A method for producing articles from iridium metal nanopowder. This invention relates to the sphere of powder metallurgy and may find application in the production of different articles from iridium. Technically, the object of the invention is development of a new technology. To this aim a method is proposed for the production of articles from iridium based on use of chemically pure metal of not less than 99.99 purity, produced by electron-beam remelting, characterized in that the required material is turned to nanopowder of less than 100 nm dispersity from which seamless articles of various configuration are molded by their compacting at room temperature followed by baking, with the resulting isotropic structure featuring 100-300 nm grain size and strength characteristics being improved by 200-300%.

According to the invention, a SiC single crystal growth crucible includes: a raw material accommodation portion which accommodates a SiC raw material; and a seed crystal support portion which supports a seed crystal disposed on an upper portion of the raw material accommodation portion, in which the raw material accommodation portion has a tapered portion, an inner surface of which is tapered off downward.

Conditioning of tungsten pentachloride to form specific crystalline phases is disclosed. The specific crystalline phases permit stable vapor pressures over extended periods of time during vapor deposition and etching processes.

An apparatus for producing an ingot includes a crucible body having an opening and in which raw materials are accommodated, and a lid assembly located at the opening and having a portion fixed to the crucible body. The lid assembly includes a placement hole having open upper and lower ends, a frame member arranged along a periphery of the opening while surrounding a periphery of the placement hole, and a core member located in the placement hole and movable upward and downward with respect to the frame member.

A SiC single crystal manufacturing apparatus of the present invention includes a growth container having a growth space in which a SiC single crystal is grown in a first direction and a heat insulating material which covers the growth container and includes a plurality of units, and the plurality of units include a first unit and a second unit having at least a thermal conductivity different from that of the first unit, and the first unit includes a container made of at least one of graphite and a metal carbide and a filler filled into the container in a replaceable manner.

The present invention relates to a silica-glass crucible for pulling up single-crystal silicon therefrom by Czochralski method (CZ method) or for melting an optical-glass, which includes a crystallization promoter, and method of producing the silica-glass crucible in which a raw-material silica powder including Al and Ca at a specific molar concentration ratio is molded.

A crystal growing apparatus includes: a crucible which includes a main body portion, and a first portion having a radiation rate different from that of the main body portion, and is capable of controlling a temperature of a specific region inside during heating to a higher or lower temperature than that of the other regions; and a heating unit which is positioned on the outside of the crucible and is configured to heat the crucible by radiant heat, and the first portion is at a position where the crucible and a line segment connecting a heating center of the heating unit and the specific region intersect with each other.

A crystal growing apparatus includes: a crucible including a main body portion and a low radiation portion having a radiation rate lower than that of the main body portion; and a heating unit which is positioned on the outside of the crucible and is configured to heat the crucible by radiant heat, and the low radiation portion is provided on an outer surface of a first point which is a heating center, in a case where the crucible does not include the low radiation portion.

A SiC epitaxial growth apparatus according to an embodiment includes a mounting stand on which a SiC wafer is mounted, and a furnace body which is configured to cover the mounting stand, and the furnace body includes a raw material gas supply port which is positioned so as to face the mounting stand and is configured to supply a raw material gas to the growth space, a first purge gas supply port which surrounds a vicinity of the raw material gas supply port and is configured to supply a purge gas to the growth space, and a second purge gas supply port which surrounds a vicinity of the first purge gas supply port and is configured to supply a purge gas to the growth space.

A cold crucible structure according to an embodiment of the present invention includes a cold crucible structure according to an embodiment of the present invention includes: a cold crucible unit including hollow top and bottom caps, a plurality of segments connecting the top cap and the bottom cap, slits disposed between the segments, and a reaction area surrounded by the segments; and an induction coil unit disposed to cover the outer side of the cold crucible unit and disposed across the longitudinal directions of the segments and the slits, in which the diameter of the reaction area is defined as a crucible diameter, the crucible diameter is 100 to 300 mm, and gaps of the slits are defined by

[00001]$d_{\mathrm{slit}}0.3\frac{}{50}$

(mm)(where d.sub.slit is the gap between the slits and is the crucible diameter).