Patent classifications
C30B19/08
SYSTEMS AND METHODS FOR ADDITIVE MANUFACTURING AND REPAIR OF METAL COMPONENTS
Scanning Laser Epitaxy (SLE) is a layer-by-layer additive manufacturing process that allows for the fabrication of three-dimensional objects with specified microstructure through the controlled melting and re-solidification of a metal powders placed atop a base substrate. SLE can be used to repair single crystal (SX) turbine airfoils, for example, as well as the manufacture functionally graded turbine components. The SLE process is capable of creating equiaxed, directionally solidified, and SX structures. Real-time feedback control schemes based upon an offline model can be used both to create specified defect free microstructures and to improve the repeatability of the process. Control schemes can be used based upon temperature data feedback provided at high frame rate by a thermal imaging camera as well as a melt-pool viewing video microscope. A real-time control scheme can deliver the capability of creating engine ready net shape turbine components from raw powder material.
Graphene pattern and process of preparing the same
Provided are a graphene pattern and a process of preparing the same. Graphene is patterned in a predetermined shape on a substrate to form the graphene pattern. The graphene pattern can be formed by forming a graphitizing catalyst pattern on a substrate, contacting a carbonaceous material with the graphitizing catalyst and heat-treating the resultant.
Graphene pattern and process of preparing the same
Provided are a graphene pattern and a process of preparing the same. Graphene is patterned in a predetermined shape on a substrate to form the graphene pattern. The graphene pattern can be formed by forming a graphitizing catalyst pattern on a substrate, contacting a carbonaceous material with the graphitizing catalyst and heat-treating the resultant.
SYSTEM AND METHOD FOR SINGLE CRYSTAL GROWTH WITH ADDITIVE MANUFACTURING
Present embodiments include an additive manufacturing tool configured to receive a metallic material and to supply a plurality of droplets to a part at a work region of the part, wherein each droplet of the plurality of droplets comprises the metallic material and a heating system comprising a primary laser system configured to generate a primary laser beam to heat a molten zone of a substrate of the part and a secondary laser system configured to generate a secondary laser beam to heat a transition zone of the substrate of the part, wherein the molten zone and the work region are colocated, and wherein the transition zone is disposed about the molten zone.
SYSTEM AND METHOD FOR SINGLE CRYSTAL GROWTH WITH ADDITIVE MANUFACTURING
Present embodiments include an additive manufacturing tool configured to receive a metallic material and to supply a plurality of droplets to a part at a work region of the part, wherein each droplet of the plurality of droplets comprises the metallic material and a heating system comprising a primary laser system configured to generate a primary laser beam to heat a molten zone of a substrate of the part and a secondary laser system configured to generate a secondary laser beam to heat a transition zone of the substrate of the part, wherein the molten zone and the work region are colocated, and wherein the transition zone is disposed about the molten zone.
CRYSTAL PREPARATION APPARATUS AND CRYSTAL PREPARATION METHOD
A crystal preparation apparatus (100) and a crystal preparation method (700). The crystal preparation apparatus (100) comprises: a growth cavity (110), the growth cavity (110) being internally provided with at least one layer of plate assembly (111); and a heating assembly (120), used for heating the growth cavity (110). The crystal preparation method (700) comprises: placing a raw material in the growth cavity (110) (710), the growth cavity (110) being internally provided with at least one layer of plate assembly (111); heating the growth cavity (110) by means of the heating assembly (120) so as to melt the raw material into a melt (720); bonding a seed crystal (180) to a seed crystal holder (150) (730); lowering the seed crystal holder (150) to which the seed crystal (180) is bonded, so that the seed crystal (180) is in contact with the melt; and preparing a crystal on the basis of the seed crystal (180) and the melt (750).
CRYSTAL PREPARATION APPARATUS AND CRYSTAL PREPARATION METHOD
A crystal preparation apparatus (100) and a crystal preparation method (700). The crystal preparation apparatus (100) comprises: a growth cavity (110), the growth cavity (110) being internally provided with at least one layer of plate assembly (111); and a heating assembly (120), used for heating the growth cavity (110). The crystal preparation method (700) comprises: placing a raw material in the growth cavity (110) (710), the growth cavity (110) being internally provided with at least one layer of plate assembly (111); heating the growth cavity (110) by means of the heating assembly (120) so as to melt the raw material into a melt (720); bonding a seed crystal (180) to a seed crystal holder (150) (730); lowering the seed crystal holder (150) to which the seed crystal (180) is bonded, so that the seed crystal (180) is in contact with the melt; and preparing a crystal on the basis of the seed crystal (180) and the melt (750).
SYNTHESIS AND PROCESSING OF NOVEL PHASE OF CARBON (Q-CARBON)
Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite.
SYNTHESIS AND PROCESSING OF PURE AND NV NANODIAMONDS AND OTHER NANOSTRUCTURES
Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite.
SYNTHESIS AND PROCESSING OF Q-CARBON, GRAPHENE, AND DIAMOND
Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite.