Disclosed is a technology of permanently phase-transiting a semimetal using ion implantation. More particularly, the permanent phase transition of a dirac semimetal into a weyl semimetal can be induced by implanting non-magnetic material ions into the dirac semimetal according to an embodiment.

Provided is a method for forming a chalcogenide thin film, the method including forming a chalcogen element-containing film on a carrier substrate, disposing the chalcogen element-containing film on a silicon wafer, wherein the surface of the silicon wafer and the surface of the chalcogen element-containing film are in contact with each other, performing heat treatment on the silicon wafer and the chalcogen element-containing film at least one time, and removing the carrier substrate. The silicon wafer has a crystal plane of (111).

A method of creating thin wafers of single crystal silicon, sapphire and similar materials, wherein an ingot of single crystalline material, or a ribbon of single crystalline material is cleaved, in a plane parallel to a surface, with laser light focused to a line in the desired plane of cleavage, near the growing cleavage furrow. The light is of a wavelength that the material is transparent to, but for which the material has strong two- or three-photon absorption. Consequently the light is not appreciably absorbed until it reached the desired focal line. The light is presented in an extremely short pulse, which heats and expands the material at the line focus, before the heat can be dissipated. This expansion creates tangential stresses around the focal line. These stresses are designed to be precisely normal to the growing cleavage furrow. Therefore the stresses are able to induce cleavage in the desired plane, without inducing cleavage in other possible cleavage planes that may happen to intersect with the growing cleavage edge. In this way, extremely thin wafers and ribbon shaped wafers can be produced, with extremely high quality cleaved faces. Methods of initiating the cleavage furrow and separating the cleaved wafer from the rest of the crystal are also discussed.

A method of creating thin wafers of single crystal silicon, sapphire and similar materials, wherein an ingot of single crystalline material, or a ribbon of single crystalline material is cleaved, in a plane parallel to a surface, with laser light focused to a line in the desired plane of cleavage, near the growing cleavage furrow. The light is of a wavelength that the material is transparent to, but for which the material has strong two- or three-photon absorption. Consequently the light is not appreciably absorbed until it reached the desired focal line. The light is presented in an extremely short pulse, which heats and expands the material at the line focus, before the heat can be dissipated. This expansion creates tangential stresses around the focal line. These stresses are designed to be precisely normal to the growing cleavage furrow. Therefore the stresses are able to induce cleavage in the desired plane, without inducing cleavage in other possible cleavage planes that may happen to intersect with the growing cleavage edge. In this way, extremely thin wafers and ribbon shaped wafers can be produced, with extremely high quality cleaved faces. Methods of initiating the cleavage furrow and separating the cleaved wafer from the rest of the crystal are also discussed.

A solid ion conductive material can include a complex metal halide. The complex metal halide can include at least one alkali metal element. In an embodiment, the solid ion conductive material including the complex metal halide can be a single crystal. In another embodiment, the ion conductive material including the complex metal halide can be a crystalline material having a particular crystallographic orientation. A solid electrolyte can include the ion conductive material including the complex metal halide.

A diamond powder comprising diamond particles having an average particle size of no more than 20 μm and a vacancy or impurity-vacancy point defect concentration of at least 1 ppm. At least 70% of the volume of diamond in the powder is formed from a single crystal growth sector. This leads to a substantially uniform concentration of vacancies or impurity-vacancy point defects in the diamond particles because the rate of impurity take-up during growth is heavily dependent on the growth sector, which in turn leads to a more uniform fluorescent response. There is also described a method for making such a powder.

A diamond powder comprising diamond particles having an average particle size of no more than 20 μm and a vacancy or impurity-vacancy point defect concentration of at least 1 ppm. At least 70% of the volume of diamond in the powder is formed from a single crystal growth sector. This leads to a substantially uniform concentration of vacancies or impurity-vacancy point defects in the diamond particles because the rate of impurity take-up during growth is heavily dependent on the growth sector, which in turn leads to a more uniform fluorescent response. There is also described a method for making such a powder.

Heterocrystals of metal dichalcogenides and Bi.sub.2S.sub.3, Bi.sub.2Se.sub.3 or Bi.sub.2Te.sub.3 are presented, in which the metal dichalcogenides and Bi.sub.2S.sub.3, Bi.sub.2Se.sub.3 or Bi.sub.2Te.sub.3 do not largely retain their independent properties. These heterocrystals exhibit electronic and optical changes, which make them attractive for beyond-silicon electronics and optoelectronics. Particularly, these heterocrystals can be re-configured in a manner that allows bit writing and pattern drawing. Embodiments of these heterocrystals, methods of forming these heterocrystals, methods of reconfiguring the heterocrystals, information storage devices, optoelectronic circuits and photonic crystals are presented.

Heterocrystals of metal dichalcogenides and Bi.sub.2S.sub.3, Bi.sub.2Se.sub.3 or Bi.sub.2Te.sub.3 are presented, in which the metal dichalcogenides and Bi.sub.2S.sub.3, Bi.sub.2Se.sub.3 or Bi.sub.2Te.sub.3 do not largely retain their independent properties. These heterocrystals exhibit electronic and optical changes, which make them attractive for beyond-silicon electronics and optoelectronics. Particularly, these heterocrystals can be re-configured in a manner that allows bit writing and pattern drawing. Embodiments of these heterocrystals, methods of forming these heterocrystals, methods of reconfiguring the heterocrystals, information storage devices, optoelectronic circuits and photonic crystals are presented.

2D heterostructures comprising Bi.sub.2Se.sub.3/MoS.sub.2, Bi.sub.2Se.sub.3/MoSe.sub.2, Bi.sub.2Se.sub.3/WS.sub.2, Bi.sub.2Se.sub.3/MoSe.sub.2. .sub.2xS.sub.2x, or mixtures thereof in which oxygen is intercalated between the layers at selected positions provide high density storage devices, sensors, and display devices. The properties of the 2D heterostructures can be configured utilizing abeam of electromagnetic waves or particles in an oxygen controlled atmosphere.