Methods for producing single crystal silicon ingots by Continuous Czochralski (CCz) are disclosed. A batch of buffer members (e.g., quartz cullets) is added to an outer melt zone of the crucible assembly before the main body of the ingot is grown. In some embodiments, the ratio of the mass M of the batch of buffer members added to the melt to the time between adding the batch of buffer members to the melt and when the ingot main body begins to grow is controlled such that the ratio of M/T is greater than a threshold M/T.

An apparatus for growing an ingot from a melt accommodated in a crucible of a chamber comprises a first senor and a controller.

The first sensor is installed on one side of the chamber for detecting a detection signal in real time from a side portion of the ingot. The side portion of the ingot rotates via a detection area focused by the first sensor. The controller obtains a detection signal at each of a plurality of sampling points based on detection signals detected in real time, obtains a value of a central point of the ingot based on the detection signal at each of the plurality of sampling points, and determines whether or not the ingot is defective based on the value of the central point of the ingot.

Methods for producing monocrystalline silicon ingots by horizontal magnetic field Czochralski are disclosed. During growth of the neck and/or growth of at least a portion of the crown, a magnetic field is not applied to the neck and/or crown or a relatively weak magnetic field of 1500 gauss or less is applied. A horizontal magnetic field (e.g., greater than 1500 gauss) is applied during growth of the ingot main body.

Methods for producing monocrystalline silicon ingots by horizontal magnetic field Czochralski are disclosed. During growth of the neck and/or growth of at least a portion of the crown, a magnetic field is not applied to the neck and/or crown or a relatively weak magnetic field of 1500 gauss or less is applied. A horizontal magnetic field (e.g., greater than 1500 gauss) is applied during growth of the ingot main body.

A method of controlling a convection pattern of a silicon melt includes: acquiring a temperature at a first measurement point not overlapping a rotation center of a quartz crucible on a surface of the silicon melt, the quartz crucible rotating in a magnetic-field-free state; determining that the temperature at the first measurement point periodically changes; and fixing a direction of a convection flow to a single direction in a plane orthogonal with an application direction of a horizontal magnetic field in the silicon melt by starting a drive of a magnetic-field applying portion to apply the horizontal magnetic field to the silicon melt when a temperature change at the first measurement point reaches a predetermined state, and subsequently raising the intensity to 0.2 tesla or more.

A method of controlling a convection pattern of a silicon melt includes: acquiring a temperature at a first measurement point not overlapping a rotation center of a quartz crucible on a surface of the silicon melt, the quartz crucible rotating in a magnetic-field-free state; determining that the temperature at the first measurement point periodically changes; and fixing a direction of a convection flow to a single direction in a plane orthogonal with an application direction of a horizontal magnetic field in the silicon melt by starting a drive of a magnetic-field applying portion to apply the horizontal magnetic field to the silicon melt when a temperature change at the first measurement point reaches a predetermined state, and subsequently raising the intensity to 0.2 tesla or more.

A method for growing a single crystal silicon ingot by the continuous Czochralski method is disclosed. The melt depth and thermal conditions are constant during growth because the silicon melt is continuously replenished as it is consumed, and the crucible location is fixed. The critical v/G is determined by the hot zone configuration, and the continuous replenishment of silicon to the melt during growth enables growth of the ingot at a constant pull rate consistent with the critical v/G during growth of a substantial portion of the main body of the ingot. The continuous replenishment of silicon is accompanied by periodic or continuous nitrogen addition to the melt to result in a nitrogen doped ingot.

A method for growing a single crystal silicon ingot by the continuous Czochralski method is disclosed. The melt depth and thermal conditions are constant during growth because the silicon melt is continuously replenished as it is consumed, and the crucible location is fixed. The critical v/G is determined by the hot zone configuration, and the continuous replenishment of silicon to the melt during growth enables growth of the ingot at a constant pull rate consistent with the critical v/G during growth of a substantial portion of the main body of the ingot. The continuous replenishment of silicon is accompanied by periodic or continuous nitrogen addition to the melt to result in a nitrogen doped ingot.

A method for growing a single crystal silicon ingot by the continuous Czochralski method is disclosed. The melt depth and thermal conditions are constant during growth because the silicon melt is continuously replenished as it is consumed, and the crucible location is fixed. The critical v/G is determined by the hot zone configuration, and the continuous replenishment of silicon to the melt during growth enables growth of the ingot at a constant pull rate consistent with the critical v/G during growth of a substantial portion of the main body of the ingot. The continuous replenishment of silicon is accompanied by periodic or continuous nitrogen addition to the melt to result in a nitrogen doped ingot.

An embodiment of the present invention provides a heat shield device for low oxygen single crystal growth of a single crystal ingot growth device, including: a crucible containing a silicon melt; a graphite crucible surrounding the crucible; a heat shield made of a low-emissivity (emissivity<0.3) material that surrounds a central lower portion of the graphite crucible and is spaced apart from the graphite crucible by a predetermined distance; and a connection part connecting the heat shield and the graphite crucible. Through the heat shield device according to the first embodiment of the present invention and the heat shield coating according to the second embodiment of the present invention, the concentration of oxygen flowing into the crystal may be reduced by lowering the temperature of the bottom of the crucible during the crystal growth, and the yield may be improved by reducing the BMD concentration in the semiconductor device through the growth of high-quality and low-oxygen single crystal.