It is an object to provide a substrate for epitaxial growth having a metal base material laminated with a copper layer. On a surface of the copper layer, an area occupied by crystal grains having crystal orientations other than a (200) plane present within 3 μm from the surface can be less than 1.5%. A surface roughness along a same direction as a rolling direction per unit length of 60 μm when measured by AFM can be Ra1<10 nm.

It is an object to provide a substrate for epitaxial growth having a metal base material laminated with a copper layer. On a surface of the copper layer, an area occupied by crystal grains having crystal orientations other than a (200) plane present within 3 μm from the surface can be less than 1.5%. A surface roughness along a same direction as a rolling direction per unit length of 60 μm when measured by AFM can be Ra1<10 nm.

Embodiments described are directed to methods for the functionalization of asphaltene materials and to compositions made from functionalized asphaltenes. Disclosed is a method for synthesizing graphene derivatives, such as 2D single crystalline carbon allotropes of graphene and functional materials, such as sulfonic acid and its derivatives. Also disclosed is a method for the transformation of asphaltene into a source of graphene derivatives and functional materials, such as, 0D, 1D, 2D and combinations of 0D and 1D by utilizing chemical substitution reaction mechanism, such as, electrophilic aromatic substitution, nucleophilic aromatic substitution and Sandmeyer mechanism. Also disclosed are novel graphene materials comprising: acetylenic linkage and hydrogenated graphene. These novel materials, which may be produced by these methods, include, e.g.: 2D single crystalline carbon allotropes of graphene with asymmetric unit formulas C.sub.7H.sub.6N.sub.2O.sub.4, C.sub.6H.sub.4N.sub.2O.sub.4, C.sub.7H.sub.7O.sub.3S− H.sub.3O+, C.sub.7H.sub.7O.sub.3SH+, and a 2D single crystal with asymmetric unit formula (Na.sub.6O.sub.16S.sub.4)n.

Embodiments described are directed to methods for the functionalization of asphaltene materials and to compositions made from functionalized asphaltenes. Disclosed is a method for synthesizing graphene derivatives, such as 2D single crystalline carbon allotropes of graphene and functional materials, such as sulfonic acid and its derivatives. Also disclosed is a method for the transformation of asphaltene into a source of graphene derivatives and functional materials, such as, 0D, 1D, 2D and combinations of 0D and 1D by utilizing chemical substitution reaction mechanism, such as, electrophilic aromatic substitution, nucleophilic aromatic substitution and Sandmeyer mechanism. Also disclosed are novel graphene materials comprising: acetylenic linkage and hydrogenated graphene. These novel materials, which may be produced by these methods, include, e.g.: 2D single crystalline carbon allotropes of graphene with asymmetric unit formulas C.sub.7H.sub.6N.sub.2O.sub.4, C.sub.6H.sub.4N.sub.2O.sub.4, C.sub.7H.sub.7O.sub.3S− H.sub.3O+, C.sub.7H.sub.7O.sub.3SH+, and a 2D single crystal with asymmetric unit formula (Na.sub.6O.sub.16S.sub.4)n.

Provided is a preparation method for an ultrahigh-conductivity multilayer single-crystal laminated copper material, where multiple layers of single-crystal copper foils are laminated together to form a laminate, and the laminate is pressurized and annealed as one piece by performing pressurizing and high-temperature annealing at the same time, or the laminate is pressed as one piece by means of direct hot rolling, thereby obtaining an ultrahigh-conductivity multi-layer single-crystal laminated copper material, whereby, according to the method, multiple layers of single-crystal copper foils are used as raw materials, an ultrahigh-conductivity multi-layer single-crystal laminated copper material is prepared by means of hot rolling or pressing and annealing, and the conductivity of the copper material is greater than or equal to 105% IACS.

Provided is a preparation method for an ultrahigh-conductivity multilayer single-crystal laminated copper material, where multiple layers of single-crystal copper foils are laminated together to form a laminate, and the laminate is pressurized and annealed as one piece by performing pressurizing and high-temperature annealing at the same time, or the laminate is pressed as one piece by means of direct hot rolling, thereby obtaining an ultrahigh-conductivity multi-layer single-crystal laminated copper material, whereby, according to the method, multiple layers of single-crystal copper foils are used as raw materials, an ultrahigh-conductivity multi-layer single-crystal laminated copper material is prepared by means of hot rolling or pressing and annealing, and the conductivity of the copper material is greater than or equal to 105% IACS.

A method for the production of a graphene layer structure having from 1 to 100 graphene layers, the method comprising providing a substrate having a thermal resistance equal to or greater than that of sapphire, on a heated susceptor in a reaction chamber, the chamber having a plurality of cooled inlets arranged so that, in use, the inlets are distributed across the substrate and have a constant separation from the substrate, supplying a flow comprising a precursor compound through the inlets and into the reaction chamber to thereby decompose the precursor compound and form graphene on the substrate, wherein the inlets are cooled to less than 100° C., preferably 50 to 60° C., and the susceptor is heated to a temperature of at least 50° C. in excess of a decomposition temperature of the precursor, using a laser to selectively ablate graphene from the substrate, wherein the laser has a wavelength in excess of 600 nm and a power of less than 50 Watts.

A method for the production of a graphene layer structure having from 1 to 100 graphene layers, the method comprising providing a substrate having a thermal resistance equal to or greater than that of sapphire, on a heated susceptor in a reaction chamber, the chamber having a plurality of cooled inlets arranged so that, in use, the inlets are distributed across the substrate and have a constant separation from the substrate, supplying a flow comprising a precursor compound through the inlets and into the reaction chamber to thereby decompose the precursor compound and form graphene on the substrate, wherein the inlets are cooled to less than 100° C., preferably 50 to 60° C., and the susceptor is heated to a temperature of at least 50° C. in excess of a decomposition temperature of the precursor, using a laser to selectively ablate graphene from the substrate, wherein the laser has a wavelength in excess of 600 nm and a power of less than 50 Watts.

A method for deposition of a thin film onto a substrate is provided. The method includes providing a source precursor containing on or more of elements constituting the thin film, generating a transient species from the source precursor, and depositing a thin film onto the substrate from the transient species. The transient species being a reactive intermediate that has a limited lifetime in a condensed phase at or above room temperature.

A method for deposition of a thin film onto a substrate is provided. The method includes providing a source precursor containing on or more of elements constituting the thin film, generating a transient species from the source precursor, and depositing a thin film onto the substrate from the transient species. The transient species being a reactive intermediate that has a limited lifetime in a condensed phase at or above room temperature.