Disclosed herein is a method of producing a substrate having a wrinkle pattern of a single-layer rhenium disulfide (ReS.sub.2) nanoflakes deposited thereon. The method is characterized by using ammonium rhenium and sulfur powders as the rhenium source and the sulfur source, respectively; and with the addition of molecular sieve to control the release of the rhenium source during the deposition of ReS.sub.2, in which a single layer of ReS.sub.2 is deposited on a substrate via chemical vapor deposition. The single-layer ReS.sub.2 is then exposed to UV light to induce the formation of a wrinkle pattern.

A method for preparing large size beta-type ammonium tetramolybdate monocrystal particle includes industrial ammonium molybdate, ammonia, de-ionized water are used to prepare ammonium molybdate solution with concentration of 0.2˜0.6 g/ml; pH is adjusted to 5˜7, temperature is adjusted to the first temperature of 70˜90° C. to obtain the first ammonium molybdate solution; beta-type ammonium tetramolybdate crystal seed is put into crystallization container, and the first ammonium molybdate solution is poured in the crystallization container, to form crystallization system; the crystallization system stands still at room temperature, naturally cooling, the beta-type ammonium tetramolybdate crystal seed grows into large size beta-type ammonium tetramolybdate monocrystal particle. A beta-type ammonium tetramolybdate crystal seed is obtained by constant-temperature crystallization at 70˜90° C. The obtained beta-type ammonium tetramolybdate crystal seed is put stewing in the first ammonium molybdate solution and is naturally cooling to produce large size beta-type ammonium tetramolybdate monocrystal particle forms.

A method for preparing large size beta-type ammonium tetramolybdate monocrystal particle includes industrial ammonium molybdate, ammonia, de-ionized water are used to prepare ammonium molybdate solution with concentration of 0.2˜0.6 g/ml; pH is adjusted to 5˜7, temperature is adjusted to the first temperature of 70˜90° C. to obtain the first ammonium molybdate solution; beta-type ammonium tetramolybdate crystal seed is put into crystallization container, and the first ammonium molybdate solution is poured in the crystallization container, to form crystallization system; the crystallization system stands still at room temperature, naturally cooling, the beta-type ammonium tetramolybdate crystal seed grows into large size beta-type ammonium tetramolybdate monocrystal particle. A beta-type ammonium tetramolybdate crystal seed is obtained by constant-temperature crystallization at 70˜90° C. The obtained beta-type ammonium tetramolybdate crystal seed is put stewing in the first ammonium molybdate solution and is naturally cooling to produce large size beta-type ammonium tetramolybdate monocrystal particle forms.

Methods for determining suitability of a silicon substrate for epitaxy and/or for determining slip resistance during epitaxy and post-epitaxy thermal treatment are disclosed. The methods involve evaluating different substrates of the epitaxial wafers by imaging the wafer by infrared depolarization. An infrared depolarization parameter is generated for each epitaxial wafer. The parameters may be compared to determine which substrates are well-suited for epitaxial and/or post-epi heat treatments.

Methods for determining suitability of a silicon substrate for epitaxy and/or for determining slip resistance during epitaxy and post-epitaxy thermal treatment are disclosed. The methods involve evaluating different substrates of the epitaxial wafers by imaging the wafer by infrared depolarization. An infrared depolarization parameter is generated for each epitaxial wafer. The parameters may be compared to determine which substrates are well-suited for epitaxial and/or post-epi heat treatments.

Silicon carbide (SiC) crystalline materials and related methods are disclosed that provide SiC crystalline materials with reduced optical absorption. In certain aspects, SiC crystalline materials with reduced absorption coefficients for wavelengths of light within the visible spectrum are disclosed. Various peaks in absorption over a wavelength spectrum may be reduced in SiC crystalline materials to improve overall absorption coefficient uniformity across the visible spectrum. By providing such improvements in absorption coefficients for SiC crystalline materials, reduced reflection and transmission losses of light in corresponding devices may be realized. Related methods are disclosed that include various combinations of crystalline growth, with and without various post-growth thermal conditioning steps.

Silicon carbide (SiC) crystalline materials and related methods are disclosed that provide SiC crystalline materials with reduced optical absorption. In certain aspects, SiC crystalline materials with reduced absorption coefficients for wavelengths of light within the visible spectrum are disclosed. Various peaks in absorption over a wavelength spectrum may be reduced in SiC crystalline materials to improve overall absorption coefficient uniformity across the visible spectrum. By providing such improvements in absorption coefficients for SiC crystalline materials, reduced reflection and transmission losses of light in corresponding devices may be realized. Related methods are disclosed that include various combinations of crystalline growth, with and without various post-growth thermal conditioning steps.

A manufacturing method of a nitride semiconductor device includes: introducing a p type impurity into at least a part of an upper layer portion of a first nitride semiconductor layer to form a p type impurity introduction region; forming a second nitride semiconductor layer from an upper surface of the first nitride semiconductor layer so as to include the p type impurity introduction region; and performing an anneal treatment in a state where the second nitride semiconductor layer is formed on the first nitride semiconductor layer.

A manufacturing method of a nitride semiconductor device includes: introducing a p type impurity into at least a part of an upper layer portion of a first nitride semiconductor layer to form a p type impurity introduction region; forming a second nitride semiconductor layer from an upper surface of the first nitride semiconductor layer so as to include the p type impurity introduction region; and performing an anneal treatment in a state where the second nitride semiconductor layer is formed on the first nitride semiconductor layer.

An insert fixture has a base, a plurality of mounting brackets, and a plurality of separators. The plurality of separators extends vertically from the base and includes a plurality of grid portions extending the length of the insert fixture and a plurality of divider portions, which connect to the plurality of grid portions to form a plurality of individual component holders around one of the plurality of mounting brackets. Each individual component holder has two separated grid portion sections positioned on either side of the bracket. These grid portions have two divider portions which are also separated and positioned either side of the bracket at an angle relative to the two grid portions. The individual component holder forms a cell around the mounting bracket. The insert fixture may be constructed from a molybdenum alloy, lanthanum oxide and/or titanium zirconium molybdenum.