bottom layer and a side wall. The side wall is connected between the top and bottom layers and encloses the window. The bottom layer faces towards a liquid level of the melt, and is designed as a serrated structure. With the serrated structure of the bottom layer of the shield bottom, the external thermal energy can be prevented from being absorbed by the monocrystalline silicon crystal, thereby avoiding excessive thermal compensation on a crystal surface, effectively optimizing longitudinal temperature gradient of the crystal, and improving the radial quality uniformity of a silicon wafer.

Disclosed is a thin-film heat insulation sheet for a monocrystalline silicon growth furnace, which comprises one or more first refractive layers and one or more second refractive layers which have different refractivity and are laminated alternately to form a laminated structure. Also disclosed is a monocrystalline silicon growth furnace, in which the thin-film heat insulation sheet is arranged on a heat shield. The thin-film heat insulation sheet has good reflectivity in wavelength ranges of heat radiation. When disposed on a heat shield to be applied to the monocrystalline silicon growth furnace, the thin-film heat insulation sheet not only can improve ability of the heat shield to reflect heat energy, reduce heat dissipation of molten silicon melt, and improve heat energy utilization, but also is conducive to heat insulation performance of the heat field, thereby improving the quality of the heat field to improve the quality and yield of monocrystalline silicon.

Disclosed is a thin-film heat insulation sheet for a monocrystalline silicon growth furnace, which comprises one or more first refractive layers and one or more second refractive layers which have different refractivity and are laminated alternately to form a laminated structure. Also disclosed is a monocrystalline silicon growth furnace, in which the thin-film heat insulation sheet is arranged on a heat shield. The thin-film heat insulation sheet has good reflectivity in wavelength ranges of heat radiation. When disposed on a heat shield to be applied to the monocrystalline silicon growth furnace, the thin-film heat insulation sheet not only can improve ability of the heat shield to reflect heat energy, reduce heat dissipation of molten silicon melt, and improve heat energy utilization, but also is conducive to heat insulation performance of the heat field, thereby improving the quality of the heat field to improve the quality and yield of monocrystalline silicon.

Disclosed is a composite heat insulation structure for a monocrystalline silicon growth furnace, comprising a supporting layer and a laminated structure on the supporting layer. The laminated structure comprises one or more first refractive layers and one or more second refractive layers which have different refractivity and are disposed alternately. Also disclosed is a monocrystalline silicon growth furnace in which the composite heat insulation structure is disposed on a heat shield. When disposed on a heat shield to be applied to the monocrystalline silicon growth furnace, the composite heat insulation structure can improve ability of the heat shield to reflect heat energy, reduce heat dissipation of silicon melt, and play a role of heat insulation on a heat field, thereby improving the quality of the heat field to improve the quality and yield of monocrystalline silicon.

Disclosed are a heat shield device for insulating heat and a smelting furnace. The heat shield device comprises a heat shield unit and a heat insulation unit. The heat shield unit comprises a shield bottom provided with a through hole, and a shield wall disposed on a side of the shield bottom opposite to the through hole. The heat insulation unit comprises a heat insulation part disposed above a layer plate of the shield bottom close to a liquid level of a crucible and a heat preservation part. The smelting furnace used for growth of monocrystalline silicon comprises the heat shield device, a crucible and a heater. The heat shield device of the present invention can increase a temperature gradient between the heat shield unit and the crucible, thereby facilitating rapid formation of silicon crystal bar and improving production efficiency of the silicon crystal bar.

Disclosed are a heat shield device for insulating heat and a smelting furnace. The heat shield device comprises a heat shield unit and a heat insulation unit. The heat shield unit comprises a shield bottom provided with a through hole, and a shield wall disposed on a side of the shield bottom opposite to the through hole. The heat insulation unit comprises a heat insulation part disposed above a layer plate of the shield bottom close to a liquid level of a crucible and a heat preservation part. The smelting furnace used for growth of monocrystalline silicon comprises the heat shield device, a crucible and a heater. The heat shield device of the present invention can increase a temperature gradient between the heat shield unit and the crucible, thereby facilitating rapid formation of silicon crystal bar and improving production efficiency of the silicon crystal bar.

Disclosed a heat shield device for a single crystal production furnace. The heat shield device is disposed above a melt crucible of the single crystal production furnace, and comprises a shell, supporting members, heat insulation plates and a direction control component. The supporting members and the heat insulation plates are disposed within of the shell. One end of the supporting member is fixedly connected with an inner wall of the shell. The direction control component is connected with the heat insulation plate. The supporting members serve as supporting points of the heat insulation plates, and cooperate with the direction control component to control rotation of the heat insulation plates relative to the shell. A rotatable angle of the heat insulation plate faces a cylindrical surface of monocrystalline silicon, and a bottom surface of the shell faces interior of the melt crucible.

Disclosed a heat shield device for a single crystal production furnace. The heat shield device is disposed above a melt crucible of the single crystal production furnace, and comprises a shell, supporting members, heat insulation plates and a direction control component. The supporting members and the heat insulation plates are disposed within of the shell. One end of the supporting member is fixedly connected with an inner wall of the shell. The direction control component is connected with the heat insulation plate. The supporting members serve as supporting points of the heat insulation plates, and cooperate with the direction control component to control rotation of the heat insulation plates relative to the shell. A rotatable angle of the heat insulation plate faces a cylindrical surface of monocrystalline silicon, and a bottom surface of the shell faces interior of the melt crucible.

Disclosed are a heat shield device and a smelting furnace. The heat shield device comprises a heat shield unit and a heat insulation unit. The heat shield unit comprises a shield bottom provided with a through hole, and a shield wall comprising a first layer plate, a second layer plate and a lateral plate. One side of the lateral plate, the first layer plate and the second layer plate enclose the through hole; and the other side of the lateral plate, the first layer plate, the second layer plate and the shield wall enclose an accommodation cavity. The heat insulation unit comprises a heat insulation part disposed at the other side of the lateral plate and a heat preservation part. The heat shield device of the present invention can increase a temperature gradient, thereby facilitating rapid formation of silicon crystal bar and improving production efficiency of the silicon crystal bar.