C30B29/10

Nonlinear optical material and methods of fabrication

Disclosed is a nonlinear optical material (NLO) for use in deep-UV applications, and methods of fabrication thereof. The NLO is fabricated from a plurality of components according to the formula A.sub.qB.sub.yC.sub.z and a crystallographic non-centrosymmetric (NCS) structure. The NLO material may be fabricated as a polycrystalline or a single crystal material. In an embodiment, the material may be according to a formula Ba.sub.3ZnB.sub.5PO.sub.14.

Nonlinear optical material and methods of fabrication

Disclosed is a nonlinear optical material (NLO) for use in deep-UV applications, and methods of fabrication thereof. The NLO is fabricated from a plurality of components according to the formula A.sub.qB.sub.yC.sub.z and a crystallographic non-centrosymmetric (NCS) structure. The NLO material may be fabricated as a polycrystalline or a single crystal material. In an embodiment, the material may be according to a formula Ba.sub.3ZnB.sub.5PO.sub.14.

METHODS FOR FORMING SILICON-CONTAINING EPITAXIAL LAYERS AND RELATED SEMICONDUCTOR DEVICE STRUCTURES

A method for forming a silicon-containing epitaxial layer is disclosed. The method may include, heating a substrate to a temperature of less than approximately 950? C. and exposing the substrate to a first silicon source comprising a hydrogenated silicon source, a second silicon source, a dopant source, and a halogen source. The method may also include depositing a silicon-containing epitaxial layer wherein the dopant concentration within the silicon-containing epitaxial layer is greater than 3?10.sup.21 atoms per cubic centimeter.

METHODS FOR FORMING SILICON-CONTAINING EPITAXIAL LAYERS AND RELATED SEMICONDUCTOR DEVICE STRUCTURES

A method for forming a silicon-containing epitaxial layer is disclosed. The method may include, heating a substrate to a temperature of less than approximately 950? C. and exposing the substrate to a first silicon source comprising a hydrogenated silicon source, a second silicon source, a dopant source, and a halogen source. The method may also include depositing a silicon-containing epitaxial layer wherein the dopant concentration within the silicon-containing epitaxial layer is greater than 3?10.sup.21 atoms per cubic centimeter.

Solution deposition method for forming metal oxide or metal hydroxide layer

A solution deposition method includes: applying a liquid precursor solution to a substrate, the precursor solution including an oxide of a first metal, a hydroxide of the first metal, or a combination thereof, dissolved in an aqueous ammonia solution; evaporating the precursor solution to directly form a solid seed layer on the substrate, the seed layer including an oxide of the first metal, a hydroxide of the first metal, or a combination thereof, the seed layer being substantially free of organic compounds; and growing a bulk layer on the substrate, using the seed layer as a growth site or a nucleation site.

Solution deposition method for forming metal oxide or metal hydroxide layer

A solution deposition method includes: applying a liquid precursor solution to a substrate, the precursor solution including an oxide of a first metal, a hydroxide of the first metal, or a combination thereof, dissolved in an aqueous ammonia solution; evaporating the precursor solution to directly form a solid seed layer on the substrate, the seed layer including an oxide of the first metal, a hydroxide of the first metal, or a combination thereof, the seed layer being substantially free of organic compounds; and growing a bulk layer on the substrate, using the seed layer as a growth site or a nucleation site.

NANOMETRIC ANATASE LATTICE STABILISED BY CATION VACANCIES, METHODS FOR THE PRODUCTION THEREOF, AND USES OF SAME

The present application describes a process for the preparation of titanium-based compounds having an anatase type structure with cationic vacancies arising from a partial substitution of oxygen atoms by fluorine atoms and hydroxyl groups. Electrochemically active materials comprising the titanium-based compounds for use in lithium-ion battery electrodes are also described.

TRANSITION METAL COMPOSITE HYDROXIDE PARTICLES AND PRODUCTION METHOD THEREOF, CATHODE ACTIVE MATERIAL FOR NON-AQUEOUS ELECTROLYTE RECHARGEABLE BATTERY AND PRODUCTION METHOD THEREOF, AND NONAQUEOUS ELECTROLYTE RECHARGEABLE BATTERY
20180254481 · 2018-09-06 ·

Provided is a cathode active material that can simultaneously improve the capacity characteristics, output characteristics, and cycling characteristics of a rechargeable battery when used as cathode material for a non-aqueous electrolyte rechargeable battery. After performing nucleation by controlling an aqueous solution for nucleation that includes a metal compound that includes at least a transition metal and an ammonium ion donor so that the pH value becomes 12.0 to 14.0 (nucleation process), nuclei are caused to grow by controlling aqueous solution for particle growth that includes the nuclei so that the pH value is less than in the nucleation process and is 10.5 to 12.0 (particle growth process). When doing this, the reaction atmosphere in the nucleation process and at the beginning of the particle growth process is a non-oxidizing atmosphere, and in the particle growth process, atmosphere control by which the reaction atmosphere is switched from this non-oxidizing atmosphere to an oxidizing atmosphere, and is then switched again to a non-oxidizing atmosphere is performed at least one time. Cathode active material is obtained with the composite hydroxide particles that are obtained by this kind of crystallization reaction as a precursor.

TRANSITION METAL COMPOSITE HYDROXIDE PARTICLES AND PRODUCTION METHOD THEREOF, CATHODE ACTIVE MATERIAL FOR NON-AQUEOUS ELECTROLYTE RECHARGEABLE BATTERY AND PRODUCTION METHOD THEREOF, AND NONAQUEOUS ELECTROLYTE RECHARGEABLE BATTERY
20180254481 · 2018-09-06 ·

Provided is a cathode active material that can simultaneously improve the capacity characteristics, output characteristics, and cycling characteristics of a rechargeable battery when used as cathode material for a non-aqueous electrolyte rechargeable battery. After performing nucleation by controlling an aqueous solution for nucleation that includes a metal compound that includes at least a transition metal and an ammonium ion donor so that the pH value becomes 12.0 to 14.0 (nucleation process), nuclei are caused to grow by controlling aqueous solution for particle growth that includes the nuclei so that the pH value is less than in the nucleation process and is 10.5 to 12.0 (particle growth process). When doing this, the reaction atmosphere in the nucleation process and at the beginning of the particle growth process is a non-oxidizing atmosphere, and in the particle growth process, atmosphere control by which the reaction atmosphere is switched from this non-oxidizing atmosphere to an oxidizing atmosphere, and is then switched again to a non-oxidizing atmosphere is performed at least one time. Cathode active material is obtained with the composite hydroxide particles that are obtained by this kind of crystallization reaction as a precursor.

Orderly patterned remote phosphor crystal material and method for preparation the material and its application
20180240943 · 2018-08-23 ·

The present invention provide an orderly patterned remote phosphor crystal material and method for preparation the material and its application, which adopts short-pulse laser to make micro-structure arrays on the surface of phosphor crystal material to enhance the light extraction efficiency of the LED based on the material. The present invention overcomes the phosphor crystal material's properties of hard and dry/wet etching resistance and simplifies the processing steps, which accelerate the processing and improve the producing efficiency. The present invention is able to be performed under room temperature and environment friendly and the micro-structure is stable, which has broad application prospects in white LED field.