A method of manufacturing an epitaxial silicon wafer that includes growing a silicon single crystal ingot doped with a boron concentration of 2.710.sup.17 atoms/cm.sup.3 or more and 1.310.sup.19 atoms/cm.sup.3 or less by the CZ method; producing a silicon substrate by processing the silicon single crystal ingot; and forming an epitaxial layer on a surface of the silicon substrate. During growing of the silicon single crystal ingot, the pull-up conditions of the silicon single crystal ingot are controlled so that the boron concentration Y (atoms/cm.sup.3) and an initial oxygen concentration X (10.sup.17 atoms/cm.sup.3) satisfy the expression X4.310.sup.19Y+16.3.

A silicon single crystal manufacturing method by a Czochralski method pulls up a silicon single crystal from a silicon melt in a quartz crucible while applying a magnetic field to the silicon melt. During a pull-up process of the silicon single crystal, the surface temperature of the silicon melt is continuously measured, and crystal growth conditions are changed based on a result of frequency analysis of the surface temperature.

A silicon single crystal manufacturing method by a Czochralski method pulls up a silicon single crystal from a silicon melt in a quartz crucible while applying a magnetic field to the silicon melt. During a pull-up process of the silicon single crystal, the surface temperature of the silicon melt is continuously measured, and crystal growth conditions are changed based on a result of frequency analysis of the surface temperature.

Single crystal semiconductor wafers comprise oxygen and an n-type dopant, and are produced by a process comprising providing a silicon melt containing n-type dopant in a quartz crucible, the melt having an initial height hM; heating the melt from the side by selectively supplying heat to an upper volume of the melt having an initial height hm, wherein hm is smaller than hM; pulling a single crystal of silicon from the melt by the CZ method with a pulling velocity V; heating the melt from above in the region of a phase boundary between the growing single crystal and the melt; heating the melt from above in the region of a surface of the melt; subjecting the melt to a magnetic field; counterdoping the melt with p-type dopant; and
separating the semiconductor wafer of single-crystal silicon from the single crystal. An apparatus for accomplishing the process is also disclosed.

The present disclosure provides an open Czochralski furnace for single crystal growth. The crystal growth apparatus may include a furnace chamber which includes a furnace body and a furnace cover. The furnace cover may be mounted on a top of the furnace body. The furnace cover may include a first through hole. The first through hole may be configured to place a temperature field. The crystal growth apparatus in the present disclosure can solve a problem that a traditional vacuum furnace needs to firstly pump a high vacuum and secondly recharge a protecting gas, thereby improving the apparatus safety; simplify the structure of the furnace body such that components that need maintenance and repair can be disassembled quickly, thereby reducing manufacturing and maintenance costs; improve the operation accuracy and stability of the apparatus; and reduce the influence of heat convection on the stability of weighing signals in the open furnace.

The present disclosure provides an open Czochralski furnace for single crystal growth. The crystal growth apparatus may include a furnace chamber which includes a furnace body and a furnace cover. The furnace cover may be mounted on a top of the furnace body. The furnace cover may include a first through hole. The first through hole may be configured to place a temperature field. The crystal growth apparatus in the present disclosure can solve a problem that a traditional vacuum furnace needs to firstly pump a high vacuum and secondly recharge a protecting gas, thereby improving the apparatus safety; simplify the structure of the furnace body such that components that need maintenance and repair can be disassembled quickly, thereby reducing manufacturing and maintenance costs; improve the operation accuracy and stability of the apparatus; and reduce the influence of heat convection on the stability of weighing signals in the open furnace.

A method for producing a silicon ingot includes withdrawing a seed crystal from a melt that includes melted silicon in a crucible that is enclosed in a vacuum chamber containing a cusped magnetic field. At least one process parameter is regulated in at least two stages, including a first stage corresponding to formation of the silicon ingot up to an intermediate ingot length, and a second stage corresponding to formation of the silicon ingot from the intermediate ingot length to the total ingot length. During the second stage process parameter regulation may include reducing a crystal rotation rate, reducing a crucible rotation rate, and/or increasing a magnetic field strength relative to the first stage.

A method for producing a silicon ingot includes withdrawing a seed crystal from a melt that includes melted silicon in a crucible that is enclosed in a vacuum chamber containing a cusped magnetic field. At least one process parameter is regulated in at least two stages, including a first stage corresponding to formation of the silicon ingot up to an intermediate ingot length, and a second stage corresponding to formation of the silicon ingot from the intermediate ingot length to the total ingot length. During the second stage process parameter regulation may include reducing a crystal rotation rate, reducing a crucible rotation rate, and/or increasing a magnetic field strength relative to the first stage.

The diameter (d.sub.K) of a cylindrical section and of an end cone of a single crystal being pulled from a melt in a crucible, is determined by measuring the diameter (d.sub.K) of the single crystal at an interface with the melt while taking into account a lowering rate (v.sub.s) of a surface of the melt relative to the crucible, a lifting rate (v.sub.K) with which the crystal is raised relative to the crucible, and a conservation of mass, wherein a diameter of a cylindrical section of the single crystal, determined by means of observing a bright ring on the surface of the melt, and is used for a correction, a plausibility check or a comparison of the diameter (d.sub.K) of the single crystal.

The diameter (d.sub.K) of a cylindrical section and of an end cone of a single crystal being pulled from a melt in a crucible, is determined by measuring the diameter (d.sub.K) of the single crystal at an interface with the melt while taking into account a lowering rate (v.sub.s) of a surface of the melt relative to the crucible, a lifting rate (v.sub.K) with which the crystal is raised relative to the crucible, and a conservation of mass, wherein a diameter of a cylindrical section of the single crystal, determined by means of observing a bright ring on the surface of the melt, and is used for a correction, a plausibility check or a comparison of the diameter (d.sub.K) of the single crystal.