An apparatus and method for forming a thin film on a substrate by RPCVD which provides for very low levels of carbon and oxygen impurities and includes the steps of introducing a Group VA plasma into a first deposition zone of a growth chamber, introducing a Group IIIA reagent into a second deposition zone of the growth chamber which is separate from the first deposition zone and introducing an amount of an additional reagent selected from the group consisting of ammonia, hydrazine, di-methyl hydrazine and a hydrogen plasma through an additional reagent inlet into the second deposition zone such that the additional reagent and the Group IIIA reagent mix prior to deposition.

Provided are gallium nitride particles that have a low oxygen content and a high moldability and allow a gallium nitride sputtering target having a high density and a high strength to be produced. By causing a mixed powder of gallium oxide and gallium nitride to react at a temperature of 1000-1100° C. such that an ammonia reaction amount per hour is 1 or more times (by mole) an amount of gallium charged, gallium nitride particles are obtained of which an oxygen content is 1 atm % or less, an average particle size of primary particles is 5 μm or more, and a particle size of a range of 10 area % from smallest particles of a particle size distribution (10% particle size) is 3 μm or less.

A layer of a crystal of a group 13 nitride selected from gallium nitride, aluminum nitride, indium nitride and the mixed crystals thereof has an upper surface and a bottom surface. The upper surface of the crystal layer of the group 13 nitride includes a linear high-luminance light-emitting part and a low-luminance light-emitting region adjacent to the high-luminance light-emitting part, observed by cathode luminescence. The high-luminance light-emitting part includes a portion extending along an m-plane of the crystal of the group 13 nitride.

A semiconductor nanocrystal can be made by an in situ redox reaction between an M donor and an E donor.

A semiconductor nanocrystal can be made by an in situ redox reaction between an M donor and an E donor.

A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously.

A gallium-containing nitride crystals are disclosed, comprising: a top surface having a crystallographic orientation within about 5 degrees of a plane selected from a (0001) +c-plane and a (000-1) c-plane; a substantially wurtzite structure; n-type electronic properties; an impurity concentration of hydrogen greater than about 510.sup.17 cm.sup.3, an impurity concentration of oxygen between about 210.sup.17 cm.sup.3 and about 110.sup.20 cm.sup.3, an [H]/[O] ratio of at least 0.3; an impurity concentration of at least one of Li, Na, K, Rb, Cs, Ca, F, and Cl greater than about 110.sup.16 cm.sup.3, a compensation ratio between about 1.0 and about 4.0; an absorbance per unit thickness of at least 0.01 cm.sup.1 at wavenumbers of approximately 3175 cm.sup.1, 3164 cm.sup.1, and 3150 cm.sup.1, and wherein, at wavenumbers between about 3200 cm.sup.1 and about 3400 cm.sup.1 and between about 3075 cm.sup.1 and about 3125 cm.sup.1, said gallium-containing nitride crystal is essentially free of infrared absorption peaks having an absorbance per unit thickness greater than 10% of the absorbance per unit thickness at 3175 cm.

It is provided a layer of a crystal of a nitride of a group 13 element selected from gallium nitride, aluminum nitride, indium nitride and the mixed crystals thereof, and the layer includes an upper surface and a bottom surface. The upper surface includes a linear high-luminance light-emitting part and a low-luminance light-emitting region adjacent to the high-luminance light-emitting part, and the high-luminance light-emitting part has a portion extending along an m-plane of the crystal of the nitride of the group 13 element, in the case that the upper surface is observed by cathode luminescence. The upper surface has an arithmetic average roughness Ra of 0.05 nm or more and 1.0 nm or less.

It is provided a layer of a crystal of a group 13 nitride having an upper surface and lower surface and composed of a crystal of the group 13 nitride selected from gallium nitride, aluminum nitride, indium nitride or the mixed crystals thereof. In the case that the upper surface of the layer of the crystal of the group 13 nitride is observed by cathode luminescence, the upper surface includes a linear high-luminance light-emitting part and a low-luminance light-emitting region adjacent to the high-luminance light-emitting part. A half value width of reflection at (0002) plane of an X-ray rocking curve on the upper surface is 3000 seconds or less and 20 seconds or more.

A layer of a crystal of a group 13 nitride selected from gallium nitride, aluminum nitride, indium nitride and the mixed crystals thereof has an upper surface and a bottom surface. The upper surface of a crystal layer of the group 13 nitride includes a linear high-luminance light-emitting part and a low-luminance light-emitting region adjacent to the high-luminance light-emitting part, observed by cathode luminescence. The high-luminance light-emitting part includes a portion extending along an m-plane of the crystal of the group 13 nitride.