Patent classifications
C01B21/0605
Catalyst solvents for carbon nitride
In one embodiment, a method of producing an sp3 bonded C.sub.3N.sub.4 product includes contacting a starting material with a catalyst solvent in a reaction vessel, heating the reaction vessel to a temperature of 900? to 2000? C. under a pressure of 4 to 8 GPa, melting at least some of the catalyst solvent, and transforming at least some of the sp2 bonded C.sub.3N.sub.4 into sp3 hybridized C.sub.3N.sub.4. The starting material may include sp2 bonded C.sub.3N.sub.4. The catalyst solvent may be a solid at room temperature. In one example, the catalyst solvent is a carbo-nitride based catalyst solvent including a first compound having the chemical formula A.sub.xB.sub.yN.sub.z and a second compound having the chemical formula D.sub.qE.sub.rC.sub.s. In a second example, the catalyst solvent is a metal alloy based catalyst solvent including a compound having the chemical formula G.sub.xH.sub.y.
SYNTHESIS OF A MESOPOROUS THREE DIMENSIONAL CARBON NITRIDE DERIVED FROM CYANAMIDE AND ITS USE IN THE KNOEVENAGEL REACTION
Mesoporous graphitic carbon nitride (MGCN) materials and method of making said MGCN materials is described. The MGCN materials include a three dimensional cyanamide based carbon nitride matrix having tunable pore diameters, a pore volume between 0.40 and 0.80 cm.sup.3 g.sup.1, and a surface area of 195 to 300 m.sup.2 gm.sup.1. The matrix comprises sheets of three dimensionally arranged s-heptazine (tri-s-triazine) units. The MGCN materials are used as catalysts in aldol condensation reactions, in particular Knoevenagel reactions. The mesoporous structure is obtained by means of a silica template like KIT-6, which is removed after polymerisation of the cyanamide monomers.
ROD-SHAPED MESOPOROUS CARBON NITRIDE MATERIALS AND USES THEREOF
Methods of producing rod-shaped mesoporous carbon nitride (MCN) materials are described. The method includes (a) obtaining a template reactant mixture comprising an uncalcined rod-shaped SBA-15 template, a carbon source compound, and a nitrogen source compound; (b) subjecting the template reactant mixture to conditions suitable to form a rod-shaped template carbon nitride composite; (c) heating the rod-shaped template carbon nitride composite to a temperature of at least 500 C. to form a rod-shaped mesoporous carbon nitride material/SB A-15 (MCN-SBA-15) complex; and (d) removing the SBA-15 template from the MCN-SBA-15 complex to produce a rod-shaped mesoporous carbon nitride material.
HOLLOW POROUS CARBON NITRIDE NANOSPHERES COMPOSITE LOADED WITH AGBR NANOPARTICLES, PREPARATION METHOD THEREOF, AND ITS APPLICATION IN DYE DEGRADATION
A hollow porous carbon nitride nanospheres composite loaded with AgBr nanoparticles, preparation method thereof, and its application in dye degradation are disclosed. Using silica nanosphere with core-shell structure as a template and hydrogen cyanamide as precursor, melting to enter the pores of mesoporous silica, after calcination, the silica template is etched with ammonium bifluoride to obtain hollow porous carbon nitride nanospheres; dispersing hollow porous carbon nitride nanospheres in deionized water, adding silver nitrate and sodium bromide in sequence, and obtaining silver bromide nanoparticles by in-situ ion exchange method, stirring, washing and centrifuging to obtain the hollow porous carbon nitride nanospheres composite. The hollow porous carbon nitride prepared by the template method has good photocatalytic effect on dye degradation after composite with silver bromide; and it has the advantages of easy production of raw materials, good stability, reusability, etc. It has application prospects in the treatment of dyes.
Methods of producing heterodiamond and apparatus therefor
A combinatorial synthesis of a heterodiamond unit cell, which entails a step of reacting a tetrahedranoidal molecule with a heteroatom to form heterodiamond unit cell and then heterodiamond mass.
G-C3N4 film
In order to provide g-C.sub.3N.sub.4 capable of being simply and easily handled, a g-C.sub.3N.sub.4 film is produced by heating, as a starting material, a compound represented by X.sup.+.sub.mY.sup.m, wherein X.sup.+ is a guanidium ion or the like ion, and Y.sup.m is an anion, to vaporize the compound or its reactant, and depositing the compound or the reactant over a surface of a base material heated, the surface carrying negative electric charges or having electrons, so that the compound or the reactant is polymerized on the base material to generate g-C.sub.3N.sub.4.
Organic solar cell and preparation method thereof
An organic solar cell device is provided, including a first electrode, a photoactive layer, a hole transport layer, and a second electrode that are stacked successively. The photoactive layer includes an electron receptor material and an electron donor material. The electron receptor material is graphene nitride that forms a foamy film on the first electrode and has a three-dimensional network structure. A part of the electron donor material permeates into the graphene nitride, and a part of the electron donor material is enriched on a side of the hole transport layer to form an electron donor enriched layer.
Scalable multiple-inverse diffusion flame burner for synthesis and processing of carbon-based and other nanostructured materials and films and fuels
Apparatus and methods of use thereof for the production of carbon-based and other nanostructures, as well as fuels and reformed products, are provided.
Semiconductor film and method of forming the same
A method of forming a semiconductor film at pressure between 10.sup.?5 atm and 10 atm in the presence of a substrate includes (i) providing a precursor material in a reaction container; (ii) arranging the substrate on the reaction container such that a conductive surface of the substrate is facing towards the precursor material; and (iii) conducting a heat treatment to deposit a semiconductor layer on the conductive surface of the substrate. A semiconductor film is obtained from this method and a device comprising such semiconductor film is also provided.
Preparation method of carbon nitride electrode material
The invention discloses a preparation method of a carbon nitride (CN) electrode material. The preparation method comprises the following steps: (1) preparing a precursor film: immersing a clean conductive substrate A into a hot saturated CN precursor aqueous solution, then immediately taking out, after the surface being dried, a uniform precursor film layer on the conductive substrate A was formed. This step can be repeated several times to get different layers of precursor film on the substrate A; (2) preparing the CN electrode: the dry precursor film obtained in step (1) was encapsulated in a glass tube filled with N.sub.2. Then the glass tube was inserted into a furnace with N.sub.2 atmosphere to calcinate. After calcination, the uniform CN film electrode was obtained. The method provided by the invention is simple and easy to implement, and convenient in used equipment, suitable for industrial application and popularization.