Embodiments described herein relate generally to the large scale production of functionalized graphene. In some embodiments, a method for producing functionalized graphene includes combining a crystalline graphite with a first electrolyte solution that includes at least one of a metal hydroxide salt, an oxidizer, and a surfactant. The crystalline graphite is then milled in the presence of the first electrolyte solution for a first time period to produce a thinned intermediate material. The thinned intermediate material is combined with a second electrolyte solution that includes a strong oxidizer and at least one of a metal hydroxide salt, a weak oxidizer, and a surfactant. The thinned intermediate material is then milled in the presence of the second electrolyte solution for a second time period to produce functionalized graphene.

A laser activated luminescence system is provided. Another aspect pertains to a system employing a plasma assisted vapor deposition reactor which creates diamond layers on a substrate, in combination with a laser system to at least photoactivate and anneal the diamond layers. Yet another aspect of the present system uses a laser to assist with placement of color centers, such as nitrogen vacancy centers, in diamond. The present method uses lasers to manufacture more than two activated nitrogen vacancy center nodes in a diamond substrate, with nanometer spatial resolution and at a predetermined depth.

A laser activated luminescence system is provided. Another aspect pertains to a system employing a plasma assisted vapor deposition reactor which creates diamond layers on a substrate, in combination with a laser system to at least photoactivate and anneal the diamond layers. Yet another aspect of the present system uses a laser to assist with placement of color centers, such as nitrogen vacancy centers, in diamond. The present method uses lasers to manufacture more than two activated nitrogen vacancy center nodes in a diamond substrate, with nanometer spatial resolution and at a predetermined depth.

A substrate comprising diamond has NV.sup.- centers in a concentration greater than about 0.5 parts per million (ppm). The method for producing this diamond substrate includes providing diamond being doped with nitrogen, irradiating at least a partial surface of the substrate with radiation that creates vacancies in the diamond, and carrying out a second heat treatment of the substrate at a certain temperature. The substrate can be used as a sensor element of a magnetometer or also as a qubit of a quantum computer

A substrate comprising diamond has NV.sup.- centers in a concentration greater than about 0.5 parts per million (ppm). The method for producing this diamond substrate includes providing diamond being doped with nitrogen, irradiating at least a partial surface of the substrate with radiation that creates vacancies in the diamond, and carrying out a second heat treatment of the substrate at a certain temperature. The substrate can be used as a sensor element of a magnetometer or also as a qubit of a quantum computer

A solid ion conductive material can include a complex metal halide. The complex metal halide can include at least one alkali metal element. In an embodiment, the solid ion conductive material including the complex metal halide can be a single crystal. In another embodiment, the ion conductive material including the complex metal halide can be a crystalline material having a particular crystallographic orientation. A solid electrolyte can include the ion conductive material including the complex metal halide.

A method for manufacturing a semiconductor device includes: preparing a processed wafer having a gallium nitride (GaN) wafer and an epitaxial layer on the GaN wafer; forming a device constituent part in a portion of the processes wafer adjacent to a front surface provided by the epitaxial layer; forming a modified layer inside of the processed wafer by applying a laser beam from a back surface side opposite to the front surface side: and dividing the processed wafer at the modified layer. The processed wafer prepared includes a reflective layer for reflecting the laser beam at a position separated from a planned formation position, where the modified layer is to be formed, by a predetermined distance toward the front surface side. The reflective layer contains a layer having a refractive index different from that of a GaN single crystal of an epitaxial layer.

A method for manufacturing a semiconductor device includes: preparing a processed wafer having a gallium nitride (GaN) wafer and an epitaxial layer on the GaN wafer; forming a device constituent part in a portion of the processes wafer adjacent to a front surface provided by the epitaxial layer; forming a modified layer inside of the processed wafer by applying a laser beam from a back surface side opposite to the front surface side: and dividing the processed wafer at the modified layer. The processed wafer prepared includes a reflective layer for reflecting the laser beam at a position separated from a planned formation position, where the modified layer is to be formed, by a predetermined distance toward the front surface side. The reflective layer contains a layer having a refractive index different from that of a GaN single crystal of an epitaxial layer.

A diamond scanning element, especially for an imaging application, includes a support and a pillar extending from the support. The pillar has a longitudinal axis and the pillar includes a tip with a tapered lateral section with a, preferably constantly, increasing curvature. The tip includes a sensor element, which is a defect, and a flat end facet extending toward the axis with a gradient of less than 10%.

A diamond scanning element, especially for an imaging application, includes a support and a pillar extending from the support. The pillar has a longitudinal axis and the pillar includes a tip with a tapered lateral section with a, preferably constantly, increasing curvature. The tip includes a sensor element, which is a defect, and a flat end facet extending toward the axis with a gradient of less than 10%.