There is provided a silicon single crystal producing method in producing a silicon single crystal by the Czochralski method using a pulling apparatus including a heat shield, wherein an oxygen concentration in the crystal is controlled through the adjustment of a flow velocity of inert gas introduced into the apparatus at the gap portion between an exterior surface of the single crystal and a lower-end opening edge of the heat shield, in accordance with a gap-to-crystal-diameter ratio (the area of the gap portion/the area of a cross-sectional of the single crystal). By this producing method, it is possible to appropriately control the oxygen concentration in the pulled single crystal.

One embodiment of the present disclosure provides a scintillation crystal and a method and a device for preparing the scintillation crystal. A molecular formula of the scintillation crystal is: Ce.sub.y:Ca.sub.s:Lu.sub.2(1-xysz)Y.sub.2zSc.sub.2xSiO.sub.5, wherein x=0-1, y=0.0000001-0.06, z=0.00001-0.5, s=0.0000001-0.05.

One embodiment of the present disclosure provides a scintillation crystal and a method and a device for preparing the scintillation crystal. A molecular formula of the scintillation crystal is: Ce.sub.y:Ca.sub.s:Lu.sub.2(1-xysz)Y.sub.2zSc.sub.2xSiO.sub.5, wherein x=0-1, y=0.0000001-0.06, z=0.00001-0.5, s=0.0000001-0.05.

Production of silicon ingots in a crystal puller that involve reduction in the formation of silicon deposits on the puller exhaust system are disclosed.

A system for growing a CdZnTe crystal includes a crucible operable to contain a solid CdZnTe source and a heating element operable to melt an upper surface to the solid CdZnTe source and form a tellurium rich melt floating on the solid CdZnTe source. The crucible is operable to contain an encapsulating layer above the tellurium rich melt. The system also includes a rod operable to mechanically support a CdZnTe seed crystal.

A system for growing a CdZnTe crystal includes a crucible operable to contain a solid CdZnTe source and a heating element operable to melt an upper surface to the solid CdZnTe source and form a tellurium rich melt floating on the solid CdZnTe source. The crucible is operable to contain an encapsulating layer above the tellurium rich melt. The system also includes a rod operable to mechanically support a CdZnTe seed crystal.

A device and method for centrifugally synthesizing and growing a compound crystal, which relate to the field of preparation of compound semiconductors. The device comprises a furnace body and a crucible in the furnace body, wherein a sealing groove is formed in the top of the crucible, a sealing cover matching the sealing groove is provided, and the crucible is connected to a centrifugal electric motor outside the furnace body by means of a crucible rod. The method comprises the steps of placing a raw material, assembling the device, sealing the crucible, performing centrifugal synthesis, and growing a crystal.

A device and method for centrifugally synthesizing and growing a compound crystal, which relate to the field of preparation of compound semiconductors. The device comprises a furnace body and a crucible in the furnace body, wherein a sealing groove is formed in the top of the crucible, a sealing cover matching the sealing groove is provided, and the crucible is connected to a centrifugal electric motor outside the furnace body by means of a crucible rod. The method comprises the steps of placing a raw material, assembling the device, sealing the crucible, performing centrifugal synthesis, and growing a crystal.