A device for growing large-sized monocrystalline crystals, including a crucible adapted to grow crystals from a material source and with a seed crystal and including therein a seed crystal region, a growth chamber, and a material source region; a thermally insulating material disposed outside the crucible and below a heat dissipation component; and a plurality of heating components disposed outside the thermally insulating material to provide heat sources, wherein the heat dissipation component is of a heat dissipation inner diameter and a heat dissipation height which exceeds a thickness of the thermally insulating material.

A semi-insulating silicon carbide monocrystal and a method of growing the same are disclosed. The semi-insulating silicon carbide monocrystal comprises intrinsic impurities, deep energy level dopants and intrinsic point defects. The intrinsic impurities are introduced unintentionally during manufacture of the silicon carbide monocrystal, and the deep energy level dopants and the intrinsic point defects are doped or introduced intentionally to compensate for the intrinsic impurities. The intrinsic impurities include shallow energy level donor impurities and shallow energy level acceptor impurities. A sum of a concentration of the deep energy level dopants and a concentration of the intrinsic point defects is greater than a difference between a concentration of the shallow energy level donor impurities and a concentration of the shallow energy level acceptor impurities, and the concentration of the intrinsic point defects is less than the concentration of the deep energy level dopants. The semi-insulating SiC monocrystal has resistivity greater than 110.sup.5 .Math.cm at room temperature, and its electrical performances and crystal quality satisfy requirements for manufacture of microwave devices. The deep energy level dopants and the intrinsic point defects jointly serve to compensate the intrinsic impurities, so as to obtain a high quality semi-insulating single crystal.

Embodiments of the present disclosure generally relate to apparatus, systems, and methods for in-situ film growth rate monitoring. A thickness of a film on a substrate is monitored during a substrate processing operation that deposits the film on the substrate. The thickness is monitored while the substrate processing operation is conducted. The monitoring includes directing light in a direction toward a crystalline coupon. The direction is perpendicular to a heating direction. In one implementation, a reflectometer system to monitor film growth during substrate processing operations includes a first block that includes a first inner surface. The reflectometer system includes a light emitter disposed in the first block and oriented toward the first inner surface, and a light receiver disposed in the first block and oriented toward the first inner surface. The reflectometer system includes a second block opposing the first block.

Provided herein is a laser processing system integrated with an MBE device, including an MBE growth chamber, a sample table, an optical path mechanism, a heat insulation mechanism, and a cooling mechanism. An opening is formed in a side of the MBE growth chamber. The sample table is fixed in the MBE growth chamber, corresponds to a position of the opening, and is used for placing a substrate sample material. The optical path mechanism is relatively arranged on a side of the MBE growth chamber, and the optical path mechanism is provided with a light-emitting end. A side of the light-emitting end penetrates through the opening of the MBE growth chamber, extends into the MBE growth chamber, and is spaced apart from the sample table. The optical path mechanism is sealedly connected to the opening of the MBE growth chamber. By integrating the optical path mechanism within the MBE device and utilizing direct laser writing, the system facilitates close-range processing of the sample, enhancing the laser's focusing capability and effectively ensuring the precision and quality of laser processing.

In various embodiments, aluminum nitride single crystals are rapidly diameter-expanded during growth and have large crystal augmentation parameters. The aluminum nitride single crystals advantageously have low densities of basal plane dislocations and large substrate versatility metrics.

An object of the present invention is to provide a novel technique for uniformizing a carrier concentration of an epitaxial layer.

The present invention is a method for uniformizing the carrier concentration of an epitaxial layer, the method including a growth step S10 of growing the epitaxial layer 20 under an equilibrium vapor pressure environment on the bulk layer 10. As described above, including the growth step S10 of growing the epitaxial layer 20 under an equilibrium vapor pressure environment can suppress the variation in the carrier concentration in the epitaxial layer 20.

An 8 inch n-type SiC single crystal substrate of an embodiment has a diameter in the range of 195 to 205 mm, a thickness in the range of 300 m to 650 m, thicknesses of work-affected layers on both the front and back sides are 0.1 nm or less, and the dopant concentration is 210.sup.18/cm.sup.3 or more and 610.sup.19/cm.sup.3 or less at least five arbitrarily selected points in the plane within 5% of the thickness of the substrate in the depth direction from the main surface of the substrate.

A silicon carbide wafer and a method of fabricating the same are provided. In the silicon carbide wafer, a ratio (V:N) of a vanadium concentration to a nitrogen concentration is in a range of 2:1 to 10:1, and a portion of the silicon carbide wafer having a resistivity greater than 10.sup.12 .Math.cm accounts for more than 85% of an entire wafer area of the silicon carbide wafer.

Provided are a silicon carbide crystal growth device and a quality control method. The device includes: an annealing unit, a crystal growth unit, an atmosphere control unit, and a transport system; the atmosphere control unit provides a gas environment with low water, oxygen and nitrogen; the transport system transports a plurality of target objects after high-temperature purification by the annealing unit to the atmosphere control unit; after assembling silicon carbide seed crystal and silicon carbide powder in a graphite crucible and covering with thermal insulation material to form a container inside the atmosphere control unit, the transport system transports the container to the crystal growth unit. The method uses a weighing system in a chamber of the crystal growth unit to detect a weight change of silicon carbide seed crystal and silicon carbide powder during a crystal growth process through a plurality of weight sensors of the weighing system.

A PVT method is utilized for production of single crystals in an apparatus, which comprises a growth cell, a process chamber in which the growth cell is located and a heating device surrounding the process chamber for heating the growth cell. In this method, a source material and a seed are introduced into the growth cell, and the process chamber is filled with a process gas and the growth cell is heated, causing the source material to sublimated and resublimated at the seed. An apparatus designed for production of single crystals using the PVT method includes a highly heatable growth cell for accommodation of a source material and a seed, a process chamber accommodating the growth cell with a connection to a process gas source for filling it with a process gas, and a heating device for heating the growth cell.