A method includes providing a p-type S/D epitaxial feature and an n-type source/drain (S/D) epitaxial feature, forming a semiconductor material layer over the n-type S/D epitaxial feature and the p-type S/D epitaxial feature, processing the semiconductor material layer with a germanium-containing gas, where the processing of the semiconductor material layer forms a germanium-containing layer over the semiconductor material layer, etching the germanium-containing layer, where the etching of the germanium-containing layer removes the germanium-containing layer formed over the n-type S/D epitaxial feature and the semiconductor material layer formed over the p-type S/D epitaxial feature, and forming a first S/D contact over the semiconductor material layer remaining over the n-type S/D epitaxial feature and a second S/D contact over the p-type S/D epitaxial feature. The semiconductor material layer may have a composition similar to that of the n-type S/D epitaxial feature.

A method includes providing a p-type S/D epitaxial feature and an n-type source/drain (S/D) epitaxial feature, forming a semiconductor material layer over the n-type S/D epitaxial feature and the p-type S/D epitaxial feature, processing the semiconductor material layer with a germanium-containing gas, where the processing of the semiconductor material layer forms a germanium-containing layer over the semiconductor material layer, etching the germanium-containing layer, where the etching of the germanium-containing layer removes the germanium-containing layer formed over the n-type S/D epitaxial feature and the semiconductor material layer formed over the p-type S/D epitaxial feature, and forming a first S/D contact over the semiconductor material layer remaining over the n-type S/D epitaxial feature and a second S/D contact over the p-type S/D epitaxial feature. The semiconductor material layer may have a composition similar to that of the n-type S/D epitaxial feature.

A doped SiOC liquid starting material provides a p-type polymer derived ceramic SiC crystalline materials, including boules and wafers. P-type SiC electronic devices. Low resistivity SiC crystals, wafers and boules, having phosphorous as a dopant. Polymer derived ceramic doped SiC shaped charge source materials for vapor deposition growth of doped SiC crystals.

A window assembly heat transfer system is disclosed in which a window member has a selected transparency to monitored or sensed light wavelengths. One or more passages are provided in the window member for flowing a single-phase or two-phase heat transfer fluid, the passages being optically non-transparent to the monitored or sensed light wavelengths. A mechanism allows either evaporation or condensation of the fluid and/or balancing of a flow of the fluid within the passages. In one embodiment, the window assembly can be made by producing passages in a top surface of a first single plate, optionally producing passages in a bottom surface of a second single plate and bonding the top surface of the first plate to a bottom surface of a second single plate to form the window member with the passage or passages. In another embodiment, the window assembly can be made by providing a core around which the window member material is grown and thereafter removing the core to produce the passage or passages.

A window assembly heat transfer system is disclosed in which a window member has a selected transparency to monitored or sensed light wavelengths. One or more passages are provided in the window member for flowing a single-phase or two-phase heat transfer fluid, the passages being optically non-transparent to the monitored or sensed light wavelengths. A mechanism allows either evaporation or condensation of the fluid and/or balancing of a flow of the fluid within the passages. In one embodiment, the window assembly can be made by producing passages in a top surface of a first single plate, optionally producing passages in a bottom surface of a second single plate and bonding the top surface of the first plate to a bottom surface of a second single plate to form the window member with the passage or passages. In another embodiment, the window assembly can be made by providing a core around which the window member material is grown and thereafter removing the core to produce the passage or passages.

Embodiments of mechanisms for processing a semiconductor wafer are provided. A method for processing a wafer includes providing a wafer process apparatus. The wafer process apparatus includes a chamber and a stage positioned in the chamber for supporting the semiconductor wafer. The method also includes supplying a process gas to the semiconductor wafer via a discharged assembly that is adjacent to the stage. The discharged assembly includes a discharged passage configured without a vertical flow path section.

A single-crystal diamond material has a transmittance of light with a wavelength of greater than or equal to 410 nm and less than or equal to 750 nm of less than or equal to 15% for any wavelength, and is at least either of an electrical insulator according to optical evaluation and an electrical insulator according to electrical evaluation. A criterion of the optical evaluation can be a transmittance of light with a wavelength of 10.6 μm of greater than or equal to 1%. A criterion of the electrical evaluation can be an average resistivity of greater than or equal to 1×10.sup.6 Ωcm. Accordingly, a single-crystal diamond material having a low transmittance of light in the entire region of the visible light region and exhibiting a black color is provided.

A single-crystal diamond material has a transmittance of light with a wavelength of greater than or equal to 410 nm and less than or equal to 750 nm of less than or equal to 15% for any wavelength, and is at least either of an electrical insulator according to optical evaluation and an electrical insulator according to electrical evaluation. A criterion of the optical evaluation can be a transmittance of light with a wavelength of 10.6 μm of greater than or equal to 1%. A criterion of the electrical evaluation can be an average resistivity of greater than or equal to 1×10.sup.6 Ωcm. Accordingly, a single-crystal diamond material having a low transmittance of light in the entire region of the visible light region and exhibiting a black color is provided.

A high-quality nitride crystal substrate is manufactured, using a substrate for crystal growth with its diameter enlarged, the nitride crystal substrate including: a first step of preparing a substrate for crystal growth having a plurality of seed crystal substrates made of nitride crystals, arranged in a planar appearance, so that their main surfaces are parallel to each other and their lateral surfaces are in contact with each other, and a difference of a lattice constant between adjacent seed crystal substrates arbitrarily selected from a plurality of the seed crystal substrates is within 7×10.sup.−5 Å; and a second step of growing a crystal film on a ground surface belonging to the substrate for crystal growth.

A high-quality nitride crystal substrate is manufactured, using a substrate for crystal growth with its diameter enlarged, the nitride crystal substrate including: a first step of preparing a substrate for crystal growth having a plurality of seed crystal substrates made of nitride crystals, arranged in a planar appearance, so that their main surfaces are parallel to each other and their lateral surfaces are in contact with each other, and a difference of a lattice constant between adjacent seed crystal substrates arbitrarily selected from a plurality of the seed crystal substrates is within 7×10.sup.−5 Å; and a second step of growing a crystal film on a ground surface belonging to the substrate for crystal growth.