Methods for producing halosilazane comprise halogenating a hydrosilazane with a halogenating agent to produce the halosilazane, the halosilazane having a formula
(SiH.sub.a(NR.sub.2).sub.bX.sub.c).sub.(n+2)N.sub.n(SiH.sub.(2−d)X.sub.d).sub.(n−1),
wherein each a, b, c is independently 0 to 3; a+b+c=3; d is 0 to 2 and n≥1; wherein X is selected from a halogen atom selected from F, Cl, Br or I; each R is selected from H, a C.sub.1-C.sub.6 linear or branched, saturated or unsaturated hydrocarbyl group, or a silyl group [SiR′.sub.3]; further wherein each R′ of the [SiR′.sub.3] is independently selected from H, a halogen atom selected from F, Cl, Br or I, a C.sub.1-C.sub.4 saturated or unsaturated hydrocarbyl group, a C.sub.1-C.sub.4 saturated or unsaturated alkoxy group, or an amino group [—NR.sup.1R.sup.2] with each R.sup.1 and R.sup.2 being further selected from H or a C.sub.1-C.sub.6 linear or branched, saturated or unsaturated hydrocarbyl group, provided that when c=0, d≠0; or d=0, c≠0.

A composition, comprising: trisilylamine and less than 5 ppmw of halogen. A method of making a silylamine comprising combining ammonia and a compound comprising aminosilane functionality, where the compound comprising aminosilane functionality is according to formula (I) R.sup.1 N(R.sup.2)a(SiH.sub.3).sub.2−a (I), where R.sup.1 is an organic polymer, a C-.sub.1-20 hydrocarbyl group or —SiR.sup.3.sub.3.sup.1, where R.sup.3 is C.sub.1-6 hydrocarbyl, R.sup.2 is a C-.sub.1-20 hydrocarbyl group, H, or —SiR.sup.3.sub.3.sup.1, where R.sup.3 is as defined above, subscript a is 0 or 1, provided that R.sup.1 and R.sup.2 may be the same or different except if R.sup.1 is phenyl, R.sup.2 is not phenyl, under sufficient conditions to cause a reaction to form a silylamine and a byproduct.

A composition, comprising: trisilylamine and less than 5 ppmw of halogen. A method of making a silylamine comprising combining ammonia and a compound comprising aminosilane functionality, where the compound comprising aminosilane functionality is according to formula (I) R.sup.1 N(R.sup.2)a(SiH.sub.3).sub.2−a (I), where R.sup.1 is an organic polymer, a C-.sub.1-20 hydrocarbyl group or —SiR.sup.3.sub.3.sup.1, where R.sup.3 is C.sub.1-6 hydrocarbyl, R.sup.2 is a C-.sub.1-20 hydrocarbyl group, H, or —SiR.sup.3.sub.3.sup.1, where R.sup.3 is as defined above, subscript a is 0 or 1, provided that R.sup.1 and R.sup.2 may be the same or different except if R.sup.1 is phenyl, R.sup.2 is not phenyl, under sufficient conditions to cause a reaction to form a silylamine and a byproduct.

Methods are disclosed for forming a Silicon Metal Oxide film using a mono-substituted TSA precursor. The precursors have the formula: (SiH3)2N—SiH2-X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group.

Methods are disclosed for forming a Silicon Metal Oxide film using a mono-substituted TSA precursor. The precursors have the formula: (SiH3)2N—SiH2-X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group.

A method for making tris(disilanyl)amine. The method comprises steps of: (a) contacting a disilanyl(alkyl)amine with ammonia to make bis(disilanyl)amine; and (b) allowing bis(disilanyl)amine to produce tris(disilanyl)amine and ammonia.

A method for making tris(disilanyl)amine. The method comprises steps of: (a) contacting a disilanyl(alkyl)amine with ammonia to make bis(disilanyl)amine; and (b) allowing bis(disilanyl)amine to produce tris(disilanyl)amine and ammonia.

Methods for halogenation of a hydrosilazane include contacting the hydrosilazane with a halogenating agent in a liquid phase to produce the halosilazane having a formula
(SiH.sub.a(NR.sub.2).sub.bX.sub.c).sub.(n+2)N.sub.n(SiH.sub.(2−d)X.sub.d).sub.(n−1),
wherein each a, b, c is independently 0 to 3; a+b+c=3; d is 0 to 2 and n≥1; wherein X is selected from a halogen atom selected from F, Cl, Br or I; each R is selected from H, a C.sub.1-C.sub.6 linear or branched, saturated or unsaturated hydrocarbyl group, or a silyl group [SiR′.sub.3]; further wherein each R′ of the [SiR′.sub.3] is independently selected from H, a halogen atom selected from F, Cl, Br or I, a C.sub.1-C.sub.4 saturated or unsaturated hydrocarbyl group, a C.sub.1-C.sub.4 saturated or unsaturated alkoxy group, or an amino group [—NR.sup.1R.sup.2] with each R.sup.1 and R.sup.2 being further selected from H or a C.sub.1-C.sub.6 linear or branched, saturated or unsaturated hydrocarbyl group.

Methods for halogenation of a hydrosilazane include contacting the hydrosilazane with a halogenating agent in a liquid phase to produce the halosilazane having a formula
(SiH.sub.a(NR.sub.2).sub.bX.sub.c).sub.(n+2)N.sub.n(SiH.sub.(2−d)X.sub.d).sub.(n−1),
wherein each a, b, c is independently 0 to 3; a+b+c=3; d is 0 to 2 and n≥1; wherein X is selected from a halogen atom selected from F, Cl, Br or I; each R is selected from H, a C.sub.1-C.sub.6 linear or branched, saturated or unsaturated hydrocarbyl group, or a silyl group [SiR′.sub.3]; further wherein each R′ of the [SiR′.sub.3] is independently selected from H, a halogen atom selected from F, Cl, Br or I, a C.sub.1-C.sub.4 saturated or unsaturated hydrocarbyl group, a C.sub.1-C.sub.4 saturated or unsaturated alkoxy group, or an amino group [—NR.sup.1R.sup.2] with each R.sup.1 and R.sup.2 being further selected from H or a C.sub.1-C.sub.6 linear or branched, saturated or unsaturated hydrocarbyl group.

Described herein is an apparatus comprising a plurality of silicon-containing layers wherein the silicon-containing layers are selected from a silicon oxide and a silicon nitride layer or film. Also described herein are methods for forming the apparatus to be used, for example, as 3D vertical NAND flash memory stacks. In one particular aspect or the apparatus, the silicon oxide layer comprises slightly compressive stress and good thermal stability. In this or other aspects of the apparatus, the silicon nitride layer comprises slightly tensile stress and less than 300 MPa stress change after up to about 800° C. thermal treatment. In this or other aspects of the apparatus, the silicon nitride layer etches much faster than the silicon oxide layer in hot H.sub.3PO.sub.4, showing good etch selectivity.