The present invention discloses photostable composite of indium gallium nitride and zinc oxide for solar water splitting, comprising Indium content in the range of 1-40 wt %, Ga content in the range of 1 to 15 wt %, nitrogen content in the range of 0.1 to 5 wt %, and the remaining is ZnO. The combustion synthesis comprises the steps of: (a) dissolving 45 to 55 wt % urea, 75 to 80 wt % Zinc nitrate, 3 to 5 wt % Gallium nitrate, and 15 to 20 wt % Indium nitrate in water with stirring until a homogenous solution is formed; and (b) heating the homogenous solution of step (a) at a temperature in the range of 450-550 [deg.]C. for period in the range of 2 to 20 min to obtain the photostable composite.

High-purity gallium nitride particles having a low oxygen content suitable for a raw material or a sintered body is provided. Gallium nitride particles characterized in that the oxygen content is 0.5 at % or less and the total impurity amount of elements, Si, Ge, Sn, Pb, Be, Mg, Ca, Sr, Ba, Zn and Cd, is less than 10 wtppm are used.

The present invention relates to a method of manufacturing gallium nitride quantum dots, and more particularly, to a method of manufacturing gallium nitride quantum dots doped with metal ions, which uses a wet-based synthesis method capable of lowering the fluorescence energy of pure gallium nitride by introducing metal ions into pure gallium nitride.

A method for manufacturing Group-III nitride semiconductor nanoparticles includes synthesizing Group-III nitride semiconductor nanoparticles having a particle size of 16 nm or less by reacting materials containing one or more Group-III elements M in a liquid phase, wherein a coordination solvent is used, and trimethyl M is used as at least one Group-III element material among the materials containing one or more Group-III elements M.

A sputtering target for a gallium nitride thin film, which has a low oxygen content, a high density and a low resistivity. A gallium nitride powder having powder physical properties of a low oxygen content and a high bulk density is used and hot pressing is conducted at high temperature in high vacuum to prepare a gallium nitride sintered body having a low oxygen content, a high density and a low resistivity.

There is provided a nitride crystal substrate constituted by group-III nitride crystal, containing n-type impurities, with an absorption coefficient α being approximately expressed by equation (1) by a least squares method in a wavelength range of at least 1 μm or more and 3.3 μm or less.
α=N.sub.eKλ.sup.a  (1)
(where 1.5×10.sup.−19≤K≤6.0×10.sup.−19, a=3), here, a wavelength is λ (μm), an absorption coefficient of the nitride crystal substrate at 27° C. is α (cm.sup.−1), a carrier concentration in the nitride crystal substrate is N.sub.e (cm.sup.−3), and K and a are constants, wherein an error of an actually measured absorption coefficient with respect to the absorption coefficient α obtained from equation (1) at a wavelength of 2 μm is within ±0.1α, and in a reflection spectrum measured by irradiating the nitride crystal substrate with infrared light, there is no peak with a peak top within a wavenumber range of 1,200 cm.sup.−1 or more and 1,500 cm.sup.−1 or less.

A layer of a crystal of a nitride of a group 13 element selected from gallium nitride, aluminum nitride, indium nitride and the mixed crystals thereof includes an upper surface and a bottom surface. The upper surface includes a linear high-luminance light-emitting part and a low-luminance light-emitting region adjacent to the high-luminance light-emitting part, and the high-luminance light-emitting part has a portion extending along an m-plane of the crystal of the nitride of the group 13 element, when the upper surface is observed by cathode luminescence. The upper surface has an arithmetic average roughness Ra of 0.05 nm or more and 1.0 nm or less.

A crystal of a group 13 nitride has an upper surface and lower surface and is composed of a crystal of a group 13 nitride selected from gallium nitride, aluminum nitride, indium nitride or the mixed crystals thereof. When the upper surface of the layer of the crystal of the group 13 nitride is observed by cathode luminescence, the upper surface includes a linear high-luminance light-emitting part and a low-luminance light-emitting region adjacent to the high-luminance light-emitting part. A half value width of reflection at the (0002) plane of a X-ray rocking curve on the upper surface is 3000 seconds or less and 20 seconds or more.

Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously.