Patent classifications
C30B29/60
Preparation of nanoparticle materials
A method of producing nanoparticles comprises effecting conversion of a molecular cluster compound to the material of the nanoparticles. The molecular cluster compound comprises a first ion and a second ion to be incorporated into the growing nanoparticles. The conversion can be effected in the presence of a second molecular cluster compound comprising a third ion and a fourth ion to be incorporated into the growing nanoparticles, under conditions permitting seeding and growth of the nanoparticles via consumption of a first molecular cluster compound.
Method for epitaxial growth of single crystalline heterogeneous 2D materials and stacked structure
Disclosed herein is a method for 2D epitaxial growth comprising: forming a single crystalline h-BN template; forming a plurality of nuclei by depositing a heterogeneous precursor on the h-BN template; and forming a heterogeneous structure layer by growing the plurality of deposited nuclei with a van der Waals epitaxial growth, wherein the heterogeneous structure layer is a single crystal.
Crystalline α-FE2O3 nanoparticles and method of making and use thereof in photodegradation of organic pollutants, as a photocatalyst and as an antibacterial composition
Crystalline α-Fe.sub.2O.sub.3 nanoparticles prepared by ultrasonic treatment of a solution of an iron (III)-containing precursor and an extract from the seeds of a plant in the family Linaceae. The crystalline α-Fe.sub.2O.sub.3 nanoparticles have a spherical morphology with a diameter of 100 nm to 300 nm, a mean surface area of 240 to 260 m.sup.2/g, and a type-II nitrogen adsorption-desorption BET isotherm with a H3 hysteresis loop. The crystalline α-Fe.sub.2O.sub.3 nanoparticles have a band gap of 2.10 to 2.16 eV and a mean pore size of 7.25 to 9.25 nm. A method for the photocatalytic decomposition of organic pollutants using the crystalline α-Fe.sub.2O.sub.3 nanoparticles. An antibacterial composition containing the crystalline α-Fe.sub.2O.sub.3 nanoparticles.
Compositions and aggregates comprising boron nitride nanotube structures, and methods of making
A composition (or an aggregate) comprising an epitaxial h-BN/BNNT structure that comprises a hexagonal boron nitride structure that is epitaxial with respect to a boron nitride nanotube structure. Also, a composition (or an aggregate) that comprises independent boron nitride nanotubes, in which a total mass percentage of independent hexagonal boron nitride and residual boron in the composition is not more than 35%. Also, a composition (or an aggregate) in which not more than 1% of independent boron nitride nanotubes and boron nitride nanotube structures have a dixie cup or bamboo defect. Also, a composition in which at least 50% of independent boron nitride nanotubes and boron nitride nanotube structures are single-wall. Also, a method of making a composition that comprises epitaxial h-BN/BNNT structures.
Controlled design of localized states in photonic quasicrystals
This invention relates generally to the field of quasicrystalline structures.
METASTABLE SINGLE-CRYSTAL RARE EARTH MAGNET FINE POWDER AND METHOD FOR PRODUCING SAME
A single crystal particle powder having a crystal structure of TbCu.sub.7-type of the present invention is represented by the general formula:
[Chemical Formula 1]
(R.sub.1-zM.sub.z)T.sub.x (1)
or the general formula:
[Chemical Formula 2]
(R.sub.1-zM.sub.z)T.sub.xN.sub.y (2)
and has a crystal structure of TbCu.sub.7-type,
wherein R is at least one element selected from the group consisting of Sm and Nd, T is at least one element selected from the group consisting of Fe and Co, x is 7.0≤x≤10.0, y is 1.0≤y≤2.0, and z is 0.0≤z≤0.3.
METHODS FOR FORMING A SILICON SUBSTRATE WITH REDUCED GROWN-IN NUCLEI FOR EPITAXIAL DEFECTS AND METHODS FOR FORMING AN EPITAXIAL WAFER
Methods for preparing single crystal silicon substrates for epitaxial growth are disclosed. The methods may involve control of the (i) a growth velocity, v, and/or (ii) an axial temperature gradient, G, during the growth of an ingot segment such that v/G is less than a critical v/G and/or is less than a value of v/G that depends on the boron concentration of the ingot. Methods for preparing epitaxial wafers are also disclosed.
Nanowires-based transparent conductors
A method of fabricating a transparent conductor is provided. The method includes forming a nanowire dispersion layer on a substrate, forming a nanowire network layer on the substrate by drying the nanowire dispersion layer, and forming a matrix material layer on the nanowire network layer.
Nanowires-based transparent conductors
A method of fabricating a transparent conductor is provided. The method includes forming a nanowire dispersion layer on a substrate, forming a nanowire network layer on the substrate by drying the nanowire dispersion layer, and forming a matrix material layer on the nanowire network layer.
Methods for producing composite GaN nanocolumns and light emitting structures made from the methods
A method for growing on a substrate strongly aligned uniform cross-section semiconductor composite nanocolumns is disclosed. The method includes: (a) forming faceted pyramidal pits on the substrate surface; (b) initiating nucleation on the facets of the pits; and; (c) promoting the growth of nuclei toward the center of the pits where they coalesce with twinning and grow afterwards together as composite nanocolumns. Multi-quantum-well, core-shell nanocolumn heterostructures can be grown on the sidewalls of the nanocolumns. Furthermore, a continuous semiconductor epitaxial layer can be formed through the overgrowth of the nanocolumns to facilitate fabrication of high-quality planar device structures or for light emitting structures.