There are provided a phosphor which is a divalent europium-activated oxynitride phosphor substantially represented by General formula (A): Eu.sub.aSi.sub.bAl.sub.cO.sub.dN.sub.e, a divalent europium-activated oxynitride phosphor substantially represented by General formula (B): MI.sub.fEu.sub.gSi.sub.hAl.sub.kO.sub.mN.sub.n or a divalent europium-activated nitride phosphor substantially represented by General formula (C): (MII.sub.1-pEu.sub.p)MIIISiN.sub.3, having a reflectance of light emission in a longer wavelength region of visible light than a peak wavelength of 95% or larger, and a method of producing such phosphor; a nitride phosphor and an oxynitride phosphor which emit light efficiently and stably by the light having a wavelength ranging from 430 to 480 nm from a semiconductor light emitting device by means of a light emitting apparatus using such phosphor, and a producing method of such phosphor; and a light emitting apparatus having stable characteristics and realizing high efficiency.

This ScAlN laminate includes a substrate, an intermediate layer formed on the substrate and a ScAlN thin film formed on the intermediate layer, and a nearest neighbor distance, which is a distance between atoms closest to each other in a lattice plane parallel to a surface of the intermediate layer, is shorter than the a-axis length of the ScAlN thin film.

A nitride near-infrared fluorescent material has a general molecular formula of the nitride near-infrared fluorescent material is (Ca.sub.1?x?y?zSr.sub.xBa.sub.yEu.sub.z).sub.3[Li.sub.aMg.sub.bAl.sub.cSi.sub.d]N.sub.6. In the general molecular formula, 0?x<1; 0?y?0.3; 0<z?0.02; 3.4?a?4; 0?b?0.2; 0?c?0.4; 1.8?d?2; a+2b+3c+4d=12. The material can be adjusted and controlled to achieve a maximum emission peak wavelength of 830 nm, a maximum half-peak width of 4283 cm.sup.?1, and a quantum yield of 77%.

The present invention is directed to compositions comprising at least one layer or at least two layers, each layer comprising a substantially two-dimensional array of crystal cells, having first and second surfaces, each crystal cell having the empirical formula of M.sub.n+1X.sub.n, where M, X, and n are described in the specification, and devices incorporating these compositions.

Provided a method for producing a nitride phosphor. The method includes preparing a mixture that comprises a first nitride and a cerium source, the first nitride comprising, as a host crystal, a crystal having the same crystal structure as CaAlSiN.sub.3; and performing a heat treatment of the mixture at a temperature of 1,300? C. to 1,900? C. to obtain a second nitride. The first nitride comprises aluminum, silicon, nitrogen, and at least one selected from the group consisting of lithium, calcium, and strontium.

A method of making a layered MXene material comprises a) introducing dried MAX phase powder into a vessel under anhydrous, inert conditions, the MAX phase powder comprising a general formula of M.sub.n+1AX.sub.n (n=1, 2, 3, or 4), wherein M is a transition metal or p-block metalloid selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Re, Cu, Ni, Ag, Zn, Cd, In, Sn, and Pb; interlayer A is a Group III, IV, or V metalloid selected from the group consisting of Al, Si, Ga, Ge, In, Sn, Pb, As, Bi, Sb, and X is one of C (carbon) and N (nitrogen); b) introducing a halogen and solvent to the dried MAX phase to create a halogen solution having a predetermined concentration; c) allowing a reaction to proceed for about 24 hours between 30-90? C. to create a reaction slurry comprising a MXene material.

The present invention provides a zinc nitride compound suitable for electronic devices such as high-speed transistors, high-efficiency visible light-emitting devices, high-efficiency solar cells, and high-sensitivity visible light sensors. The zinc nitride compound is represented, for example, by the chemical formula CaZn.sub.2N.sub.2 or the chemical formula X.sup.1.sub.2ZnN.sub.2 wherein X.sup.1 is Be or Mg. The zinc nitride compound is preferably synthesized at a high pressure of 1 GPa or more.

A gettered polycrystalline group III metal nitride is formed by heating a group III metal with an added getter in a nitrogen-containing gas. Most of the residual oxygen in the gettered polycrystalline nitride is chemically bound by the getter. The gettered polycrystalline group III metal nitride is useful as a raw material for ammonothermal growth of bulk group III nitride crystals.

Methods of forming conformal low temperature gate oxides on a HV I/O and a core logic and the resulting devices are provided. Embodiments include providing a HV I/O and core logic laterally separated on a Si substrate, each having a fin; forming a gate oxide layer over each fin and the Si substrate; forming a silicon oxy-nitride layer over the gate oxide layer; forming a sacrificial oxide layer over the silicon oxy-nitride layer; removing the sacrificial oxide and silicon oxy-nitride layers and thinning the gate oxide layer; forming a second gate oxide layer over the thinned gate oxide layer; forming a silicon oxy-nitride layer over the second gate oxide layer; removing the silicon oxy-nitride and second gate oxide layers over the core logic fin portion; forming an IL over the core logic fin portion; and forming a HfO.sub.x layer over the second silicon oxy-nitride layer and ILs.

A phosphor includes a nitride including an alkaline-earth metal element, silicon, and an activator element, wherein the phosphor has a volume average particle diameter ranging from about 50 nm to about 400 nm, and an internal quantum efficiency of greater than or equal to about 60% at an excitation wavelength of 450 nm, the phosphor is represented by a formula M.sub.2Si.sub.5N.sub.8, the M includes one or more alkaline-earth metal element selected from Ca, Sr, Ba, and Mg and including at least Sr, and one or more activator element selected from Eu and Ce and including at least Eu, an amount of the Sr included in the phosphor is about 15 mol % to about 99 mol % based on total moles of the M, and an amount of the activator element included in the phosphor is about 1 mol % to 20 mol % based on the total moles of the M.