The present disclosure generally relates to compositions comprising substrate-free 2D tellurene crystals, and the method of making and using the substrate-free 2D tellurene crystals. The 2D tellurene crystals of the present disclosure are characterized by an X-ray diffraction pattern (CuKα radiation, λ=1.54056 A) comprising a peak at 23.79 (2θ±0.1°) and optionally one or more peaks selected from the group consisting of 41.26, 47.79, 50.41, and 64.43 (2θ±0.1°).

The present disclosure generally relates to compositions comprising substrate-free 2D tellurene crystals, and the method of making and using the substrate-free 2D tellurene crystals. The 2D tellurene crystals of the present disclosure are characterized by an X-ray diffraction pattern (CuKα radiation, λ=1.54056 A) comprising a peak at 23.79 (2θ±0.1°) and optionally one or more peaks selected from the group consisting of 41.26, 47.79, 50.41, and 64.43 (2θ±0.1°).

A large grain quasi-single-crystal film and a manufacturing method thereof are provided. The metal film having the <111> preferred orientation on its surface is subjected to mechanical tensile force to make the arrangement of crystal grains more ordered. The metal film is grown into a film with large crystal grains having an average diameter of over 500 microns by annealing at a temperature below the recrystallization temperature, thereby obtaining a large grain quasi-single-crystal film having the preferred directions of three axes. The large grain quasi-single-crystal film has a <110> preferred orientation along the tensile direction and a <211> preferred orientation along the direction vertical to the tensile force, and maintains a <111> preferred orientation on its top surface. The present invention can be used to produce highly anisotropic large-area quasi-single-crystal films, and can also be applied to grow 2-dimensional materials or develop anisotropic structures.

Embodiments described herein relate generally to the large scale production of functionalized graphene. In some embodiments, a method for producing functionalized graphene includes combining a crystalline graphite with a first electrolyte solution that includes at least one of a metal hydroxide salt, an oxidizer, and a surfactant. The crystalline graphite is then milled in the presence of the first electrolyte solution for a first time period to produce a thinned intermediate material. The thinned intermediate material is combined with a second electrolyte solution that includes a strong oxidizer and at least one of a metal hydroxide salt, a weak oxidizer, and a surfactant. The thinned intermediate material is then milled in the presence of the second electrolyte solution for a second time period to produce functionalized graphene.

Embodiments described herein relate generally to the large scale production of functionalized graphene. In some embodiments, a method for producing functionalized graphene includes combining a crystalline graphite with a first electrolyte solution that includes at least one of a metal hydroxide salt, an oxidizer, and a surfactant. The crystalline graphite is then milled in the presence of the first electrolyte solution for a first time period to produce a thinned intermediate material. The thinned intermediate material is combined with a second electrolyte solution that includes a strong oxidizer and at least one of a metal hydroxide salt, a weak oxidizer, and a surfactant. The thinned intermediate material is then milled in the presence of the second electrolyte solution for a second time period to produce functionalized graphene.

The invention relates to a catalyst system for catalyzing conversion of carbon dioxide into multi-carbon compounds comprising a boron-doped copper catalytic material and associated methods.

The invention relates to a catalyst system for catalyzing conversion of carbon dioxide into multi-carbon compounds comprising a boron-doped copper catalytic material and associated methods.

The presently disclosed subject matter relates generally to GaAs.sub.1−xSb.sub.x nanowires (NW) grown on a graphitic substrate, to methods of growing such nanowires, and to use of such nanowires in applications such as flexible near infrared photodetector.

Disclosed is a technology of permanently phase-transiting a semimetal using ion implantation. More particularly, the permanent phase transition of a dirac semimetal into a weyl semimetal can be induced by implanting non-magnetic material ions into the dirac semimetal according to an embodiment.

The invention relates to two dimensional (2D) heterostructures and methods of fabricating the same. The 2D hetero structures are integration of borophene with graphene and 2D lateral and vertical hetero structures with sharp and rotationally commensurate interfaces. The rich bonding configurations of boron indicate that borophene can be integrated into a diverse range of 2D heterostructures.