Patent classifications
C30B29/10
Magnetic Cesium Adsorbent, Preparation Method Therefor, and Cesium Removal Method Using Same
The present invention relates to a magnetic cesium adsorbent, a preparation method therefor, and a cesium removal method using the same, the preparation method comprising the steps of: (a) preparing a metal hexacyanoferrate; and (b) hydrothermally reacting the metal hexacyanoferrate so as to prepare a metal hexacyanoferrate having a rhombohedral crystal structure.
Nickel cobalt complex hydroxide particles and method for producing the same, positive electrode active material for non-aqueous electrolyte secondary battery and method for producing the same, and non-aqueous electrolyte secondary battery
A method for producing a nickel cobalt complex hydroxide includes first crystallization of supplying a solution containing Ni, Co and Mn, a complex ion forming agent and a basic solution separately and simultaneously to one reaction vessel to obtain nickel cobalt complex hydroxide particles, and a second crystallization of, after the first crystallization, further supplying a solution containing nickel, cobalt, and manganese, a solution of a complex ion forming agent, a basic solution, and a solution containing said element M separately and simultaneously to the reaction vessel to crystallize a complex hydroxide particles containing nickel, cobalt, manganese and said element M on the nickel cobalt complex hydroxide particles crystallizing a complex hydroxide particles comprising Ni, Co, Mn and the element Mon the nickel cobalt complex hydroxide particles.
Nickel cobalt complex hydroxide particles and method for producing the same, positive electrode active material for non-aqueous electrolyte secondary battery and method for producing the same, and non-aqueous electrolyte secondary battery
A method for producing a nickel cobalt complex hydroxide includes first crystallization of supplying a solution containing Ni, Co and Mn, a complex ion forming agent and a basic solution separately and simultaneously to one reaction vessel to obtain nickel cobalt complex hydroxide particles, and a second crystallization of, after the first crystallization, further supplying a solution containing nickel, cobalt, and manganese, a solution of a complex ion forming agent, a basic solution, and a solution containing said element M separately and simultaneously to the reaction vessel to crystallize a complex hydroxide particles containing nickel, cobalt, manganese and said element M on the nickel cobalt complex hydroxide particles crystallizing a complex hydroxide particles comprising Ni, Co, Mn and the element Mon the nickel cobalt complex hydroxide particles.
Passivation of Nonlinear Optical Crystals
A laser system includes a nonlinear optical (NLO) crystal, wherein the NLO crystal is annealed within a selected temperature range. The NLO crystal is passivated with at least one of hydrogen, deuterium, a hydrogen-containing compound or a deuterium-containing compound to a selected passivation level. The system further includes at least one light source, wherein at least one light source is configured to generate light of a selected wavelength and at least one light source is configured to transmit light through the NLO crystal. The system further includes a crystal housing unit configured to house the NLO crystal.
Passivation of Nonlinear Optical Crystals
A laser system includes a nonlinear optical (NLO) crystal, wherein the NLO crystal is annealed within a selected temperature range. The NLO crystal is passivated with at least one of hydrogen, deuterium, a hydrogen-containing compound or a deuterium-containing compound to a selected passivation level. The system further includes at least one light source, wherein at least one light source is configured to generate light of a selected wavelength and at least one light source is configured to transmit light through the NLO crystal. The system further includes a crystal housing unit configured to house the NLO crystal.
PREPARATION METHOD OF PHOSPHOTUNGSTIC ACID
A preparation method of phosphotungstic acid includes mixing a mixed solution containing tungsten, phosphorus and an inorganic acid with an organic-alcohol-containing oil phase for extraction, stripping the obtained supported organic phase and distilled water according to an oil phase:aqueous phase volume ratio of 3:1 to 10:1 to obtain a stripping solution; and carrying out thermal evaporation crystallization or spray drying on the stripping solution to obtain a phosphotungstic acid crystal, wherein the organic alcohol is a C7-C20 alcohol. The inventors have found out that the addition of an inorganic acid to a solution of phosphorus or tungsten and the use of an organic alcohol as an extractant can achieve simultaneous and efficient extraction of phosphotungstic acid. It has also been found that the organic-alcohol-containing oil phase has excellent selectivity for phosphotungstic acid molecules in the mixed solution.
Development of Fluorine-Free Tantalum Carbide Mxene Hybrid Structure as a Biocompatible Material for Supercapacitor Electrodes
A new fluorine-free tantalum carbide MXene-tantalum oxides (TTO) nanostructure was developed as a biocompatible electrode material for size-sensitive applications. The TTO hybrid structure is biocompatible with different types of human cells, and offers excellent volumetric capacitance, energy density, power density, and cyclability when assembled into a symmetric supercapacitor. The TTO offers high promise for future biomedical energy storage devices.
Semiconductor interconnect, electrode for semiconductor device, and method of preparing multielement compound thin film
A semiconductor interconnect and an electrode for semiconductor devices may include a thin film including a multielement compound represented by Formula 1 and having a thickness equal to or less than about 50 nm, a grain size (A) to thickness (B) ratio (A/B) equal to or greater than about 1.2, and a resistivity equal to or less than about 200 ??.Math.cm:
M.sub.n+1AX.sub.nFormula 1
In Formula 1, M, A, X, and n are as described in the specification.
METHOD FOR REMOVING RADIOACTIVE ELEMENT THORIUM IN RARE EARTH MINERAL
The present invention relates to a method for removing radioactive element thorium in a rare earth mineral, comprising: mixing the rare earth mineral with selenium dioxide in water, reacting radioactive element thorium with selenium dioxide by hydrothermal method, cooling to form a crystal, and separating the crystal to remove the radioactive element thorium. In the invention, tetravalent element thorium is selectively bound to inorganic ligand selenium dioxide in a hydrothermal environment to form a crystal, thereby achieving removal of radioactive element thorium. The method has high crystallization rate and high decontamination efficiency, and removes thorium from trivalent lanthanide element by crystallization solidification under a uniform reaction condition. Compared to a conventional industrial method for thorium separation, the method has low energy consumption and high separation ratio, enables one-step solidification separation, and effectively avoids the disadvantages of redundant separation operations and a large amount of organic and radioactive liquid wastes.
COMPOUND OF CESIUM FLUOROOXOBORATE, NONLINEAR OPTICAL CRYSTAL OF CESIUM FLUOROOXOBORATE, AND METHOD OF PREPARATION AND USE THEREOF
A compound of cesium fluorooxoborate, a nonlinear optical crystal of cesium fluorooxoborate, and a method of preparation and use thereof. The compound has a chemical formula of CsB.sub.4O.sub.6F and a molecular weight of 291.15. It has a crystal structure, which is prepared by a solid-state synthesis method or a vacuum encapsulation method. The crystal has a chemical formula of CsB.sub.4O.sub.6F and a molecular weight of 291.15. It belongs to an orthorhombic crystal system, with a space group of Pna2.sub.1, crystal cell parameters of a=7.9241 , b=11.3996 , c=6.6638 , and ===90, and a unit cell volume of 601.95 .sup.3. A melt method, high temperature solution method, vacuum encapsulation method, hydrothermal method or room temperature solution method is used to grow the crystal of CsB.sub.4O.sub.6F.