A method of forming an oxide film is provided. The method may include: supplying mist of a solution including a material of the oxide film dissolved therein to a surface of a substrate while heating the substrate at a first temperature so as to epitaxially grow the oxide film on the surface; and bringing the oxide film into contact with a fluid comprising oxygen atoms while heating the oxide film at a second temperature higher than the first temperature after the epitaxial growth of the oxide film.

A method for producing a Group III nitride semiconductor includes feeding a nitrogen-containing gas into a molten mixture of a Group III metal and a flux placed in a furnace, to thereby grow a Group III nitride semiconductor on a seed substrate, wherein the Group III nitride semiconductor is grown on the seed substrate, while controlling the surface modification weight ratio, which is defined as the ratio of the weight of Na including a portion surface-modified through oxidation or hydroxidation to the weight of Na when the surface thereof has no surface-modified portion as a reference weight, with Na serving as the flux.

In a crystal growth furnace having an array of vertically arranged heaters to provide controlled heating zones within a chamber, and a crucible for holding crystal material, wherein the crystal is grown vertically through the heating zones, the improvement includes a laser mounted outside the chamber which radiates a beam of energy to locally melt precipitates and inclusions. The furnace includes a mechanism to position the laser vertically to, at or near the interface between the formed crystal and crystal melt material above the formed crystal. The crystal material can be CdZnTe.

In a crystal growth furnace having an array of vertically arranged heaters to provide controlled heating zones within a chamber, and a crucible for holding crystal material, wherein the crystal is grown vertically through the heating zones, the improvement includes a laser mounted outside the chamber which radiates a beam of energy to locally melt precipitates and inclusions. The furnace includes a mechanism to position the laser vertically to, at or near the interface between the formed crystal and crystal melt material above the formed crystal. The crystal material can be CdZnTe.

A semiconductor device is provided. The semiconductor device includes a template layer disposed over a substrate and having a trench therein, a buffer structure disposed over a bottom surface of the trench and comprising a metal oxide, a single crystal semiconductor structure disposed within the trench and over the buffer structure and a gate structure disposed over a channel region of the single crystal semiconductor structure.

A method of manufacturing a group-III nitride crystal includes: a seed crystal preparation step of preparing a plurality of dot-shaped group-III nitrides on a substrate as a plurality of seed crystals for growth of a group-III nitride crystal; and a crystal growth step of bringing surfaces of the seed crystals into contact with a melt containing an alkali metal and at least one group-III element selected from gallium, aluminum, and indium in an atmosphere containing nitrogen and thereby reacting the group-III element with the nitrogen in the melt to grow the group-III nitride crystal.

A semiconductor device is provided. The semiconductor device includes a template layer disposed over a substrate and having a trench therein, a buffer structure disposed over a bottom surface of the trench and comprising a metal oxide, a single crystal semiconductor structure disposed within the trench and over the buffer structure and a gate structure disposed over a channel region of the single crystal semiconductor structure.

A device for fabricating a crystalline conversion layer from a growth solution, has a first wall and a substrate defining between them a crystalline growth cavity; a device for inlet/outlet of the solution controlling, over time, at least the supply or extraction of the growth solution to and from the crystalline growth cavity; a heating device creating a temperature profile in the crystalline growth cavity, the substrate or the first wall; the temperature profile controlling a free formation of the crystalline conversion layer over a thickness of greater than 1 micrometer, in a direction mainly transverse to forming face; the whole of the thickness of the crystalline conversion layer being obtained by the free formation of the crystalline conversion layer.

A device for fabricating a crystalline conversion layer from a growth solution, has a first wall and a substrate defining between them a crystalline growth cavity; a device for inlet/outlet of the solution controlling, over time, at least the supply or extraction of the growth solution to and from the crystalline growth cavity; a heating device creating a temperature profile in the crystalline growth cavity, the substrate or the first wall; the temperature profile controlling a free formation of the crystalline conversion layer over a thickness of greater than 1 micrometer, in a direction mainly transverse to forming face; the whole of the thickness of the crystalline conversion layer being obtained by the free formation of the crystalline conversion layer.

A method of forming single crystal perovskite according to an exemplary embodiment of the present invention includes: forming a preliminary thin film by applying a perovskite precursor solution containing an additive on a substrate; exposing the preliminary thin film to a vacuum state by transferring the preliminary thin film to a vacuum chamber; and switching an internal pressure of the vacuum chamber to an atmospheric pressure, wherein the additive includes a substituted or unsubstituted C1 to C30 aliphatic ammonium salt, a substituted or unsubstituted C6 to C30 aromatic ammonium salt, a substituted or unsubstituted C1 to C30 aliphatic amine salt, a substituted or unsubstituted C6 to C30 aromatic amine salt, or a combination thereof.