A method can be used for producing a powdery precursor material for an optoelectronic component having a first phase of the following general composition (Ca.sub.1-a-b-c-d-eZn.sub.dMg.sub.eSr.sub.cBa.sub.bX.sub.a).sub.2Si.sub.5N.sub.8, wherein X is an activator that is selected from the group of the lanthanoids and wherein the following applies: 0<a<1 and 0≦b≦1 and 0≦c≦ and 0≦d≦1 and 0≦e≦1. The method includes producing a powdery mixture of starting materials. The starting materials comprise ions of the aforementioned composition. At least silicon nitride having a specific surface area greater than or equal to 9 m/g is selected as a starting material and wherein the silicon nitride comprises alpha silicon nitride or is amorphous. The method also includes heat-treating the mixture under a protective gas atmosphere.

Phosphors include a CaAlSiN.sub.3 family crystal phase, wherein the CaAlSiN.sub.3 family crystal phase comprises at least one element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb.

This application relates to monolayers of Si.sub.2BN or C.sub.2BN, arranged in a graphiticized hexagonal arrangement. Each Si/C atom has a Si/C, B, and N nearest neighbor, while each B (N) has two Si/C's and one N (B) as nearest neighbors. The monolayer can be a 2D composition or can be “rolled” into a nanotubular 3D arm-chair or zig-zag configuration.

A steel processing line includes a dip tub and a stab roll. The dip tub is filled with a quantity of molten metal. At least a portion of the stab roll is submerged in the quantity of molten metal. The stab roll includes two journals. Each journal is received by an opening defined by a roller sleeve including a ceramic or refractory material. The roller sleeve is disposed between each journal and a bearing block. An inner dimension of each roller sleeve and an outer dimension of each respective journal defines a clearance. The inner dimension of each roller sleeve and the outer dimension of each respective journal is configured such that the clearance persists as the stab roll and the pair of roller sleeves are heated by the molten metal. Alternatively, inserts are fastened to an outer surface of each journal in lieu of the roller sleeves.

Phosphors include a CaAlSiN.sub.3 family crystal phase, wherein the CaAlSiN.sub.3 family crystal phase comprises at least one element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb.

The present disclosure is directed to antennas for transmitting and/or receiving electrical signals comprising a MXene composition, devices comprising these antennas, and methods of transmitting and receiving signals using these antennas.

Provided is a nitride semiconductor light emitting element which has good luminous efficiency by suppressing deep-level emission and increasing the monochromaticity. A nitride semiconductor light emitting element according to the present invention comprises an active layer between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer. The n-type nitride semiconductor layer contains Al.sub.X1In.sub.X2Ga.sub.X3N (wherein 0<X1≦1, 0≦X2<1, 0≦X3<1, X1+X2+X3=1), and both the concentration of C contained therein and the concentration of O contained therein are less than or equal to 1×10.sup.17/cm.sup.3.

The present disclosure is directed to compositions comprising at least one layer having first and second surfaces, each layer comprising: a substantially two-dimensional array of crystal cells, each crystal cell having an empirical formula of M′.sub.2M″nX.sub.n+1, such that each X is positioned within an octahedral array of M′ and M″; wherein M′ and M″ each comprise different Group 11113, WE, VB, or VIB metals; each X is C, N, or a combination thereof; n=1 or 2; and wherein the M′ atoms are substantially present as two-dimensional outer arrays of atoms within the two-dimensional array of crystal cells; the M″ atoms are substantially present as two-dimensional inner arrays of atoms within the two-dimensional array of crystal cells; and the two dimensional inner arrays of M″ atoms are sandwiched between the two-dimensional outer arrays of M′ atoms within the two-dimensional army of crystal cells.

A group III nitride crystal, wherein the group III nitride crystal is doped with an N-type dopant and a hydrogen element, and the concentration of the N-type dopant is 1×10.sup.20 cm.sup.−3 or more, and the concentration of the hydrogen element is 1×10.sup.19 cm.sup.−3 or more.

A nitride fluorescent material represented by General Formula: MAlSiN.sub.3 (M=Ca, Sr) in which a part of M is substituted with Eu and a main crystal phase has the same structure as that of a CaAlSiN.sub.3 crystal phase, in which a light emission peak wavelength is 640 nm or more, and a half width of the light emission peak wavelength is 80 nm or less.