The invention relates to a silicon wafer having a radial variation of oxygen concentration of less than 7%, determined over the entire radius of the silicon wafer. The wafers are produced in the P.sub.V region with rotation of crystal and crucible in the same direction, and in the presence of a horizontal magnetic field of defined intensity.

An embodiment provides a silicon supply part including: a silicon supply chamber; a holder provided on an inner wall of a lower region of the silicon supply chamber; a tube elevating vertically by a first cable inside the silicon supply chamber; a guide provided outside the tube and overlapped with the holder vertically; and a stopper elevating vertically by a second cable and inserted into a lower portion of the tube to open and close the lower portion of the tube.

An embodiment provides a silicon supply part including: a silicon supply chamber; a holder provided on an inner wall of a lower region of the silicon supply chamber; a tube elevating vertically by a first cable inside the silicon supply chamber; a guide provided outside the tube and overlapped with the holder vertically; and a stopper elevating vertically by a second cable and inserted into a lower portion of the tube to open and close the lower portion of the tube.

A method for preparing a single crystal silicon ingot and a wafer sliced therefrom are provided. The ingots and wafers comprise nitrogen at a concentration of at least about 11014 atoms/cm3 and/or germanium at a concentration of at least about 11019 atoms/cm3, interstitial oxygen at a concentration of less than about 6 ppma, and a resistivity of at least about 1000 ohm cm.

A phosphor-containing member includes a transparent member, and particles of a single crystal phosphor dispersed in the transparent member. The single crystal phosphor has a composition represented by a compositional formula (Y.sub.1abLu.sub.aCe.sub.b).sub.3+cAl.sub.5cO.sub.12 (where 0a0.9994, 0.0002b0.0067, 0.016c0.315), and Commission International de l'Eclairage (CIE) chromaticity coordinates x, y of an emission spectrum satisfy a relationship of 0.4377x+0.7384y0.4377x+0.7504 when a peak wavelength of excitation light is 450 nm and temperature is 25 C.

A phosphor-containing member includes a transparent member, and particles of a single crystal phosphor dispersed in the transparent member. The single crystal phosphor has a composition represented by a compositional formula (Y.sub.1abLu.sub.aCe.sub.b).sub.3+cAl.sub.5cO.sub.12 (where 0a0.9994, 0.0002b0.0067, 0.016c0.315), and Commission International de l'Eclairage (CIE) chromaticity coordinates x, y of an emission spectrum satisfy a relationship of 0.4377x+0.7384y0.4377x+0.7504 when a peak wavelength of excitation light is 450 nm and temperature is 25 C.

A silicon single crystal manufacturing method by a Czochralski method pulls up a silicon single crystal from a silicon melt in a quartz crucible while applying a magnetic field to the silicon melt. During a pull-up process of the silicon single crystal, the surface temperature of the silicon melt is continuously measured, and crystal growth conditions are changed based on a result of frequency analysis of the surface temperature.

A silicon single crystal manufacturing method by a Czochralski method pulls up a silicon single crystal from a silicon melt in a quartz crucible while applying a magnetic field to the silicon melt. During a pull-up process of the silicon single crystal, the surface temperature of the silicon melt is continuously measured, and crystal growth conditions are changed based on a result of frequency analysis of the surface temperature.

A single-crystal ingot growing method includes setting a location of an MGP (maximum gauss position) of a magnetic field such that the MGP is located above the surface of a melt, setting a difference in intensity of the magnetic field between a center point of the melt and an edge point of the melt based on the set location of the MGP, setting an intensity of the magnetic field that is applied to the melt based on the set difference in intensity of the magnetic field, and growing a single-crystal ingot based on the set location of the MGP and the set intensity of the magnetic field. The magnetic field is a horizontal magnetic field, the MGP is spaced apart from the surface of the melt by a distance ranging from +50 mm to +150 mm, and the difference in intensity of the magnetic field ranges from 420G to 500G.

A method for producing a silicon ingot by the horizontal magnetic field Czochralski method includes rotating a crucible containing a silicon melt, applying a horizontal magnetic field to the crucible, contacting the silicon melt with a seed crystal, and withdrawing the seed crystal from the silicon melt while rotating the crucible to form a silicon ingot. The crucible has a wettable surface with a cristobalite layer formed thereon.