The disclosure is directed to a method to recover the gate oxide integrity yield of a silicon wafer after rapid thermal anneal in an ambient atmosphere comprising a nitrogen containing gas, such as NH.sub.3 or N.sub.2. Generally, rapid thermal anneals in an ambient atmosphere comprising a nitrogen containing gas, such as NH.sub.3 or N.sub.2 to thereby imprint an oxygen precipitate profile can degrade the GOI yield of a silicon wafer by exposing as-grown crystal defects (oxygen precipitate) and vacancies generated by the silicon nitride film. The present invention restores GOI yield by stripping the silicon nitride layer, which is followed by wafer oxidation, which is followed by stripping the silicon oxide layer.

The disclosure is directed to a method to recover the gate oxide integrity yield of a silicon wafer after rapid thermal anneal in an ambient atmosphere comprising a nitrogen containing gas, such as NH.sub.3 or N.sub.2. Generally, rapid thermal anneals in an ambient atmosphere comprising a nitrogen containing gas, such as NH.sub.3 or N.sub.2 to thereby imprint an oxygen precipitate profile can degrade the GOI yield of a silicon wafer by exposing as-grown crystal defects (oxygen precipitate) and vacancies generated by the silicon nitride film. The present invention restores GOI yield by stripping the silicon nitride layer, which is followed by wafer oxidation, which is followed by stripping the silicon oxide layer.

A method of processing silicon carbide containing crystalline substrate is provided. The method includes pyrolyzing a surface of the silicon carbide containing crystalline substrate to produce a silicon and carbon containing debris layer over the silicon carbide containing crystalline substrate, and removing the silicon and carbon containing debris layer, wherein the pyrolyzing and the removing is repeated at least once.

A device includes a semiconductor substrate containing gallium nitride and having a crystal face inclined from 0.05 to 15 inclusive with respect to the c-plane. The semiconductor substrate includes an irregular portion on the crystal face, and the contact angle of pure water having a specific resistance of 18 M.Math.cm or more on the surface of the irregular portion is 10 or less.

A device includes a semiconductor substrate containing gallium nitride and having a crystal face inclined from 0.05 to 15 inclusive with respect to the c-plane. The semiconductor substrate includes an irregular portion on the crystal face, and the contact angle of pure water having a specific resistance of 18 M.Math.cm or more on the surface of the irregular portion is 10 or less.

The disclosure is directed to a method to recover the gate oxide integrity yield of a silicon wafer after rapid thermal anneal in an ambient atmosphere comprising a nitrogen containing gas, such as NH.sub.3 or N.sub.2. Generally, rapid thermal anneals in an ambient atmosphere comprising a nitrogen containing gas, such as NH.sub.3 or N.sub.2 to thereby imprint an oxygen precipitate profile can degrade the GOI yield of a silicon wafer by exposing as-grown crystal defects (oxygen precipitate) and vacancies generated by the silicon nitride film. The present invention restores GOI yield by stripping the silicon nitride layer, which is followed by wafer oxidation, which is followed by stripping the silicon oxide layer.

The disclosure is directed to a method to recover the gate oxide integrity yield of a silicon wafer after rapid thermal anneal in an ambient atmosphere comprising a nitrogen containing gas, such as NH.sub.3 or N.sub.2. Generally, rapid thermal anneals in an ambient atmosphere comprising a nitrogen containing gas, such as NH.sub.3 or N.sub.2 to thereby imprint an oxygen precipitate profile can degrade the GOI yield of a silicon wafer by exposing as-grown crystal defects (oxygen precipitate) and vacancies generated by the silicon nitride film. The present invention restores GOI yield by stripping the silicon nitride layer, which is followed by wafer oxidation, which is followed by stripping the silicon oxide layer.

Provided is a silicon substrate processing method including: providing a silicon substrate with a sacrificial layer formed in the form of an island on the front surface thereof, the front surface being a surface on a side where the flow path of an ejection port for ejecting liquid is to be formed, the sacrificial layer having a higher etching rate than the silicon substrate; forming a mask layer on the back surface, the back surface being a surface opposite from the front surface, the mask layer being a layer that does not include an opening at a portion of the back surface opposite from the sacrificial layer; forming a non-penetrating hole from an opening on the back surface of the silicon substrate; and forming a beam on the back surface side by performing anisotropic etching on the silicon substrate in which the non-penetrating hole is formed.

Provided is a silicon substrate processing method including: providing a silicon substrate with a sacrificial layer formed in the form of an island on the front surface thereof, the front surface being a surface on a side where the flow path of an ejection port for ejecting liquid is to be formed, the sacrificial layer having a higher etching rate than the silicon substrate; forming a mask layer on the back surface, the back surface being a surface opposite from the front surface, the mask layer being a layer that does not include an opening at a portion of the back surface opposite from the sacrificial layer; forming a non-penetrating hole from an opening on the back surface of the silicon substrate; and forming a beam on the back surface side by performing anisotropic etching on the silicon substrate in which the non-penetrating hole is formed.

A device includes a semiconductor substrate containing gallium nitride and having a crystal face inclined from 0.05 to 15 inclusive with respect to the c-plane. The semiconductor substrate includes an irregular portion on the crystal face, and the contact angle of pure water having a specific resistance of 18 M.Math.cm or more on the surface of the irregular portion is 10 or less.