Phosphors include a CaAlSiN.sub.3 family crystal phase, wherein the CaAlSiN.sub.3 family crystal phase comprises at least one element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb.

The method for producing a perovskite metal oxynitride of the present invention, comprises: a hydrogenation step (A) of forming a perovskite oxyhydride in which an oxide ion (O2) and a hydride ion (H) coexist, by reducing a perovskite oxide through a reductive oxygen elimination reaction using a metal hydride; and a nitriding step (B) of forming a perovskite oxynitride containing a nitride ion (N3) by heat-treating the perovskite oxyhydride in the presence of a nitrogen source substance at a temperature of 300 C. or higher and 600 C. or lower and exchanging the hydride ion (H) for a nitride ion (N3).

There are provided a phosphor which is a divalent europium-activated oxynitride phosphor substantially represented by General formula (A): Eu.sub.aSi.sub.bAl.sub.cO.sub.dN.sub.e, a divalent europium-activated oxynitride phosphor substantially represented by General formula (B): MI.sub.fEu.sub.gSi.sub.hAl.sub.kO.sub.mN.sub.n or a divalent europium-activated nitride phosphor substantially represented by General formula (C): (MII.sub.1-pEu.sub.p)MIIISiN.sub.3, having a reflectance of light emission in a longer wavelength region of visible light than a peak wavelength of 95% or larger, and a method of producing such phosphor; a nitride phosphor and an oxynitride phosphor which emit light efficiently and stably by the light having a wavelength ranging from 430 to 480 nm from a semiconductor light emitting device by means of a light emitting apparatus using such phosphor, and a producing method of such phosphor; and a light emitting apparatus having stable characteristics and realizing high efficiency.

The present invention relates to compounds of formula I,

M.sup.IM.sup.II.sub.3 M.sup.III.sub.3M.sup.IV.sub.3N.sub.2O.sub.12:EuI

wherein, M.sup.I, M.sup.II, M.sup.III, and M.sup.IV have one of the meanings as given in claim 1, to a process of their preparation, the use of these compounds as conversion phosphors or in an emission-converting material, the use of these phosphors in electronic and electro optical devices, such as light emitting diodes (LEDs) and solar cells, and especially, to illumination units comprising at least one of these phosphors.

There are provided a phosphor which is a divalent europium-activated oxynitride phosphor substantially represented by General formula (A): Eu.sub.aSi.sub.bAl.sub.cO.sub.dN.sub.e, a divalent europium-activated oxynitride phosphor substantially represented by General formula (B): MI.sub.fEu.sub.gSi.sub.hAl.sub.kO.sub.mN.sub.n or a divalent europium-activated nitride phosphor substantially represented by General formula (C): (MII.sub.1-pEu.sub.p)MIIISiN.sub.3, having a reflectance of light emission in a longer wavelength region of visible light than a peak wavelength of 95% or larger, and a method of producing such phosphor; a nitride phosphor and an oxynitride phosphor which emit light efficiently and stably by the light having a wavelength ranging from 430 to 480 nm from a semiconductor light emitting device by means of a light emitting apparatus using such phosphor, and a producing method of such phosphor; and a light emitting apparatus having stable characteristics and realizing high efficiency.

An alkali metal amide is dissolved in a cyclic alkylene urea represented by the formula (1) (wherein each of R.sub.1 and R.sub.2 represents a C1 to C3 alkyl group, and R.sub.3 represents a C1 to C4 alkylene group). ##STR00001##

The method for producing a perovskite metal oxynitride of the present invention, comprises: a hydrogenation step (A) of forming a perovskite oxyhydride in which an oxide ion (O2) and a hydride ion (H) coexist, by reducing a perovskite oxide through a reductive oxygen elimination reaction using a metal hydride; and a nitriding step (B) of forming a perovskite oxynitride containing a nitride ion (N3) by heat-treating the perovskite oxyhydride in the presence of a nitrogen source substance at a temperature of 300 C. or higher and 600 C. or lower and exchanging the hydride ion (H) for a nitride ion (N3).

The purpose of the present invention is to provide an oxide semiconductor thin film, which has relatively high carrier mobility and is suitable as a channel layer material for a TFT, from an oxynitride crystalline thin film. According to the present invention, a crystalline oxynitride semiconductor thin film is obtained by annealing an amorphous oxynitride semiconductor thin film containing In, O, and N or an amorphous oxynitride semiconductor thin film containing In, O, N, and an additional element M, where M is one or more elements selected from among Zn, Ga, Ti, Si, Ge, Sn, W, Mg, Al, Y and rare earth elements, at a heating temperature of 200 C. or more for a heating time of 1 minute to 120 minutes.

A lithium ion conductor includes a compound of Formula 1:

Li.sub.7a*(b4)*xM.sup.a.sub.La.sub.3Zr.sub.2M.sup.b.sub.O.sub.12xX.sub.xN.sub.Formula 1

wherein in Formula 1, M.sup.a is a cationic element having a valence of a, M.sup.b is a cationic element having a valence of b, and X is an anion having a valence of 1,
wherein, when M.sup.a comprises H, 05, otherwise 00.75, and
wherein 01.5, 0x1.5, (a*+(b4)+x)>0, and 0<6.

A component for a lithium battery including a first layer including a lithium garnet having a porosity of 0 percent to less than 25 percent, based on a total volume of the first layer; and a second layer on the first layer and having a porosity of 25 percent to 80 percent, based on a total volume of the second layer, wherein the second layer is on the first layer and the second layer has a composition that is different from a composition of the first layer.