Hydridosilapyrroles and hydridosilaazapyrrole are a new class of heterocyclic compounds having a silicon bound to carbon and nitrogen atoms within the ring system and one or two hydrogen atoms on the silicon atom. The compounds have formula (I): ##STR00001##
in which R is a substituted or unsubstituted organic group and R′ is an alkyl group. These compounds react with a variety of organic and inorganic hydroxyl groups by a ring-opening reaction and may be used to produce silicon nitride or silicon carbonitride films.

Disclosed herein are compositions, devices and methods for inactivating viruses, bacteria, and fungi. The compositions, methods, and devices may include coatings or slurries such as silicon nitride powder coatings or slurries for the inactivation of viruses, bacteria, and/or fungi.

Disclosed herein are compositions, devices and methods for inactivating viruses, bacteria, and fungi. The compositions, methods, and devices may include coatings or slurries such as silicon nitride powder coatings or slurries for the inactivation of viruses, bacteria, and/or fungi.

A silicon nitride substrate including a first surface, and a second surface disposed opposite the first surface. One of the first surface or the second surface is a measurement surface. On the measurement surface, a value of an average full-width-at-half-maximum (FWHM) C.sub.ave is broader than 0 cm.sup.−1 and narrower than 5.32 cm.sup.−1 as measured by using a following measurement method. The measurement method of the average full-width-at-half-maximum (FWHM) C.sub.ave: one central point and four edge portions on the measurement surface are determined as measurement points; a Raman spectrum is measured at each of the measurement points; a full-width-at-half-maximum (FWHM) C of a spectral peak having the maximum strength within a range from 850 cm.sup.−1 or greater to 875 cm.sup.−1 or less is calculated in each Raman spectrum; and an average value of thus calculated full-width-at-half-maximum (FWHM)s C is the average full-width-at-half-maximum (FWHM) C.sub.ave.

A Si-containing film forming composition comprising a catalyst and/or a polysilane and a N—H free, C-free, and Si-rich perhydropolysilazane having a molecular weight ranging from approximately 332 dalton to approximately 100,000 dalton and comprising N—H free repeating units having the formula [—N(SiH3)x(SiH2-)y], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 with x+y=3. Also disclosed are synthesis methods and applications for using the same.

A Si-containing film forming composition comprising a catalyst and/or a polysilane and a N—H free, C-free, and Si-rich perhydropolysilazane having a molecular weight ranging from approximately 332 dalton to approximately 100,000 dalton and comprising N—H free repeating units having the formula [—N(SiH3)x(SiH2-)y], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 with x+y=3. Also disclosed are synthesis methods and applications for using the same.

Provided are a composition for depositing a silicon-containing thin film containing a bis(aminosilyl)alkylamine compound and a method for manufacturing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing the bis(aminosilyl)alkylamine compound capable of being usefully used as a precursor of the silicon-containing thin film, and a method for manufacturing a silicon-containing thin film using the same.

Provided are a composition for depositing a silicon-containing thin film containing a bis(aminosilyl)alkylamine compound and a method for manufacturing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing the bis(aminosilyl)alkylamine compound capable of being usefully used as a precursor of the silicon-containing thin film, and a method for manufacturing a silicon-containing thin film using the same.

An insulating filler composed of a mixed powder in which a hydrophobic fumed oxide powder having an average primary particle size D.sub.1, which is smaller than an average primary particle size D.sub.2, is adhered to the surface of a magnesium oxide powder and/or a nitride-based inorganic powder having the average primary particle size D.sub.2, wherein: the ratio D.sub.1/D.sub.2 of the average primary particle size D.sub.1 to the average primary particle size D.sub.2 is 6×10.sup.−5 to 3×10.sup.−3; the volume resistivity of the mixed powder is 1×10.sup.11 Ω.Math.m or more; and the content ratio of the hydrophobic fumed oxide powder in the mixed powder is 5-30 mass %. Also provided is an insulating material in which the above-mentioned insulating filler is contained in a resin molded body.

Disclosed herein are chlorodisazanes; silicon-heteroatom compounds synthesized therefrom; devices containing the silicon-heteroatom compounds; methods of making the chlorodisilazanes, the silicon-heteroatom compounds, and the devices; and uses of the chlorodisilazanes, silicon-heteroatom compounds, and devices.