A system for manufacturing one or more single crystals of a semiconductor material by physical vapor transport (PVT) includes a reactor having an inner chamber adapted to accommodate a PVT growth structure for growing the one or more single crystals inside. The reactor accommodates the PVT growth structure in an orientation with a growth direction of the one or more single crystals inside the PVT growth structure substantially horizontal with respect to a direction of gravity or within an angle from horizontal of less than a predetermined value.

A system for simultaneously manufacturing more than one single crystal of a semiconductor material by physical vapor transport (PVT) includes a plurality of reactors and a common vacuum channel connecting at least a pair of reactors of the plurality of reactors. Each reactor has an inner chamber adapted to accommodate a PVT growth structure for growth of a single semiconductor crystal. The common vacuum channel is connectable to a vacuum pump system for creating and/or controlling a common gas phase condition in the inner chambers of the pair of reactors.

Methods for producing a single crystal silicon ingot are disclosed. The ingot is doped with boron using solid-phase boric acid as the source of boron. Boric acid may be used to counter-dope the ingot during ingot growth. Ingot puller apparatus that use a solid-phase dopant are also disclosed. The solid-phase dopant may be disposed in a receptacle that is moved closer to the surface of the melt or a vaporization unit may be used to produce a dopant gas from the solid-phase dopant.

Provided is a single crystal growth crucible including a first housing and a second housing, in which a fitting portion between the first housing and the second housing has a first protruding portion, which is provided by protruding inner wall side of the first housing toward the second housing, and a second protruding portion, which is provided by protruding outer wall side of the second housing toward the first housing and covers an outer circumferential surface of the first protruding portion, the first protruding portion is formed such that an outer diameter of a tip portion thereof is larger than that of a base portion thereof in the protruding direction, and the second protruding portion is formed such that an inner diameter of a tip portion thereof is smaller than that of a base portion thereof in the protruding direction, the outer diameter of the tip portion of the first protruding portion is equal to or smaller than the inner diameter of the tip portion of the second protruding portion at room temperature, and the outer diameter of the tip portion of the first protruding portion is larger than the inner diameter of the tip portion of the second protruding portion at a single crystal growth temperature.

A method for forming an isolating layer of a crucible includes placing a round crucible sideways with a bottom surface of an inside thereof perpendicular to a horizontal plane, and then performing a plurality of spraying processes to form the isolating layer on the bottom surface and a wall surface of the round crucible. Each spraying process includes spraying a slurry on the bottom surface; using an optical positioner to set a spraying range the same as one of a plurality of partial areas divided from the wall surface; aligning one of the plurality of partial areas with the spraying range; fixing the round crucible and spraying the slurry in the spraying range; stopping the spraying; and rotating the round crucible to move another partial area to the spraying range. Then, the steps are repeated until the spraying of all the partial areas is completed.

A silica glass crucible includes a cylindrical side wall portion, a curved bottom portion, and a corner portion that is provided between the side wall portion and the bottom portion and has a higher curvature than a curvature of the bottom portion, in which a first region provided from a crucible inner surface to a middle in a thickness direction, a second region that is provided outside the first region in the thickness direction and has a different strain distribution from the first region, and a third region that is provided outside the second region in the thickness direction and up to the crucible outer surface and has a different strain distribution from the second region, are provided, and internal residual stresses of the first region and the third region are compressive stresses, whereas an internal residual stress of the second region includes a tensile stress.

The molybdenum crucible includes a cylindrical side wall and a bottom provided integrally with one end of the side wall. The side wall includes a coarse grain region configured to extend from an outer wall toward an inner wall and a fine grain region configured to extend from the inner wall toward the outer wall so as to be in contact with the coarse grain region. The ratio of the coarse grain region in the side wall in the thickness direction thereof is 10% or more and less than 90%. The coarse grain region is defined as such a region in which crystal grains having a grain size of 1 mm or more determined by an intercept method in the height direction of the crucible occupy 95% or more of an area of a measurement region.

An apparatus for the manufacture of synthetic diamonds includes a pressure vessel having a chamber therein, and a body located in the chamber. The pressure vessel and the body are formed of materials having different coefficients of expansion. The coefficient of expansion of the body is greater than the coefficient of expansion of the pressure vessel. The pressure vessel is formed from a material having a melting point in excess of 1327 C. and capable of withstanding a pressure of at least 4.4 Gpa at a temperature of at least 1327 C. The chamber is configured to receive the body, and a carbon source, the apparatus further comprising a heating means configured to heat at least the body to a temperature at least of 1327 C. The coefficient of expansion of the body is selected such that upon heating thereof to at least 1327 C. the pressure exerted on the carbon source is at least 4.4 Gpa.

A crucible includes a wall made of a base material of tungsten or molybdenum or of a material based on tungsten or molybdenum. A barrier layer is disposed at least in sections on an outer side of the wall and/or in the wall. The barrier layer is made of a metallic material having a greater affinity for carbon and/or oxygen than the base material. A method for using a crucible for producing single-crystal sapphire or fused quartz and a method for producing a crucible for high-temperature applications are also provided.

The invention relates to a crucible for crystal growth and a method for releasing thermal stress of silicon carbide crystals. The crucible is a crucible in contact with the side surface of the prepared crystals, and the crucible has an annular non-closed splicing structure. The crucible for the crystal growth has the annular non-closed splicing structure, so that the crystals can be prevented from being hooped, hot stress concentrated in the crystals in the growth process of the crystals can be effectively released, the fracturing rate of the crystals can be reduced, and the finished product rate of the crystals can be increased.