The present disclosure relates to crystalline solids comprising a compound of Formula (I),

##STR00001##

wherein R is n-propyl, and methods of making compounds of Formula (I) wherein R is C1-C4 alkyl or C2-C4 alkenyl. The present disclosure also relates to crystalline solids comprising a compound of Formula (II),

##STR00002##

The present disclosure further relates to methods of preparing the crystalline solids, and pharmaceutical preparations of the crystalline solids, and use of such pharmaceutical preparations in treatment of diseases and conditions.

Embodiments of the present disclosure provide for single crystal organometallic halide perovskites, methods of making, methods of use, devices incorporating single crystal organometallic halide perovskites, and the like.

Embodiments of the present disclosure provide for single crystal organometallic halide perovskites, methods of making, methods of use, devices incorporating single crystal organometallic halide perovskites, and the like.

Highly phase-pure, two-dimensional, multilayered organic-inorganic hybrid, halide perovskites are provided. Also provided are optoelectronic devices that incorporate the halide perovskites as photoactive materials.

Highly phase-pure, two-dimensional, multilayered organic-inorganic hybrid, halide perovskites are provided. Also provided are optoelectronic devices that incorporate the halide perovskites as photoactive materials.

Disclosed are criteria for a lattice matched, multilayer, organic crystal heterostructure. Current organic devices (e.g., photovoltaics, light emitting diodes, or transistors) rely on amorphous material despite superior charge transport properties of crystalline organic semiconductors. Achieving a fully crystalline device architecture requires growth of a molecular crystal atop a different one, or heteroepitaxy, and is particularly relevant in organic semiconductor devices that demand multiple layers of different molecules. This challenge is complicated when attempting to stack highly ordered layers needed for crystalline devices because strategies are needed to ensure that each layer grows crystalline. It is shown herein that lattice matching alone is not sufficient for successful organic heteroepitaxy deposited via physical vapor deposition. The process disclosed herein includes an additional criterion in which the lattice matched plane of the adlayer must also be the crystal face with the lowest surface energy. Application of this process leads to a full crystalline multilayer system in which there is perfect registry between the template layer and adlayer. Not only does this allow for the study of highly ordered interfaces, but it also opens the door to entirely crystalline device architectures, likely improving the efficiency over their amorphous counterparts.

Disclosed are criteria for a lattice matched, multilayer, organic crystal heterostructure. Current organic devices (e.g., photovoltaics, light emitting diodes, or transistors) rely on amorphous material despite superior charge transport properties of crystalline organic semiconductors. Achieving a fully crystalline device architecture requires growth of a molecular crystal atop a different one, or heteroepitaxy, and is particularly relevant in organic semiconductor devices that demand multiple layers of different molecules. This challenge is complicated when attempting to stack highly ordered layers needed for crystalline devices because strategies are needed to ensure that each layer grows crystalline. It is shown herein that lattice matching alone is not sufficient for successful organic heteroepitaxy deposited via physical vapor deposition. The process disclosed herein includes an additional criterion in which the lattice matched plane of the adlayer must also be the crystal face with the lowest surface energy. Application of this process leads to a full crystalline multilayer system in which there is perfect registry between the template layer and adlayer. Not only does this allow for the study of highly ordered interfaces, but it also opens the door to entirely crystalline device architectures, likely improving the efficiency over their amorphous counterparts.

Inverse temperature crystallization processes are provided to produce perovskite single crystals (PSCs), as well as surface passivation techniques for producing stabilizing the PSCs in the bulk region. Stable hybrid perovskite material include a bulk region comprising a single crystal perovskite material having a first bandgap and a smooth perovskite surface layer having a second bandgap greater than the first bandgap. Devices for detection and energy conversion are also contemplated, including for spectroscopic photon and elementary particle detection, such as radiation detectors. Crystallization chambers for forming the PSCs are also provided.

Inverse temperature crystallization processes are provided to produce perovskite single crystals (PSCs), as well as surface passivation techniques for producing stabilizing the PSCs in the bulk region. Stable hybrid perovskite material include a bulk region comprising a single crystal perovskite material having a first bandgap and a smooth perovskite surface layer having a second bandgap greater than the first bandgap. Devices for detection and energy conversion are also contemplated, including for spectroscopic photon and elementary particle detection, such as radiation detectors. Crystallization chambers for forming the PSCs are also provided.

The present disclosure relates to crystalline solids comprising a compound of Formula (I), ##STR00001##
wherein R is n-propyl, and methods of making compounds of Formula (I) wherein R is C1-C4 alkyl or C2-C4 alkenyl. The present disclosure also relates to crystalline solids comprising a compound of Formula (II), ##STR00002## The present disclosure further relates to methods of preparing the crystalline solids, and pharmaceutical preparations of the crystalline solids, and use of such pharmaceutical preparations in treatment of diseases and conditions.