A substrate for group-III nitride epitaxial growth and a method for producing the same is capable of fabricating a high-quality group III nitride single crystal at low cost. The substrate for group-III nitride epitaxial growth includes: a supporting substrate having a structure in which a core consisting of nitride ceramics is wrapped in an encapsulating layer having a thickness of between 0.05 μm and 1.5 μm, inclusive; a planarizing layer provided on an upper surface of the supporting substrate, the planarizing layer having a thickness of between 0.5 μm and 3.0 μm, inclusive; and a seed crystal layer consisting of a single crystal with a thickness of between 0.1 μm and 1.5 μm, inclusive, provided on an upper surface planarizing layer and having an uneven pattern on the surface.

It is provided a method of growing a group 13 nitride crystal layer, on an underlying substrate including a seed crystal layer composed of a group 13 nitride. The underlying substrate is immersed in a melt containing a flux to grow a group 13 nitride crystal layer two-dimensionally on a nitrogen polar surface of the seed crystal layer by flux method.

A crystalline material processing method includes forming subsurface laser damage at a first average depth position to form cracks in the substrate interior propagating outward from at least one subsurface laser damage pattern, followed by imaging the substrate top surface, analyzing the image to identify a condition indicative of presence of uncracked regions within the substrate, and taking one or more actions responsive to the analyzing. One potential action includes changing an instruction set for producing subsequent laser damage formation (at second or subsequent average depth positions), without necessarily forming additional damage at the first depth position. Another potential action includes forming additional subsurface laser damage at the first depth position. The substrate surface is illuminated with a diffuse light source arranged perpendicular to a primary substrate flat and positioned to a first side of the substrate, and imaged with an imaging device positioned to an opposing second side of the substrate.

A method for producing a layer of solid material includes: providing a solid body having opposing first and second surfaces, the second surface being part of the layer of solid material; generating defects by means of multiphoton excitation caused by at least one laser beam penetrating into the solid body via the second surface and acting in an inner structure of the solid body to generate a detachment plane, the detachment plane including regions with different concentrations of defects; providing a polymer layer on the solid body; and generating mechanical stress in the solid body such that a crack propagates in the solid body along the detachment plane and the layer of solid material separates from the solid body along the crack.

A dental implant has an implant body made of diamond material, the implant body being provided with a bore hole that has at least one lateral dimension and a depth dimension, the lateral dimension and the depth dimension being mm sized. The bore hole is substantially formed by laser light being directed at the implant body to form said bore hole by softening said diamond material at an intended location of said bore hole. The bore hole is further defined by utilizing at least one metallic drilling tool to remove more of the diamond material after initial formation of the bore hole by said laser light. Preferably, the drilling tool has a cone shaped drilling head or a rectangular drilling head.

A wavelength conversion element manufacturing method capable of realizing, in a wavelength conversion element having a structure in which a thin film substrate having a periodic polarization inversion structure and a support substrate are laminated, highly efficient wavelength conversion by confining light in a cross-sectional area smaller than in the known art. The manufacturing method includes steps of forming a periodic polarization inversion structure on a first substrate made of a second-order nonlinear optical crystal and forming a damage layer in the first substrate by implanting ions from one substrate surface to obtain a first substrate for bonding, directly bonding a second substrate having a bonding surface having a smaller refractive index than the first substrate to the one substrate surface of the first substrate at the bonding surface, and peeling the first substrate directly bonded to the second substrate being the support substrate with the damage layer as a boundary to remove a part of the first substrate.

A crystalline material processing method includes forming subsurface laser damage at a first average depth position to form cracks in the substrate interior propagating outward from at least one subsurface laser damage pattern, followed by imaging the substrate top surface, analyzing the image to identify a condition indicative of presence of uncracked regions within the substrate, and taking one or more actions responsive to the analyzing. One potential action includes changing an instruction set for producing subsequent laser damage formation (at second or subsequent average depth positions), without necessarily forming additional damage at the first depth position. Another potential action includes forming additional subsurface laser damage at the first depth position. The substrate surface is illuminated with a diffuse light source arranged perpendicular to a primary substrate flat and positioned to a first side of the substrate, and imaged with an imaging device positioned to an opposing second side of the substrate.

A method for processing a wide band gap semiconductor wafer includes: depositing a support layer including semiconductor material at a back side of a wide band gap semiconductor wafer, the wide band gap semiconductor wafer having a band gap larger than the band gap of silicon; depositing an epitaxial layer at a front side of the wide band gap semiconductor wafer; and splitting the wide band gap semiconductor wafer along a splitting region to obtain a device wafer comprising at least a part of the epitaxial layer, and a remaining wafer comprising the support layer.

A method of manufacturing a hexagonal Group-III nitride semiconductor plate crystal using a crystal cutting wire. where the hexagonal semiconductor crystal has one principal face on one side and another principal face on an opposite side, and the hexagonal semiconductor crystal is cut by causing the crystal cutting wire to move so as to (i) divide the one principal face and the another principal face and (ii) satisfy conditions of Expressions (A) and (B):
25°<α≤90°  Expression (A); and
β=90°±5°  Expression (B) where α represents an angle formed by a c axis of the hexagonal Group-III nitride semiconductor crystal and a normal line of a crystal face cut out by the wire, and β represents an angle formed by a reference axis, which is obtained by perpendicularly projecting the c axis of the hexagonal Group-III nitride semiconductor crystal to the crystal face cut out by the wire, and a cutting direction.

A method of manufacturing a hexagonal Group-III nitride semiconductor plate crystal using a crystal cutting wire. where the hexagonal semiconductor crystal has one principal face on one side and another principal face on an opposite side, and the hexagonal semiconductor crystal is cut by causing the crystal cutting wire to move so as to (i) divide the one principal face and the another principal face and (ii) satisfy conditions of Expressions (A) and (B):
25°<α≤90°  Expression (A); and
β=90°±5°  Expression (B) where α represents an angle formed by a c axis of the hexagonal Group-III nitride semiconductor crystal and a normal line of a crystal face cut out by the wire, and β represents an angle formed by a reference axis, which is obtained by perpendicularly projecting the c axis of the hexagonal Group-III nitride semiconductor crystal to the crystal face cut out by the wire, and a cutting direction.