A feed assembly supplies polysilicon to a growth chamber for growing a crystal ingot from a melt. An example system includes a housing having support rails for receiving one of a granular tray and a chunk tray and a feed material reservoir positioned above the support rails to selectively feed one of either the granular tray or the chunk tray. A valve mechanism and pulse vibrator are also disclosed.

A feed assembly supplies polysilicon to a growth chamber for growing a crystal ingot from a melt. An example system includes a housing having support rails for receiving one of a granular tray and a chunk tray and a feed material reservoir positioned above the support rails to selectively feed one of either the granular tray or the chunk tray. A valve mechanism and pulse vibrator are also disclosed.

Single crystals of semiconductor material are produced by an FZ method, wherein a molten zone is created between a feed rod and a growing single crystal; the method involving melting feed rod material in a high frequency magnetic field of a first induction coil; crystallizing material of the molten zone on top of the growing single crystal; rotating the growing single crystal about an axis of rotation and changing the direction of rotation and the speed of rotation according to a predetermined pattern; and imposing an alternating magnetic field of a second induction coil on the molten zone, wherein the alternating magnetic field is not axisymmetric with respect to the axis of rotation of the growing single crystal.

Single crystals of semiconductor material are produced by an FZ method, wherein a molten zone is created between a feed rod and a growing single crystal; the method involving melting feed rod material in a high frequency magnetic field of a first induction coil; crystallizing material of the molten zone on top of the growing single crystal; rotating the growing single crystal about an axis of rotation and changing the direction of rotation and the speed of rotation according to a predetermined pattern; and imposing an alternating magnetic field of a second induction coil on the molten zone, wherein the alternating magnetic field is not axisymmetric with respect to the axis of rotation of the growing single crystal.

A silicon wafer having a BMD density of 5×10.sup.8/cm.sup.3 or more and 2.5×10.sup.10/cm.sup.3 or less in a region of 80 μm to 285 μm from the wafer surface when the silicon wafer is heat-treated at a temperature X (° C., 700° C.≤X≤1000° C.) for a time Y (min) and then subjected to an infrared tomography method in which the laser power is set to 50 mW and the exposure time of a detector is set to 50 msec. The time Y and the temperature X satisfy Y=7.88×10.sup.67×X.sup.−22.5.

A silicon wafer having a BMD density of 5×10.sup.8/cm.sup.3 or more and 2.5×10.sup.10/cm.sup.3 or less in a region of 80 μm to 285 μm from the wafer surface when the silicon wafer is heat-treated at a temperature X (° C., 700° C.≤X≤1000° C.) for a time Y (min) and then subjected to an infrared tomography method in which the laser power is set to 50 mW and the exposure time of a detector is set to 50 msec. The time Y and the temperature X satisfy Y=7.88×10.sup.67×X.sup.−22.5.

A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.

A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.

A method for producing a silicon ingot by the horizontal magnetic field Czochralski method includes rotating a crucible containing a silicon melt, applying a horizontal magnetic field to the crucible, contacting the silicon melt with a seed crystal, and withdrawing the seed crystal from the silicon melt while rotating the crucible to form a silicon ingot. The crucible has a wettable surface with a cristobalite layer formed thereon.

A method for producing a silicon ingot by the horizontal magnetic field Czochralski method includes rotating a crucible containing a silicon melt, applying a horizontal magnetic field to the crucible, contacting the silicon melt with a seed crystal, and withdrawing the seed crystal from the silicon melt while rotating the crucible to form a silicon ingot. The crucible has a wettable surface with a cristobalite layer formed thereon.