The disclosure is directed to a method to recover the gate oxide integrity yield of a silicon wafer after rapid thermal anneal in an ambient atmosphere comprising a nitrogen containing gas, such as NH.sub.3 or N.sub.2. Generally, rapid thermal anneals in an ambient atmosphere comprising a nitrogen containing gas, such as NH.sub.3 or N.sub.2 to thereby imprint an oxygen precipitate profile can degrade the GOI yield of a silicon wafer by exposing as-grown crystal defects (oxygen precipitate) and vacancies generated by the silicon nitride film. The present invention restores GOI yield by stripping the silicon nitride layer, which is followed by wafer oxidation, which is followed by stripping the silicon oxide layer.

The present disclosure discloses a preparation method of an aluminum nitride (AlN) composite structure based on a two-dimensional (2D) crystal transition layer. The preparation method of the present disclosure includes: transferring the 2D crystal transition layer on a first periodic groove of an epitaxial substrate; forming a second periodic groove staggered with the first periodic groove on the 2D crystal transition layer; depositing a supporting protective layer; depositing a functional layer of a required AlN-based material; and removing the 2D crystal transition layer through thermal oxidation to obtain a semi-suspended AlN composite structure. The preparation method of the present disclosure has low difficulty and is suitable for large-scale industrial production. Design windows of the periodic grooves and the AlN functional layer are large and can meet the material requirements of deep ultraviolet light-emitting diodes (DUV-LEDs) and radio frequency (RF) electronic devices for different purposes, resulting in a wide application range.

A device includes a semiconductor substrate containing gallium nitride and having a crystal face inclined from 0.05 to 15 inclusive with respect to the c-plane. The semiconductor substrate includes an irregular portion on the crystal face, and the contact angle of pure water having a specific resistance of 18 M.Math.cm or more on the surface of the irregular portion is 10 or less.

The disclosure is directed to a method to recover the gate oxide integrity yield of a silicon wafer after rapid thermal anneal in an ambient atmosphere comprising a nitrogen containing gas, such as NH.sub.3 or N.sub.2. Generally, rapid thermal anneals in an ambient atmosphere comprising a nitrogen containing gas, such as NH.sub.3 or N.sub.2 to thereby imprint an oxygen precipitate profile can degrade the GOI yield of a silicon wafer by exposing as-grown crystal defects (oxygen precipitate) and vacancies generated by the silicon nitride film. The present invention restores GOI yield by stripping the silicon nitride layer, which is followed by wafer oxidation, which is followed by stripping the silicon oxide layer.

A device includes a semiconductor substrate containing gallium nitride and having a crystal face inclined from 0.05 to 15 inclusive with respect to the c-plane. The semiconductor substrate includes an irregular portion on the crystal face, and the contact angle of pure water having a specific resistance of 18 M.Math.cm or more on the surface of the irregular portion is 10 or less.

A method, for manufacturing a silicon carbide semiconductor device, includes: forming a silicon carbide epitaxial film on a silicon carbide substrate; flattening a surface of the epitaxial film by using chemical mechanical polishing such that the surface of the epitaxial film has an arithmetic mean roughness Ra of 0.3 nm or less; thermally oxidizing the surface of the epitaxial film to form a sacrificial oxide; removing the sacrificial oxide; and cleaning, by using deionized water, a surface of the epitaxial film exposed by the removing of the sacrificial oxide.

A method for a heat treatment of a silicon single crystal wafer in an oxidizing ambient, including: performing the heat treatment based on a condition determined by a tripartite correlation between a heat treatment temperature during the heat treatment, an oxygen concentration in the silicon single crystal wafer before the heat treatment, and a growth condition of a silicon single crystal from which the silicon single crystal wafer is cut out. This provides a method for a heat treatment of a silicon single crystal wafer which can annihilate void defects or micro oxide precipitate nuclei in a silicon single crystal wafer with low cost, efficiently, and securely by a heat treatment in an oxidizing ambient.

A method is provided for depositing textured wide bandgap materials, such as polymers or perovskites, on a textured transparent conducting oxide on inorganic thin-film, which serves as a recombination layer, or interfacial conducting layer (ICL), for tandem or multi junction solar cells.

A semiconductor wafer includes first and second main surfaces opposite to each other along a vertical direction, and a side surface encircling the semiconductor wafer. A lateral distance perpendicular to the vertical direction between the side surface and a center of the semiconductor wafer includes first and second parts. The first part extends from the side surface to the second part and the second part extends from the first part to the center. An average concentration of at least one of nitrogen and oxygen in the first part is greater than 510.sup.14 cm.sup.3 and exceeds an average concentration of the at least one of nitrogen and oxygen in the second part by more than 20% of the average concentration of the at least one of nitrogen and oxygen in the second part.

The disclosure is directed to a method to recover the gate oxide integrity yield of a silicon wafer after rapid thermal anneal in an ambient atmosphere comprising a nitrogen containing gas, such as NH.sub.3 or N.sub.2. Generally, rapid thermal anneals in an ambient atmosphere comprising a nitrogen containing gas, such as NH.sub.3 or N.sub.2 to thereby imprint an oxygen precipitate profile can degrade the GOI yield of a silicon wafer by exposing as-grown crystal defects (oxygen precipitate) and vacancies generated by the silicon nitride film. The present invention restores GOI yield by stripping the silicon nitride layer, which is followed by wafer oxidation, which is followed by stripping the silicon oxide layer.