The present invention provide an orderly patterned remote phosphor crystal material and method for preparation the material and its application, which adopts short-pulse laser to make micro-structure arrays on the surface of phosphor crystal material to enhance the light extraction efficiency of the LED based on the material. The present invention overcomes the phosphor crystal material's properties of hard and dry/wet etching resistance and simplifies the processing steps, which accelerate the processing and improve the producing efficiency. The present invention is able to be performed under room temperature and environment friendly and the micro-structure is stable, which has broad application prospects in white LED field.

A monolithic crystal having the atomic formula W.sub.nX.sub.mY.sub.pZ.sub.r, with at least one dimension greater than about 10 mm. A method for top seed, solution growth of a monolithic crystal, wherein the method includes the steps of: preparing a precursor, forming a seed crystal, and forming the monolithic crystal. Some configurations of the method include the differential control of the crystal flux temperature in a furnace and the rotational frequency of a seed crystal in the crystal flux.

A monolithic crystal having the atomic formula W.sub.nX.sub.mY.sub.pZ.sub.r, with at least one dimension greater than about 10 mm. A method for top seed, solution growth of a monolithic crystal, wherein the method includes the steps of: preparing a precursor, forming a seed crystal, and forming the monolithic crystal. Some configurations of the method include the differential control of the crystal flux temperature in a furnace and the rotational frequency of a seed crystal in the crystal flux.

A nickel-doped Mg nanocrystals encapsulated by molecular-sieving reduced graphene oxide (rGO) layers is disclosed. Dual-channel doping, which combines external (rGO strain) and internal (Ni doping) mechanisms, efficiently promotes both hydriding and dehydriding processes of Mg nanocrystals, simultaneously improving both the kinetic and thermodynamic properties of the material. The composite achieves both high hydrogen storage capacity and excellent kinetics while maintaining robustness. The realization of three complementary functional components in one material-environmentally friendly and earth-abundant Mg for storage, Ni dopants for catalysis, and rGO layers for encapsulation-breaks new ground in metal hydrides and makes solid-state materials viable candidates for hydrogen-fueled applications.

A nickel-doped Mg nanocrystals encapsulated by molecular-sieving reduced graphene oxide (rGO) layers is disclosed. Dual-channel doping, which combines external (rGO strain) and internal (Ni doping) mechanisms, efficiently promotes both hydriding and dehydriding processes of Mg nanocrystals, simultaneously improving both the kinetic and thermodynamic properties of the material. The composite achieves both high hydrogen storage capacity and excellent kinetics while maintaining robustness. The realization of three complementary functional components in one material-environmentally friendly and earth-abundant Mg for storage, Ni dopants for catalysis, and rGO layers for encapsulation-breaks new ground in metal hydrides and makes solid-state materials viable candidates for hydrogen-fueled applications.

A method of forming a film on a substrate having silicon surfaces and dielectric surfaces includes precleaning the substrate; applying an inhibitor species to the dielectric surfaces; and exposing the substrate to a precursor while maintaining a temperature of less than about 600 degrees Celsius.

A method of forming a film on a substrate having silicon surfaces and dielectric surfaces includes precleaning the substrate; applying an inhibitor species to the dielectric surfaces; and exposing the substrate to a precursor while maintaining a temperature of less than about 600 degrees Celsius.

The present invention relates to the field of nonlinear optical crystal materials and provided herein a Li.sub.4Sr(BO.sub.3).sub.2 compound, a Li.sub.4Sr(BO.sub.3).sub.2 nonlinear optical crystal as well as preparation method and use thereof. The Li.sub.4Sr(BO.sub.3).sub.2 nonlinear optical crystal has a second harmonic conversion efficiency at 1064 nm of about two times that of a KH.sub.2PO.sub.4 (KDP) crystal, and an UV absorption cut-off edge less than 190 nm. Furthermore, the crystal did not disintegrate. By flux method with Li.sub.2O, Li.sub.2OB.sub.2O and Li.sub.2OB.sub.2O.sub.3LiF used as flux agent, large-size and transparent Li.sub.4Sr(BO.sub.3).sub.2 nonlinear optical crystal can grow. The Li.sub.4Sr(BO.sub.3).sub.2 crystal had stable physicochemical properties, moderate hardness, and was easy to cut, processing, preserve and use. Therefore it can be used for preparing nonlinear optical devices and thus for developing nonlinear optical applications in the ultraviolet and deep-ultraviolet band.

The present invention relates to the field of nonlinear optical crystal materials and provided herein a Li.sub.4Sr(BO.sub.3).sub.2 compound, a Li.sub.4Sr(BO.sub.3).sub.2 nonlinear optical crystal as well as preparation method and use thereof. The Li.sub.4Sr(BO.sub.3).sub.2 nonlinear optical crystal has a second harmonic conversion efficiency at 1064 nm of about two times that of a KH.sub.2PO.sub.4 (KDP) crystal, and an UV absorption cut-off edge less than 190 nm. Furthermore, the crystal did not disintegrate. By flux method with Li.sub.2O, Li.sub.2OB.sub.2O and Li.sub.2OB.sub.2O.sub.3LiF used as flux agent, large-size and transparent Li.sub.4Sr(BO.sub.3).sub.2 nonlinear optical crystal can grow. The Li.sub.4Sr(BO.sub.3).sub.2 crystal had stable physicochemical properties, moderate hardness, and was easy to cut, processing, preserve and use. Therefore it can be used for preparing nonlinear optical devices and thus for developing nonlinear optical applications in the ultraviolet and deep-ultraviolet band.

An epitaxial diamond layer and a method for the production thereof can be provided that comprises the following steps: providing a substrate; depositing a metal layer on at least a subarea of the substrate, wherein the metal layer contains, or consists of, at least one period 4, 5 or 6 metal having a melting point of greater than or equal to 1200 K; and depositing a diamond layer on at least a subarea of the metal layer; wherein at least one intermediate layer is deposited between the metal layer and the diamond layer and has a higher lattice constant than undoped crystalline diamond and a lower hardness than undoped crystalline diamond.