The embodiments described herein generally relate to a stem assembly for coupling a susceptor to a process chamber. The stem assembly includes a pivot mechanism, a first flexible seal coupled to the pivot mechanism, a second flexible seal coupled to a plate on a first side of the plate, the plate having a second side coupled to the first flexible seal, a housing coupled to the second flexible seal, and a motion assembly adapted to move the housing in an X axis and a Y axis, and position the susceptor angularly relative to an X-Y plane of the process chamber.

The embodiments described herein generally relate to a stem assembly for coupling a susceptor to a process chamber. The stem assembly includes a pivot mechanism, a first flexible seal coupled to the pivot mechanism, a second flexible seal coupled to a plate on a first side of the plate, the plate having a second side coupled to the first flexible seal, a housing coupled to the second flexible seal, and a motion assembly adapted to move the housing in an X axis and a Y axis, and position the susceptor angularly relative to an X-Y plane of the process chamber.

The embodiments described herein generally relate to a stem assembly for coupling a susceptor to a process chamber. The stem assembly includes a pivot mechanism, a first flexible seal coupled to the pivot mechanism, a second flexible seal coupled to a plate on a first side of the plate, the plate having a second side coupled to the first flexible seal, a housing coupled to the second flexible seal, and a motion assembly adapted to move the housing in an X axis and a Y axis, and position the susceptor angularly relative to an X-Y plane of the process chamber.

A roller guide assembly for use in lifting a seed coupled to a cable includes a mounting plate, a shaft, and a roller guide. The mounting plate has a throughhole. The shaft is coupled to the mounting plate such that the shaft is movable relative to the mounting plate in a direction that is generally perpendicular to a central axis of the shaft. The roller guide is rotationally coupled about the shaft and generally positioned within the throughhole of the mounting plate such that at least a portion of the roller guide extends out of the throughhole.

A cyclical epitaxial deposition system and a gas distribution module are provided. The gas distribution module includes an inflow element having a plurality of inlet holes, a guide assembly, and an outflow element. The guide assembly disposed between the inflow and outflow elements includes a plurality of guide channels separate from one another and a plurality of temporary gas retention trenches respectively corresponding to the guide channels. Each of the guide channels is in fluid communication with the corresponding inlet hole. The outflow element has a plurality of diffusion regions respectively corresponding to the gas retention trenches, and a plurality of outlet channels respectively corresponding to the diffusion regions. Each of the diffusion regions has a plurality of diffusion apertures, and each of the temporary gas retention trenches is in fluid communication with the corresponding outlet channel through the diffusion apertures in the corresponding diffusion region.

A method for producing metal oxide nanocrystals, according to the embodiment of the present invention, includes: continuously flowing, into a continuous flow path, one or a plurality of nanocrystal precursor solutions each comprising one or more nanocrystal precursors dissolved in a non-polar solvent; directing a segmenting gas into the continuous flow path to create a segmented reaction flow; flowing the segmented reaction flow into a thermal processor; heating the segmented reaction flow in the thermal processor to create a product flow; and collecting metal oxide nanocrystals from the product flow.

The present invention discloses a method for carrying out phosphide in-situ injection synthesis by carrier gas, relating to a synthetic method of semiconductor crystal: step A, shielding inert gas is introduced into a furnace body through a carrier gas intake conduit; step B, a crucible is heated in the furnace body to melt a pre-synthesized raw material in the crucible; step C, the heated shielding inert gas is introduced into the furnace body through the carrier gas intake conduit; step D, a phosphorus source furnace loaded with red phosphorus is moved downwards until an injection conduit of the phosphorus source furnace is submerged in the melt; step E, the red phosphorus is heated by the phosphorus source furnace to produce phosphorus gas, and the phosphorus gas is mixed with the shielding inert gas and then injected into the melt through the injection conduit, and the phosphorus gas reacts with the melt to produce phosphide; and step F, each device is turned off after the synthesis is finished. In the present invention in the synthesis process, the shielding inert gas is introduced through the carrier gas intake conduit to enable the phosphorus gas to be stably injected into the melt, so that the melt is prevented from being sucked back into the phosphorus source furnace after the volatile element gas is completely absorbed.

The present invention discloses a method for carrying out phosphide in-situ injection synthesis by carrier gas, relating to a synthetic method of semiconductor crystal: step A, shielding inert gas is introduced into a furnace body through a carrier gas intake conduit; step B, a crucible is heated in the furnace body to melt a pre-synthesized raw material in the crucible; step C, the heated shielding inert gas is introduced into the furnace body through the carrier gas intake conduit; step D, a phosphorus source furnace loaded with red phosphorus is moved downwards until an injection conduit of the phosphorus source furnace is submerged in the melt; step E, the red phosphorus is heated by the phosphorus source furnace to produce phosphorus gas, and the phosphorus gas is mixed with the shielding inert gas and then injected into the melt through the injection conduit, and the phosphorus gas reacts with the melt to produce phosphide; and step F, each device is turned off after the synthesis is finished. In the present invention in the synthesis process, the shielding inert gas is introduced through the carrier gas intake conduit to enable the phosphorus gas to be stably injected into the melt, so that the melt is prevented from being sucked back into the phosphorus source furnace after the volatile element gas is completely absorbed.

A method for producing a metal oxide nanocrystals according to the embodiment of the present invention comprises continuously flowing a nanocrystal precursor solution comprising a nanocrystal precursor into a continuous flow path and heating the nanocrystal precursor solution in the continuous flow path to create nanocrystals, comprising: providing a nanocrystal precursor solution supply unit that is connected to the continuous flow path and comprises a first vessel and a second vessel; delivering a nanocrystal precursor solution in the second vessel to the continuous low path; and creating a nanocrystal precursor solution in the first vessel as a different batch from the nanocrystal precursor solution in the second vessel.

A feed assembly supplies polysilicon to a growth chamber for growing a crystal ingot from a melt. An example system includes a housing having support rails for receiving one of a granular tray and a chunk tray and a feed material reservoir positioned above the support rails to selectively feed one of either the granular tray or the chunk tray. A valve mechanism and pulse vibrator are also disclosed.