There is disclosed a system for the electrostatic control of a metal wetting layer during deposition and a method of electrostatically controlling a metal wetting layer during deposition using a deposition system. In one example, control of the metal wetting layer is provided by changing or applying an electrostatic field acting on a deposited material or acting on a substrate on which a material is deposited. In another example, control is of the thickness of the metal wetting layer. In another example, control is of the presence or absence of the metal wetting layer. The metal wetting layer can be a liquid metal or liquid metal alloy, for example the metal wetting layer could be Boron, Aluminium, Indium, Gallium or Thallium. In another example, control is of the thickness, or presence, of a Gallium wetting layer during GaN film growth.

There is disclosed a system for the electrostatic control of a metal wetting layer during deposition and a method of electrostatically controlling a metal wetting layer during deposition using a deposition system. In one example, control of the metal wetting layer is provided by changing or applying an electrostatic field acting on a deposited material or acting on a substrate on which a material is deposited. In another example, control is of the thickness of the metal wetting layer. In another example, control is of the presence or absence of the metal wetting layer. The metal wetting layer can be a liquid metal or liquid metal alloy, for example the metal wetting layer could be Boron, Aluminium, Indium, Gallium or Thallium. In another example, control is of the thickness, or presence, of a Gallium wetting layer during GaN film growth.

An electrostatic levitation crystal growth apparatus for a solution and a crystal growing method using the same. The apparatus may include an upper electrode, a lower electrode vertically spaced apart from the upper electrode, a power supply unit configured to apply a vertical electrostatic field between the upper electrode and the lower electrode, and a droplet dispenser configured to eject a solution into a region between the upper and lower electrodes and thereby to form a solution droplet. The solution droplet may be maintained in a charged state and may be electrostatically levitated against the gravity exerted thereon, by the vertical electrostatic field. The solution droplet may be evaporated in the electrostatically levitated state, and a solute dissolved in the solution may be grown to form a crystal.

An electrostatic levitation crystal growth apparatus for a solution and a crystal growing method using the same. The apparatus may include an upper electrode, a lower electrode vertically spaced apart from the upper electrode, a power supply unit configured to apply a vertical electrostatic field between the upper electrode and the lower electrode, and a droplet dispenser configured to eject a solution into a region between the upper and lower electrodes and thereby to form a solution droplet. The solution droplet may be maintained in a charged state and may be electrostatically levitated against the gravity exerted thereon, by the vertical electrostatic field. The solution droplet may be evaporated in the electrostatically levitated state, and a solute dissolved in the solution may be grown to form a crystal.

A process for producing a cube textured foil is described. The process includes providing a cube textured metal foil M. The process further includes electroplating an epitaxial layer of an alloy on the foil M, whereby the epitaxial layer substantially replicates the cube texture of the metal foil M. The process further includes electroplating a non-epitaxial layer of an alloy on the epitaxial layer. The process further includes separating the electroplated alloy from the cube textured metal foil M to obtain an electro-formed alloy with one cube textured surface.

A process for producing a cube textured foil is described. The process includes providing a cube textured metal foil M. The process further includes electroplating an epitaxial layer of an alloy on the foil M, whereby the epitaxial layer substantially replicates the cube texture of the metal foil M. The process further includes electroplating a non-epitaxial layer of an alloy on the epitaxial layer. The process further includes separating the electroplated alloy from the cube textured metal foil M to obtain an electro-formed alloy with one cube textured surface.

A lithium metal negative electrode for an electrochemical cell for a secondary lithium metal battery includes a polycrystalline metal substrate having a major facing surface with a defined crystallographic texture. An epitaxial lithium metal layer is formed on the major facing surface of the polycrystalline metal substrate. The epitaxial lithium metal layer exhibits a predominant crystal orientation. The predominant crystal orientation of the epitaxial lithium metal layer is derived from the defined crystallographic texture of the major facing surface of the polycrystalline metal substrate.

A lithium metal negative electrode for an electrochemical cell for a secondary lithium metal battery includes a polycrystalline metal substrate having a major facing surface with a defined crystallographic texture. An epitaxial lithium metal layer is formed on the major facing surface of the polycrystalline metal substrate. The epitaxial lithium metal layer exhibits a predominant crystal orientation. The predominant crystal orientation of the epitaxial lithium metal layer is derived from the defined crystallographic texture of the major facing surface of the polycrystalline metal substrate.

There is disclosed an insulated metal substrate, consisting of a dielectric oxide coatings of high crystallinity (>vol 90%) on aluminium, magnesium or titanium and high thermal conductivity (over 6 Wm.sup.1K.sup.1), formed by plasma electrolytic oxidation on a surface comprising aluminium, magnesium or titanium. There is also disclosed a plasma electrolytic oxidation process for generating dielectric oxide coatings of controlled crystallinity on a surface of a metallic workpiece, wherein at least a series of positive pulses of current are applied to the workpiece in an electrolyte so as to generate plasma discharges, wherein discharge currents are restricted to levels no more than 50 mA, discharge durations are restricted to durations of no more than 100 s and are shorter than the durations of each the positive pulses, and/or by restricting the power of individual plasma discharges to under 15W. There is also disclosed an insulated metal substrate capable of withstanding exposure to high temperatures (over 300 C.) and thermal shock or repeated thermal cycling of over 300 C., as a result of excellent adhesion of the insulating dielectric to the metal substrate, and the mechanically compliant nature of the coating (E20-30 GPa). Furthermore, there is disclosed a method of making these insulated metal substrates so thin as to be mechanically flexible or pliable without detriment to their electrical insulation.

There is disclosed an insulated metal substrate, consisting of a dielectric oxide coatings of high crystallinity (>vol 90%) on aluminium, magnesium or titanium and high thermal conductivity (over 6 Wm.sup.1K.sup.1), formed by plasma electrolytic oxidation on a surface comprising aluminium, magnesium or titanium. There is also disclosed a plasma electrolytic oxidation process for generating dielectric oxide coatings of controlled crystallinity on a surface of a metallic workpiece, wherein at least a series of positive pulses of current are applied to the workpiece in an electrolyte so as to generate plasma discharges, wherein discharge currents are restricted to levels no more than 50 mA, discharge durations are restricted to durations of no more than 100 s and are shorter than the durations of each the positive pulses, and/or by restricting the power of individual plasma discharges to under 15W. There is also disclosed an insulated metal substrate capable of withstanding exposure to high temperatures (over 300 C.) and thermal shock or repeated thermal cycling of over 300 C., as a result of excellent adhesion of the insulating dielectric to the metal substrate, and the mechanically compliant nature of the coating (E20-30 GPa). Furthermore, there is disclosed a method of making these insulated metal substrates so thin as to be mechanically flexible or pliable without detriment to their electrical insulation.