An apparatus for forming a crystalline ribbon grown on a surface of a melt includes an inner chamber. A crucible in the inner chamber is configured to hold a melt. A cold initializer in the inner chamber faces an exposed surface of the melt. A process gas feed is in fluid communication with a process gas inlet of the inner chamber. An outer chamber surrounds at least part of the inner chamber and defines an opening for the process gas feed and a sump inlet. A sump gas feed is in fluid communication with the sump inlet. The sump gas feed is configured to deliver a sump gas to the sump region. The sump region also can include heaters and insulation.

An apparatus for forming a crystalline ribbon grown on a surface of a melt includes an inner chamber. A crucible in the inner chamber is configured to hold a melt. A cold initializer in the inner chamber faces an exposed surface of the melt. A process gas feed is in fluid communication with a process gas inlet of the inner chamber. An outer chamber surrounds at least part of the inner chamber and defines an opening for the process gas feed and a sump inlet. A sump gas feed is in fluid communication with the sump inlet. The sump gas feed is configured to deliver a sump gas to the sump region. The sump region also can include heaters and insulation.

The present invention relates to a single crystal ingot growing apparatus capable of precisely controlling an Ox volatilization on a silicon melt solution surface by uniformly forming a flow velocity of an inert gas flowing along the silicon melt solution surface. The present invention provides a single crystal ingot growing apparatus, including: a crucible containing a silicon melt solution; a heat shielding member mounted to hang above the crucible and cooling a single crystal ingot grown from the silicon melt solution of the crucible; a first flow path formed between an outer circumferential surface of the single crystal ingot and an inner circumferential surface of the heat shielding member, in which an inert gas is vertically moved downward; and a second flow path formed between a lower end of the heat shielding member and an upper surface of the silicon melt solution, in which the inert gas is horizontally moved outward, wherein an oxygen concentration in the single crystal is controlled depending on a volume ratio of the second flow path to the first flow path.

Production of silicon ingots in a crystal puller that involve reduction in the formation of silicon deposits on the puller exhaust system are disclosed.

Production of silicon ingots in a crystal puller that involve reduction in the formation of silicon deposits on the puller exhaust system are disclosed.

In this photoelectric conversion element wherein group III-IV compound semiconductor single crystals containing zinc as an impurity are used as a substrate, the substrate is increased in size without lowering conversion efficiency. A heat-resistant crucible is filled with raw material and a sealant, and the raw material and sealant are heated, thereby melting the raw material into a melt, softening the encapsulant, and covering the melt from the top with the encapsulant. The temperature inside the crucible is controlled such that the temperature of the top of the encapsulant relative to the bottom of the encapsulant becomes higher in a range that not equal or exceed the temperature of bottom of the encapsulant, and seed crystal is dipped in the melt and pulled upward with respect to the melt, thereby growing single crystals from the seed crystal. Thus, a large compound semiconductor wafer that is at least two inches in diameter and has a low dislocation density of 5,000 cm.sup.2 can be obtained, despite having a low average zinc concentration of 510.sup.17 cm.sup.3 to 310.sup.18 cm.sup.3, at which a crystal hardening effect does not manifest.

In this photoelectric conversion element wherein group III-IV compound semiconductor single crystals containing zinc as an impurity are used as a substrate, the substrate is increased in size without lowering conversion efficiency. A heat-resistant crucible is filled with raw material and a sealant, and the raw material and sealant are heated, thereby melting the raw material into a melt, softening the encapsulant, and covering the melt from the top with the encapsulant. The temperature inside the crucible is controlled such that the temperature of the top of the encapsulant relative to the bottom of the encapsulant becomes higher in a range that not equal or exceed the temperature of bottom of the encapsulant, and seed crystal is dipped in the melt and pulled upward with respect to the melt, thereby growing single crystals from the seed crystal. Thus, a large compound semiconductor wafer that is at least two inches in diameter and has a low dislocation density of 5,000 cm.sup.2 can be obtained, despite having a low average zinc concentration of 510.sup.17 cm.sup.3 to 310.sup.18 cm.sup.3, at which a crystal hardening effect does not manifest.

The present disclosure provides a method for growing scintillation crystals with multi-component garnet structure. According to the method, through weight compensating for reactants, introducing a flowing gas, adopting a new temperature field device, and optimizing process parameters, problems such as component deviation and crystal cracking during the crystal growth can be solved to a certain extent, and grown crystals have consistent performance and good repeatability.

A lanthanum fluoride single crystal wherein an alkaline earth metal is added to the lanthanum fluoride single crystal, and internal transmittance of light at 9.3 m in wavelength is no less than 85%/mm. The lanthanum fluoride single crystal and an optical component which have high transparency in an infrared region, and can be preferably used for phase plates for lasers, lenses and optical window materials for laser beam machines, gas detectors, flame detectors, infrared cameras, and so on, etc. are provided.

There is provided a silicon single crystal producing method in producing a silicon single crystal by the Czochralski method using a pulling apparatus including a heat shield, wherein an oxygen concentration in the crystal is controlled through the adjustment of a flow velocity of inert gas introduced into the apparatus at the gap portion between an exterior surface of the single crystal and a lower-end opening edge of the heat shield, in accordance with a gap-to-crystal-diameter ratio (the area of the gap portion/the area of a cross-sectional of the single crystal). By this producing method, it is possible to appropriately control the oxygen concentration in the pulled single crystal.