A processing method for processing an SiC ingot includes a peel-off zone forming step of applying a processing pulsed laser beam having a wavelength transmittable through the ingot to the ingot while positioning a focused spot of the processing pulsed laser beam at a depth corresponding to a thickness of a wafer to be peeled off from the ingot, to form belt-shaped peel-off zones each including cracks in the ingot, a reflected beam detecting step of applying an inspecting laser beam having a wavelength transmittable through the ingot and reflectable from cracks of the peel-off zones and detecting an intensity of a beam reflected by the cracks, and a processing laser beam output power adjusting step of adjusting an output power of the processing pulsed laser beam to keep the intensity of the reflected beam detected in the reflected beam detecting step within a predetermined range.

A conductive C-plane GaN substrate has a resistivity of 2×10.sup.−2 Ω.Math.cm or less or an n-type carrier concentration of 1×10.sup.18 cm.sup.−3 or more at room temperature. At least one virtual line segment with a length of 40 mm can be drawn at least on one main surface of the substrate. The line segment satisfies at least one of the following conditions (A1) and (B1): (A1) when an XRC of (004) reflection is measured at 1 mm intervals on the line segment, a maximum value of XRC-FWHMs across all measurement points is less than 30 arcsec; and (B1) when an XRC of the (004) reflection is measured at 1 mm intervals on the line segment, a difference between maximum and minimum values of XRC peak angles across all the measurement points is less than 0.2°.

A conductive C-plane GaN substrate has a resistivity of 2×10.sup.−2 Ω.Math.cm or less or an n-type carrier concentration of 1×10.sup.18 cm.sup.−3 or more at room temperature. At least one virtual line segment with a length of 40 mm can be drawn at least on one main surface of the substrate. The line segment satisfies at least one of the following conditions (A1) and (B1): (A1) when an XRC of (004) reflection is measured at 1 mm intervals on the line segment, a maximum value of XRC-FWHMs across all measurement points is less than 30 arcsec; and (B1) when an XRC of the (004) reflection is measured at 1 mm intervals on the line segment, a difference between maximum and minimum values of XRC peak angles across all the measurement points is less than 0.2°.

The technology subject of the present application concerns methods and systems for manufacturing and producing stable polarized or ferroelectric layered materials.

A process for producing a monocrystalline layer of LNO material comprises the transfer of a monocrystalline seed layer of YSZ material to a carrier substrate of silicon material followed by epitaxial growth of the monocrystalline layer of LNO material.

A process for producing a monocrystalline layer of LNO material comprises the transfer of a monocrystalline seed layer of YSZ material to a carrier substrate of silicon material followed by epitaxial growth of the monocrystalline layer of LNO material.

A dental implant has an implant body made of diamond material, the implant body being provided with a bore hole that has at least one lateral dimension and a depth dimension, the lateral dimension and the depth dimension being mm sized. The bore hole is substantially formed by laser light being directed at the implant body to form said bore hole by softening said diamond material at an intended location of said bore hole. The bore hole is further defined by utilizing at least one metallic drilling tool to remove more of the diamond material after initial formation of the bore hole by said laser light. Preferably, the drilling tool has a cone shaped drilling head or a rectangular drilling head.

A method of manufacturing a substrate includes forming a support structure by providing a polycrystalline ceramic core, encapsulating the polycrystalline ceramic core in a first adhesion shell, encapsulating the first adhesion shell in a conductive shell, encapsulating the conductive shell in a second adhesion shell, and encapsulating the second adhesion shell in a barrier shell. The method also includes joining a bonding layer to the support structure, joining a substantially single crystalline silicon layer to the bonding layer, forming an epitaxial silicon layer by epitaxial growth on the substantially single crystalline silicon layer, and forming one or more epitaxial III-V layers by epitaxial growth on the epitaxial silicon layer.

A method of manufacturing a substrate includes forming a support structure by providing a polycrystalline ceramic core, encapsulating the polycrystalline ceramic core in a first adhesion shell, encapsulating the first adhesion shell in a conductive shell, encapsulating the conductive shell in a second adhesion shell, and encapsulating the second adhesion shell in a barrier shell. The method also includes joining a bonding layer to the support structure, joining a substantially single crystalline silicon layer to the bonding layer, forming an epitaxial silicon layer by epitaxial growth on the substantially single crystalline silicon layer, and forming one or more epitaxial III-V layers by epitaxial growth on the epitaxial silicon layer.

The present invention addresses the problem of providing a novel SiC substrate production method. The SiC substrate production method according to the present invention comprises an etching step S10 of etching a SiC base substrate 10, a crystal growth step S20 of growing a SiC substrate layer 13 on the SiC base substrate 10 to produce a SiC substrate body 20, and a peeling step S30 of peeling at least a portion of the SiC substrate body 20 to produce a SiC substrate 30, the method being characterized in that each of the etching step S10 and the crystal growth step S20 is a step of arranging the SiC base substrate 10 and a SiC material 40 so as to face each other and heating the SiC base substrate 10 and the SiC material 40 so as to form a temperature gradient between the SiC base substrate 10 and the SiC material 40.