An apparatus for controlling heat flow within a melt. The apparatus may include a crucible configured to contain the melt where the melt has an exposed surface. The apparatus may also include a heater disposed below a first side of the crucible and configured to supply heat through the melt to the exposed surface, and a heat diffusion barrier assembly comprising at least one heat diffusion barrier disposed within the crucible and defining an isolation region in the melt and an outer region in the melt.

The present invention relates to a powder for growing a gallium oxide single crystal and a method of manufacturing the same, and the powder for growing a gallium oxide single crystal according to an embodiment of the present invention is made of gallium oxide and has a bulk density of 0.7 g/cm.sup.3 or more and 1.0 g/cm.sup.3 or less.

The present application provides a growth method for single crystals of magnesia-alumina spinel by an edge-defined film-fed growth technique, comprising: putting seed crystals and crystal growth raw materials into a crystal growth furnace; vacuuming the crystal growth furnace, filling with inert gas, heating and melting the crystal growth raw materials; making the seed crystals contact a top end of a seam of a mold, pulling the seed crystals, shouldering, making crystals grow, and annealing to cool down after crystal growth. An upper heat shield and a lower heat shield are arranged above the mold, and a cross section of a slit between the heat shields is a curved surface. The cross section of the slit between the heat shields is controlled as a curved surface, so that the present application achieves the effect of uniform heating of the single crystals of magnesia-alumina spinel in an upward pulling process.

The present application provides a growth method for single crystals of magnesia-alumina spinel by an edge-defined film-fed growth technique, comprising: putting seed crystals and crystal growth raw materials into a crystal growth furnace; vacuuming the crystal growth furnace, filling with inert gas, heating and melting the crystal growth raw materials; making the seed crystals contact a top end of a seam of a mold, pulling the seed crystals, shouldering, making crystals grow, and annealing to cool down after crystal growth. An upper heat shield and a lower heat shield are arranged above the mold, and a cross section of a slit between the heat shields is a curved surface. The cross section of the slit between the heat shields is controlled as a curved surface, so that the present application achieves the effect of uniform heating of the single crystals of magnesia-alumina spinel in an upward pulling process.

A high resistance gallium oxide quality prediction method based on deep learning and an edge-defined film-fed crystal growth method, a preparation method and a system; the quality prediction method includes the following steps: obtaining preparation data of a high resistance gallium oxide single crystal prepared by the edge-defined film-fed crystal growth method, the preparation data including seed crystal data, environment data and control data, and the control data including doping element concentration and doping element type; preprocessing the preparation data to obtain preprocessed preparation data; inputting the preprocessing preparation data into a trained neural network model, acquiring the predicted quality data corresponding to the high resistance gallium oxide single crystal through the trained neural network model, the predicted quality data including predicted resistivity.

A high resistance gallium oxide quality prediction method based on deep learning and an edge-defined film-fed crystal growth method, a preparation method and a system; the quality prediction method includes the following steps: obtaining preparation data of a high resistance gallium oxide single crystal prepared by the edge-defined film-fed crystal growth method, the preparation data including seed crystal data, environment data and control data, and the control data including doping element concentration and doping element type; preprocessing the preparation data to obtain preprocessed preparation data; inputting the preprocessing preparation data into a trained neural network model, acquiring the predicted quality data corresponding to the high resistance gallium oxide single crystal through the trained neural network model, the predicted quality data including predicted resistivity.

A substrate structure is provided for use in a superconductive device. The substrate structure has at least one of its two opposite surfaces configured for carrying at least one superconductive structure thereon. The substrate structure comprises a substrate made of a dielectric material composition and having a tape-like shape of a predetermined geometry characterized by a width-thickness aspect ratio of at least 10 and global planarity of said at least one surface defined by a surface roughness on a nanometric scale substantially not exceeding 1 nm rms.

A substrate structure is provided for use in a superconductive device. The substrate structure has at least one of its two opposite surfaces configured for carrying at least one superconductive structure thereon. The substrate structure comprises a substrate made of a dielectric material composition and having a tape-like shape of a predetermined geometry characterized by a width-thickness aspect ratio of at least 10 and global planarity of said at least one surface defined by a surface roughness on a nanometric scale substantially not exceeding 1 nm rms.

A semiconductor element includes a base substrate that includes a Ga.sub.2O.sub.3-based crystal having a thickness of not less than 0.05 m and not more than 50 m, and an epitaxial layer that includes a Ga.sub.2O.sub.3-based crystal and is epitaxially grown on the base substrate. A semiconductor element includes an epitaxial layer that includes a Ga.sub.2O.sub.3-based crystal including an n-type dopant, an ion implanted layer that is formed on a surface of the epitaxial layer and includes a higher concentration of n-type dopant than the epitaxial layer, an anode electrode connected to the epitaxial layer, and a cathode electrode connected to the ion implanted layer.

A semiconductor element includes a base substrate that includes a Ga.sub.2O.sub.3-based crystal having a thickness of not less than 0.05 m and not more than 50 m, and an epitaxial layer that includes a Ga.sub.2O.sub.3-based crystal and is epitaxially grown on the base substrate. A semiconductor element includes an epitaxial layer that includes a Ga.sub.2O.sub.3-based crystal including an n-type dopant, an ion implanted layer that is formed on a surface of the epitaxial layer and includes a higher concentration of n-type dopant than the epitaxial layer, an anode electrode connected to the epitaxial layer, and a cathode electrode connected to the ion implanted layer.