C01B21/0821

METHOD FOR PREPARING PHOTOMASK BLANK, PHOTOMASK BLANK, METHOD FOR PREPARING PHOTOMASK, PHOTOMASK, AND METALLIC CHROMIUM TARGET

A method for preparing a photomask blank comprising a transparent substrate and a chromium-containing film contiguous thereto involves the step of depositing the chromium-containing film by sputtering a metallic chromium target having an Ag content of up to 1 ppm. When a photomask prepared from the photomask blank is repeatedly used in patternwise exposure to ArF excimer laser radiation, the number of defects formed on the photomask is minimized.

ANATASE-TYPE NIOBIUM OXYNITRIDE, METHOD FOR PRODUCING SAME, AND SEMICONDUCTOR STRUCTURE

The present disclosure provides an anatase-type niobium oxynitride having an anatase-type crystal structure and represented by the chemical formula NbON. The present disclosure also provides a semiconductor structure (100) including: a substrate (110) having at least one principal surface composed of a perovskite-type compound having a perovskite-type crystal structure; and a niobium oxynitride (for example, an anatase-type niobium oxynitride film (120)) grown on the one principal surface of the substrate (110), the niobium oxynitride having an anatase-type crystal structure and being represented by the chemical formula NbON.

RUTILE-TYPE NIOBIUM OXYNITRIDE, METHOD FOR PRODUCING SAME, AND SEMICONDUCTOR STRUCTURE

The present disclosure provides a rutile-type niobium oxynitride having a rutile-type crystal structure and represented by the chemical formula NbON. The present disclosure also provides a semiconductor structure (100) including: a substrate (110) having at least one principal surface composed of a rutile-type compound having a rutile-type crystal structure; and a niobium oxynitride (for example, a rutile-type niobium oxynitride film (120)) grown on the one principal surface of the substrate (110), the niobium oxynitride having a rutile-type crystal structure and being represented by the chemical formula NbON.

Sintered material, tool including sintered material, and sintered material production method

To provide a sintered material having excellent oxidation resistance, as well as excellent abrasion resistance and chipping resistance. A sintered material containing a first compound formed of Ti, Al, Si, O, and N is provided.

FLUORESCENT MATERIAL AND LIGHT EMITTING DEVICE

Provided are a fluorescent material including a high light emission intensity and a light emitting device using the same. The present fluorescent material includes at least an A element, a M element, a D element, a E element, and an X element, wherein the A element is at least one element selected from the group consisting of Sr, Mg, Ca, and Ba; the M element is at least one element selected from the group consisting of Eu, Mn, Ce, Pr, Nd, Sm, Tb, Dy, and Yb; the D element is at least one element selected from the group consisting of Si, Ge, Sn, Ti, Zr, and Hf, the E element is at least one element selected from the group consisting of Al, B, Ga, In, Sc, Y, and La; the X element is at least one element selected from the group consisting of O, N, and F; and a molar ratio of the M element to the sum of the A element and the M element [M/(A+M)] is 0.06 or less.

POLYOXOMETALATE AND METHOD FOR PRODUCING POLYOXOMETALATE

Provided is a novel polyoxometalate and a method for producing the polyoxometalate. The polyoxometalate is represented by the compositional formula: M.sub.xO.sub.y in which M is tungsten, molybdenum or vanadium; 4x1000; and 2.5y/x7.

Macroporous titanium compound monolith and method for producing same

Provided are a macroporous titanium compound monolith and a production method thereof, the macroporous titanium compound monolith having a framework that is composed of a titanium compound other than titanium dioxide, having controlled macropores, and having electron conductivity, the titanium compound being oxygen-deficient titanium oxide, titanium oxynitride, or titanium nitride. Provided is a method including: placing a macroporous titanium dioxide monolith and a metal having titanium-reducing ability in a container, the macroporous titanium dioxide monolith having a co-continuous structure of a macropore and a framework that is composed of titanium dioxide; creating a vacuum atmosphere or an inert gas atmosphere within the container; and heating the monolith and the metal to cause gas-phase reduction that removes oxygen atom from the titanium dioxide composing the monolith by the metal acting as an oxygen getter, thereby obtaining a macroporous oxygen-deficient titanium oxide monolith having a co-continuous structure of the macropore and a framework that is composed of oxygen-deficient titanium oxide, the macroporous oxygen-deficient titanium oxide monolith having electron conductivity derived from the oxygen-deficient titanium oxide.

Phosphor, Method of Producing the Same, and Light Emitting Apparatus

There are provided a phosphor which is a divalent europium-activated oxynitride phosphor substantially represented by General formula (A): Eu.sub.aSi.sub.bAl.sub.cO.sub.dN.sub.e, a divalent europium-activated oxynitride phosphor substantially represented by General formula (B): MI.sub.fEu.sub.gSi.sub.hAl.sub.kO.sub.mN.sub.n or a divalent europium-activated nitride phosphor substantially represented by General formula (C): (MII.sub.1pEu.sub.p)MIIISiN.sub.3, having a reflectance of light emission in a longer wavelength region of visible light than a peak wavelength of 95% or larger, and a method of producing such phosphor; a nitride phosphor and an oxynitride phosphor which emit light efficiently and stably by the light having a wavelength ranging from 430 to 480 nm from a semiconductor light emitting device by means of a light emitting apparatus using such phosphor, and a producing method of such phosphor; and a light emitting apparatus having stable characteristics and realizing high efficiency.

Phosphor, method of producing the same, and light emitting apparatus

There are provided a phosphor which is a divalent europium-activated oxynitride phosphor substantially represented by General formula (A): Eu.sub.aSi.sub.bAl.sub.cO.sub.dN.sub.e, a divalent europium-activated oxynitride phosphor substantially represented by General formula (B): MI.sub.fEu.sub.gSi.sub.hAl.sub.kO.sub.mN.sub.n or a divalent europium-activated nitride phosphor substantially represented by General formula (C): (MII.sub.1-pEu.sub.p)MIIISiN.sub.3, having a reflectance of light emission in a longer wavelength region of visible light than a peak wavelength of 95% or larger, and a method of producing such phosphor; a nitride phosphor and an oxynitride phosphor which emit light efficiently and stably by the light having a wavelength ranging from 430 to 480 nm from a semiconductor light emitting device by means of a light emitting apparatus using such phosphor, and a producing method of such phosphor; and a light emitting apparatus having stable characteristics and realizing high efficiency.

Amorphous nitrogen-rich solid state lithium electrolyte

A lithium ion conductor includes a compound of Formula 1:
Li.sub.7a*(b4)*xM.sup.a.sub.La.sub.3Zr.sub.2M.sup.b.sub.O.sub.12xX.sub.xN.sub.Formula 1 wherein in Formula 1, M.sup.a is a cationic element having a valence of a, M.sup.b is a cationic element having a valence of b, and X is an anion having a valence of 1, wherein, when M.sup.a comprises H, 05, otherwise 00.75, and wherein 01.5, 0x1.5, (a*+(b4)+x)>0, and 0<6.